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| 국가/구분 | United States(US) Patent 등록 |
|---|---|
| 국제특허분류(IPC7판) |
|
| 출원번호 | US-0714050 (2015-05-15) |
| 등록번호 | US-9887096 (2018-02-06) |
| 발명자 / 주소 |
|
| 출원인 / 주소 |
|
| 대리인 / 주소 |
|
| 인용정보 | 피인용 횟수 : 17 인용 특허 : 585 |
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing regi
A method of etching exposed silicon oxide on patterned heterogeneous structures is described and includes a gas phase etch created from a remote plasma etch. The remote plasma excites a fluorine-containing precursor. Plasma effluents from the remote plasma are flowed into a substrate processing region where the plasma effluents combine with water vapor. Reactants thereby produced etch the patterned heterogeneous structures to remove two separate regions of differing silicon oxide at different etch rates. The methods may be used to remove low density silicon oxide while removing less high density silicon oxide.
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon oxide regions, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substr
1. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon oxide regions, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents;flowing the plasma effluents through through-holes in a showerhead positioned between the remote plasma region and the substrate processing region;flowing water vapor into the substrate processing region without first passing the water vapor through the remote plasma region; andetching the exposed silicon oxide regions by flowing the plasma effluents into the substrate processing region, wherein the etching operation does not produce solid by-products of the exposed silicon oxide regions, wherein the exposed silicon oxide regions comprise a first silicon oxide region having a first density and a second silicon oxide region having a second density, wherein both regions of silicon oxide are characterized by the molecular formula SiO2, wherein the first density is less than the second density and the first silicon oxide region etches at a first etch rate and the second silicon oxide region etches at a second etch rate which is lower than the first etch rate, and wherein the first etch rate exceeds the second etch rate by a factor of about 8 or more. 2. The method of claim 1 wherein the first silicon oxide region was deposited using dichlorosilane as a precursor. 3. The method of claim 1 wherein the first silicon oxide region was deposited using plasma-enhanced chemical vapor deposition. 4. The method of claim 1 wherein the second silicon oxide region was deposited using high-density plasma chemical vapor deposition. 5. The method of claim 1 wherein the first etch rate exceeds the second etch rate by a factor of about 15 or more. 6. The method of claim 1 wherein the first etch rate exceeds the second etch rate by a factor of about 25 or more. 7. The method of claim 1 wherein the substrate processing region is plasma-free. 8. The method of claim 1 wherein the water vapor is not excited by any remote plasma formed outside the substrate processing region. 9. The method of claim 1 wherein the fluorine-containing precursor comprises a precursor selected from the group consisting of atomic fluorine, diatomic fluorine, nitrogen trifluoride, carbon tetrafluoride, hydrogen fluoride and xenon difluoride. 10. The method of claim 1 wherein the fluorine-containing precursor and the plasma effluents are essentially devoid of hydrogen. 11. The method of claim 1 wherein the showerhead comprises a dual-zone showerhead, and wherein the water vapor passes through separate zones in the dual-zone showerhead, wherein the separate zones open into the substrate processing region but not into the remote plasma region. 12. The method of claim 1 wherein a temperature of the patterned substrate is greater than or about 0° C. and less than or about 100° C. during the etching operation. 13. The method of claim 1 wherein a temperature of the patterned substrate is greater than or about 5° C. and less than or about 40° C. during the etching operation. 14. The method of claim 1 wherein a pressure within the substrate processing region is below or about 50 Torr and above or about 0.1 Torr during the etching operation. 15. The method of claim 1 wherein forming a plasma in the remote plasma region to produce plasma effluents comprises applying RF power between about 10 watts and about 2000 watts to the remote plasma region. 16. The method of claim 1 wherein a plasma in the remote plasma region is a capacitively-coupled plasma. 17. A method of etching a patterned substrate in a substrate processing region of a substrate processing chamber, wherein the patterned substrate has exposed silicon oxide regions, the method comprising: flowing a fluorine-containing precursor into a remote plasma region fluidly coupled to the substrate processing region while forming a remote plasma in the remote plasma region to produce plasma effluents, wherein the fluorine-containing precursor is essentially devoid of hydrogen;flowing the plasma effluents through through-holes in a showerhead positioned between the remote plasma region and the substrate processing region;flowing water vapor into the substrate processing region without first passing the water vapor through the remote plasma region; andetching the exposed silicon oxide regions by flowing the plasma effluents into the substrate processing region, wherein the exposed silicon oxide regions comprise a first silicon oxide region having a first density and a second silicon oxide region having a second density, wherein the first silicon oxide region and second silicon oxide region comprise stoichiometrically equivalent materials, wherein the first density is less than the second density, and wherein the first silicon oxide region etches at a first etch rate and the second silicon oxide region etches at a second etch rate which is lower than the first etch rate, and wherein the first etch rate exceeds the second etch rate by a factor of about 8 or more.
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