초록 ▼

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The proce

Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.

대표청구항 ▼

1. A colloidal material comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface and the inorganic capping agent comprises an anion selected from the group consisting of S2−, HS−, Se2−, HSe−, Te2−, HTe−,

1. A colloidal material comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface and the inorganic capping agent comprises an anion selected from the group consisting of S2−, HS−, Se2−, HSe−, Te2−, HTe−, TeS32−, OH−, NH2−, and a mixture thereof, and wherein the inorganic capping agent is distinct from the nanoparticle. 2. The colloidal material of claim 1, wherein the nanoparticle comprises AIN, AIP, AlAs, Ag, Au, Bi, Bi2S3, Bi2Se3, Bi2Te3, CdS, CdSe, CdTe, Co, Cu, Fe, FeO, Fe2O3, Fe3O4, FePt, GaN, GaP, GaAs, GaSb, GaSe, Ge, HgS, HgSe, HgTe, InN, InP, InSb, InAs, Ni, PbS, PbSe, PbTe, Pd, Pt, Ru, Rh, Si, Sn, ZnS, ZnSe, ZnTe, or a mixture thereof. 3. The colloidal material of claim 1, wherein a plurality of the nanoparticles are bridged via a cation selected from the group consisting of Pt2+, Zn2+, Cd2+, Mn2+, Mn3+, Eu2+, Fe2+, Fe3+, Co2+, Ge4+, Cu2+, Cu+, Pb2+, Bi3+, Sb3+, In3+, Ga3+, Au+, Au3+, Ag+, Sn2+, Sn4+, Hg2+, or a mixture thereof. 4. The colloidal material of claim 1 made by a method comprising admixing an inorganic capping agent in a first solvent and a nanoparticle in a second solvent together to form the colloidal material, wherein the second solvent is appreciably immiscible in the first solvent. 5. A method of making the colloidal material of claim 1, comprising (a) admixing the nanoparticle in a first solvent and the inorganic capping agent in a second solvent in the presence of a quaternary ammonium salt to form the colloidal material; and(b) isolating the colloidal material from the admixture, wherein the first solvent is nonpolar and the second solvent is polar. 6. A field effect transistor comprising: a source region and a drain region and a matrix extending between, and electrically coupled to, the source region and the drain region to provide current flow between the source region and the drain region, in response to activation of the field effect transistor by a gate coupled to the matrix and having a threshold gate voltage, wherein the matrix comprises a plurality of colloidal materials, each colloidal material comprising a nanoparticle and an inorganic capping agent comprising an anion selected from the group consisting of S2−, HS−, Se2−, HSe−, Te2−, HTe−, TeS32−, OH−, NH2−, and a mixture thereof, with a pair of colloidal materials bridged by a cation selected from the group consisting of Pt2+, Zn2+, Cd2+, Mn2+, Mn3+, Eu2+, Fe2+, Fe3+, Co2+, Ge4+, Cu2+, Cu+, Pb2+, Bi3+, Sb3+, In3+, Ga3+, Au+, Au3+, Ag+, Sn2+, Sn4+, Hg2+, or a mixture thereof. 7. A colloidal material comprising a nanoparticle and an inorganic capping agent, wherein the inorganic capping agent is bound to at least a portion of the nanoparticle surface and the inorganic capping agent comprises an anion selected from the group consisting of S2−, HS−, Se2−, HSe−, Te2−, HTe−, TeS32−, OH−, NH2−, and a mixture thereof, wherein the capping agent forms a single-layer non-crystalline array on the nanoparticle face. 8. The colloidal material of claim 7, wherein the nanoparticle comprises AIN, AIP, AlAs, Ag, Au, Bi, Bi2S3, Bi2Se3, Bi2Te3, CdS, CdSe, CdTe, Co, Cu, Fe, FeO, Fe2O3, Fe3O4, FePt, GaN, GaP, GaAs, GaSb, GaSe, Ge, HgS, HgSe, HgTe, InN, InP, InSb, InAs, Ni, PbS, PbSe, PbTe, Pd, Pt, Ru, Rh, Si, Sn, ZnS, ZnSe, ZnTe, or a mixture thereof. 9. The colloidal material of claim 7, wherein the inorganic capping agent further comprises a cation selected from the group consisting of Pt2+, Zn2+, Cd2+, Mn2+, Mn3+, Eu2+, Fe2+, Fe3+, Co2+, Ge4+, Cu2+, Cu+, Pb2+, Bi3+, Sb3+, In3+, Ga3+, Au+, Au3+, Ag+, Sn2+, Sn4+, Hg2+, or a mixture thereof. 10. The colloidal material of claim 7 made by a method comprising admixing an inorganic capping agent in a first solvent and a nanoparticle in a second solvent together to form the colloidal material, wherein the second solvent is appreciably immiscible in the first solvent. 11. A method of making the colloidal material of claim 7, comprising (a) admixing the nanoparticle in a first solvent and the inorganic capping agent in a second solvent in the presence of a quaternary ammonium salt to form the colloidal material; and(b) isolating the colloidal material from the admixture, wherein the first solvent is nonpolar and the second solvent is polar. 12. A field effect transistor comprising: a source region and a drain region and a matrix extending between, and electrically coupled to, the source region and the drain region to provide current flow between the source region and the drain region, in response to activation of the field effect transistor by a gate coupled to the matrix and having a threshold gate voltage, wherein the matrix comprises a plurality of colloidal materials according to claim 7, with a pair of colloidal materials bridged by a cation selected from the group consisting of Pt2+, Zn2+, Cd2+, Mn2+, Mn3+, Eu2+, Fe2+, Fe3+, Co2+, Ge4+, Cu2+, Cu+, Pb2+, Bi3+, Sb3+, In3+, Ga3+, Au+, Au3+, Ag+, Sn2+, Sn4+, Hg2+, or a mixture thereof.