Lift-off of epitaxial layers from silicon carbide or compound semiconductor substrates
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/306
H01L-029/20
H01L-029/16
H01L-021/762
H01L-021/78
H01L-021/3213
H01L-021/683
출원번호
US-0331440
(2014-07-15)
등록번호
US-9876081
(2018-01-23)
발명자
/ 주소
Meyer, David J.
Downey, Brian P.
출원인 / 주소
The United States of America, as represented by the Secretary of the Navy
대리인 / 주소
US Naval Research Laboratory
인용정보
피인용 횟수 :
0인용 특허 :
6
초록▼
A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separatin
A method to remove epitaxial semiconductor layers from a substrate by growing an epitaxial sacrificial layer on the substrate where the sacrificial layer is a transition metal nitride (TMN) or a TMN ternary compound, growing one or more epitaxial device layers on the sacrificial layer, and separating the device layers from the substrate by etching the sacrificial layer to completely remove the sacrificial layer without damaging or consuming the substrate or any device layer. Also disclosed are the related semiconductor materials made by this method.
대표청구항▼
1. A method to remove epitaxial device layers from a substrate, comprising: growing an epitaxial sacrificial layer on the substrate, wherein the epitaxial sacrificial layer comprises a transition metal nitride (TMN) selected from the group consisting of Ta2N, Nb2N, TaNx, NbNx, WNx, and MoNx, where x
1. A method to remove epitaxial device layers from a substrate, comprising: growing an epitaxial sacrificial layer on the substrate, wherein the epitaxial sacrificial layer comprises a transition metal nitride (TMN) selected from the group consisting of Ta2N, Nb2N, TaNx, NbNx, WNx, and MoNx, where x>0, or a TMN ternary compound comprising a transition metal selected from the group consisting of Ta, Nb, W, and Mo; growing one or more epitaxial device layers directly on the epitaxial sacrificial layer, wherein the epitaxial sacrificial layer is grown immediately prior to the growing of the one or more epitaxial device layers; and separating the epitaxial device layers from the substrate by etching the epitaxial sacrificial layer to completely remove the epitaxial sacrificial layer without damaging or consuming the substrate or any epitaxial device layer. 2. The method of claim 1, wherein the substrate comprises SiC. 3. The method of claim 2, wherein the substrate has a hexagonal crystal structure, consisting of the 4H or 6H polytype. 4. The method of claim 1, wherein the substrate comprises AlN, GaN, Si (111), or sapphire. 5. The method of claim 4, wherein the crystal structure of the substrate has 3-fold symmetry. 6. The method of claim 1, wherein the etching is performed using XeF2 gas. 7. The method of claim 1, wherein the etching is performed using a wet-chemical etchant. 8. The method of claim 7, wherein the wet-chemical etchant comprises hydrofluoric acid, nitric acid, or hydrochloric acid. 9. The method of claim 1, wherein the etching is continuous. 10. The method of claim 1, wherein the etching is pulsed. 11. The method of claim 1, wherein the one or more epitaxial layers comprise a Group III nitride or SiC. 12. The method of claim 1, additionally comprising bonding a carrier substrate to the epitaxial layers using a bonding layer. 13. A device made by the method comprising: growing an epitaxial sacrificial layer on a substrate, wherein the epitaxial sacrificial layer comprises a transition metal nitride (TMN) selected from the group consisting of Ta2N, Nb2N, TaNx, NbNx, WNx, and MoNx, where x>0, or a TMN ternary compound comprising a transition metal selected from the group consisting of Ta, Nb, W, and Mo; growing one or more epitaxial device layers directly on the epitaxial sacrificial layer, wherein the epitaxial sacrificial layer is either grown immediately prior to the growing of the one or more epitaxial device layers or cleaned prior to the growing of the one or more epitaxial device layers; and separating the epitaxial device layers from the substrate by etching the epitaxial sacrificial layer to completely remove the epitaxial sacrificial layer without damaging or consuming the substrate or any epitaxial device layer. 14. The device of claim 13, wherein the substrate comprises SiC. 15. The device of claim 14, substrate has a hexagonal crystal structure, consisting of the 4H or 6H polytype. 16. The device of claim 13, wherein the substrate comprises AlN, GaN, Si (111), or sapphire. 17. The device of claim 16, wherein the crystal structure of the substrate has 3-fold symmetry. 18. The device of claim 13, wherein the etching is performed using XeF2 gas. 19. The device of claim 13, wherein the etching is performed using a wet-chemical etchant. 20. The device of claim 19, wherein the wet-chemical etchant comprises hydrofluoric acid, nitric acid, or hydrochloric acid. 21. The device of claim 13, wherein the etching is continuous. 22. The device of claim 13, wherein the etching is pulsed. 23. The device of claim 13, wherein the one or more epitaxial device layers comprise a Group III nitride or SiC. 24. The device of claim 13, additionally comprising bonding a carrier substrate to the epitaxial device layers using a bonding layer. 25. A method to remove epitaxial device layers from a substrate, comprising: growing an epitaxial sacrificial layer on the substrate, wherein the epitaxial sacrificial layer comprises a transition metal nitride (TMN) selected from the group consisting of Ta2N, Nb2N, TaNx, NbNx, WNx, and MoNx, where x>0, or a TMN ternary compound comprising a transition metal selected from the group consisting of Ta, Nb, W, and Mo; growing one or more epitaxial device layers directly on the epitaxial sacrificial layer, wherein if the epitaxial sacrificial layer is not grown immediately prior to the growing of the one or more epitaxial device layers, the epitaxial sacrificial layer is cleaned prior to the growing of the one or more epitaxial device layers; and separating the epitaxial device layers from the substrate by etching the epitaxial sacrificial layer to completely remove the epitaxial sacrificial layer without damaging or consuming the substrate or any epitaxial device layer. 26. The method of claim 25, wherein the substrate comprises SiC. 27. The method of claim 26, wherein the substrate has a hexagonal crystal structure, consisting of the 4H or 6H polytype. 28. The method of claim 25, wherein the substrate comprises AlN, GaN, Si (111), or sapphire. 29. The method of claim 28, wherein the crystal structure of the substrate has 3-fold symmetry. 30. The method of claim 25, wherein the etching is performed using XeF2 gas. 31. The method of claim 25, wherein the etching is performed using a wet-chemical etchant. 32. The method of claim 31, wherein the wet-chemical etchant comprises hydrofluoric acid, nitric acid, or hydrochloric acid. 33. The method of claim 25, wherein the etching is continuous. 34. The method of claim 25, wherein the one or more epitaxial device layers comprise a Group III nitride or SiC. 35. The method of claim 25, additionally comprising bonding a carrier substrate to the epitaxial device layers using a bonding layer. 36. The method of claim 1, further comprising the step of reusing the substrate for subsequent epitaxial device layer growth. 37. The device of claim 13, wherein the substrate is reused for subsequent epitaxial device layer growth. 38. The method of claim 25, further comprising the step of reusing the substrate for subsequent epitaxial device layer growth.
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이 특허에 인용된 특허 (6)
Nakamura, Shuji; DenBaars, Steven, Lift-off process for GaN films formed on SiC substrates and devices fabricated using the method.
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