최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0619474 (2015-02-11) |
등록번호 | US-9885117 (2018-02-06) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 17 인용 특허 : 754 |
A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is sta
A method for conditioning a semiconductor chamber component may include passivating the chamber component with an oxidizer. The method may also include performing a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized. The number of chamber operation cycles to stabilize the process may be less than 10% of the amount otherwise used with conventional techniques.
1. A method of conditioning a semiconductor chamber component, the method comprising: passivating the chamber component with an oxidizer, wherein the chamber component comprises an aluminum chamber component, and wherein the passivating comprises:exposing the chamber component to an acid solution fo
1. A method of conditioning a semiconductor chamber component, the method comprising: passivating the chamber component with an oxidizer, wherein the chamber component comprises an aluminum chamber component, and wherein the passivating comprises:exposing the chamber component to an acid solution for a first period of time; andsubsequently exposing the chamber component to a basic solution for a second period of time; andperforming a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized, wherein the number of chamber operation cycles to stabilize the process is less than 3,000, wherein the chamber process is an etch process, and wherein the chamber process is stabilized when it performs consistently to within +/−20% etch amount between operation cycles. 2. The method of claim 1, wherein the process is stabilized when it performs consistently to within +/−10% etch amount between operation cycles. 3. The method of claim 1, wherein the number of chamber operation cycles to stabilize the process is less than 100. 4. The method of claim 1, wherein the acid solution comprises an acid selected from the group consisting of nitric acid (HNO3), sulfuric acid (H2SO4), hydrochloric acid (HCl), and hydrofluoric acid (HF). 5. The method of claim 4, wherein the acid comprises nitric acid at a concentration greater than 25%. 6. The method of claim 1, wherein the basic solution comprises an aqueous solution of ammonia. 7. The method of claim 6, wherein the aqueous solution of ammonia is at a concentration greater than 10%. 8. The method of claim 1, wherein the passivation operation is performed for a time greater than about 5 minutes. 9. The method of claim 1, wherein the passivation operation is performed at a temperature of less than about 50° C. 10. The method of claim 1, wherein exposing the chamber component to an acid solution comprises dipping the chamber component in a first bath comprising the acid solution for a time period greater than about 10 minutes, and wherein subsequently exposing the chamber component to a basic solution comprises dipping the component in a second bath comprising the basic solution for a time period less than about 3 minutes. 11. The method of claim 1, further comprising coating at least a portion of the chamber component with a protective material subsequent to the passivation operation. 12. A method of conditioning an aluminum semiconductor chamber component, comprising: machining a plurality of apertures through the chamber component;dipping the chamber component in an oxidizer bath comprising nitric acid (HNO3) at a concentration greater than 25%, for a time period less than about 30 minutes, and at a temperature less than about 25° C.;subsequently dipping the chamber component in a bath of a basic solution; andperforming a number of chamber process operation cycles in a semiconductor processing chamber housing the chamber component until the process is stabilized, wherein the number of chamber operation cycles to stabilize the process is less than about 50, wherein the chamber process is an etch process, and wherein the chamber process is stabilized when it performs consistently to within +/−20% etch amount between operation cycles. 13. The method of claim 11, wherein the chamber component is at least partially coated with yttrium oxide. 14. The method of claim 13, wherein a yttrium oxide coating is applied to at least a portion of the chamber component subsequent passivating the chamber component.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.