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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0222715 (2016-07-28) |
| 등록번호 | US-9887082 (2018-02-06) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 6 인용 특허 : 704 |
There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the su
There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.
1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing the substrate in a reaction chamber and providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one mono
1. A method of filling one or more gaps created during manufacturing of a feature on a substrate by providing the substrate in a reaction chamber and providing a deposition method comprising: introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area of the surface of the one or more gaps;introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface of the one or more gaps, whereinthe first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and,introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area,wherein the third reactant comprises a high growth reactant providing a relatively high growth in combination with one of the first reactant and the second reactants. 2. The method of claim 1, wherein the method comprises removing excess reactant and byproduct after each step of introducing a first, second and/or third reactant. 3. The method according to claim 1, wherein the deposition method is repeated multiple times to fill the gap. 4. The method according to claim 1, wherein one of the first and the second reactants is introduced with a saturating dose and the other one of the first and second reactants is introduced with a subsaturating dose. 5. The method according to claim 4, wherein said one of the first and the second reactants is a reactant providing a relatively low growth rate in combination with the other one of the first and second reactants. 6. The method according to claim 4, wherein the saturating dose is sufficiently large for said one of the first and second reactants to reach the bottom of the gap. 7. The method according to claim 4, wherein said one of the first and the second reactants is introduced to cover the total surface of the one or more gaps. 8. The method according to claim 4, wherein said other one of the first and second reactants comprise a low growth reactant providing a relatively low growth in combination with the one of the first and second reactants. 9. The method according to claim 4, wherein the subsaturating dose is sufficiently low for said other one of the first and second reactants to not reach the bottom of the gap. 10. The method according to claim 4, wherein said other one of the first and the second reactants is introduced to cover said corresponding one of the first and second areas which is smaller than the total surface of the one or more gaps. 11. The method according to claim 10, wherein the corresponding one of the first and second area is substantially the same as the overlapping area and covers substantially the top of the gap. 12. The method according to claim 1, wherein the third reactant is introduced with a saturating dose to ensure that the bottom of the gap is reached by the third reactant. 13. The method according to claim 5, wherein the one of the first and second reactants comprise silicon. 14. The method according to claim 13, wherein the one of the first and second reactants comprises silanediamine. 15. The method according to claim 14, wherein the silanediamine comprises N,N,N′,N′-tetraethyl silanediamine. 16. The method according to claim 8, wherein the low growth reactant comprises nitrogen. 17. The method according to claim 8, wherein the low growth reactant is activated by a plasma. 18. The method according to claim 1, wherein the third reactant comprises oxygen. 19. The method according to claim 1, wherein the third reactant is activated by a plasma. 20. The method according to claim 1, wherein the deposition method comprises in between introducing the second and the third reactant introducing the first reactant again to the substrate. 21. The method according to claim 1, wherein the third reactant comprises ozone and/or hydrogen peroxide. 22. The method according to claim 1, wherein one of the first and second reactants comprises an organometal. 23. The method according to claim 22, wherein the organometal comprises an organoaluminium. 24. The method according to claim 23, wherein the organoaluminium comprises a trimethylaluminium. 25. The method according to claim 24, wherein the other of the first and second reactants comprises ozone. 26. The method according to claim 1, wherein the third reactant comprises water, hydrogen peroxide or hydrazine.
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