A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and
A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.
대표청구항▼
1. A semiconductor light-emitting device package, comprising: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising a first light-emitting
1. A semiconductor light-emitting device package, comprising: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first light-emitting laminate and the second light-emitting laminate comprising: a first conductivity-type semiconductor layer;an active layer, anda second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface,an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first light-emitting laminate and the second light-emitting laminate;a metal guide surrounding the side surfaces of the light-emitting structure; andan encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure,wherein the interconnector and the metal guide are disposed with substantially a same thickness, in a thickness direction of the first light-emitting laminate and the second light-emitting laminate. 2. The semiconductor light-emitting device package of claim 1, wherein the encapsulant is provided between the metal guide and the light-emitting structure. 3. The semiconductor light-emitting device package of claim 1, wherein the encapsulant is provided between the interconnector and the metal guide. 4. The semiconductor light-emitting device package of claim 1, wherein at least a portion of the interconnector is connected to the metal guide. 5. The semiconductor light-emitting device package of claim 1, wherein the first light-emitting laminate and the second light-emitting laminate are arranged in a first direction, and wherein the interconnector extends from a first side to a second side opposite to the first side of the metal guide between adjacent light-emitting laminates in a second direction substantially perpendicular to the first direction. 6. The semiconductor light-emitting device package of claim 1, wherein each of the first light-emitting laminate and the second light-emitting laminate further comprises: a first electrode structure connected to the first conductivity-type semiconductor layer; anda second electrode structure connected to the second conductivity-type semiconductor layer. 7. The semiconductor light-emitting device package claim 6, wherein the first electrode structure comprises: a first contact disposed in a contact hole passing through the second conductivity-type semiconductor layer and the active layer and exposing a portion of the first conductivity-type semiconductor layer while being in contact with the first conductivity-type semiconductor layer; anda first connector connected to the first contact, andwherein the second electrode structure comprises:a second contact in contact with the second conductivity-type semiconductor layer; anda second connector connected to the second contact. 8. The semiconductor light-emitting device package of claim 6, wherein: a first pad is provided on the first electrode structure of the first light-emitting laminate;a second pad is provided on the second electrode structure of the second light-emitting laminate; andfirst and second metal posts are connected to the first pad and the second pad, respectively, the first and second metal posts having portions exposed from the encapsulant so as to be connected to an external power source. 9. The semiconductor light-emitting device package of claim 8, wherein the metal guide is connected to at least one of the first pad and the second pad. 10. The semiconductor light-emitting device package of claim 1, wherein the interconnector connects the first conductivity-type semiconductor layer of the first light-emitting laminate to the second conductivity-type semiconductor layer of the second light-emitting laminate. 11. The semiconductor light-emitting device package of claim 1, wherein the interconnector and the metal guide are formed of a same material. 12. The semiconductor light-emitting device package of claim 1, wherein a first coefficient of thermal expansion of the metal guide is greater than a second coefficient of thermal expansion of the first light-emitting laminate and the second light-emitting laminate, and lower than a third coefficient of thermal expansion of the encapsulant. 13. The semiconductor light-emitting device package of claim 1, further comprising a transparent resin layer containing phosphor on the first light-emitting laminate and the second light-emitting laminate. 14. The semiconductor light-emitting device package of claim 1, wherein the first conductivity-type semiconductor layer comprises embossings formed on an upper surface thereof. 15. A semiconductor light-emitting device package, comprising: a light-emitting structure having a first surface which is a light-emitting surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first light-emitting laminate and the second light-emitting laminate comprising:a first conductivity-type semiconductor layer;an active layer, anda second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface,an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first light-emitting laminate and the second light-emitting laminate;a metal guide surrounding the side surfaces of the light-emitting structure; andan encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure,wherein an upper surface of the metal guide is disposed at a height equal to or lower than the first surface of the light-emitting structure, andwherein the interconnector and the metal guide are disposed with substantially a same thickness, in a thickness direction of the first light-emitting laminate and the second light-emitting laminate. 16. A semiconductor light-emitting device package, comprising: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first surface and the second surface, the light-emitting structure comprising at least one light-emitting laminate, the at least one light-emitting laminate comprising:a first conductivity-type semiconductor layer;an active layer; anda second conductivity-type semiconductor layer, the first conductivity-type semiconductor layer, the active layer and the second conductivity-type semiconductor layer being sequentially stacked in a direction from the first surface to the second surface;a first electrode structure formed on the second surface of the light-emitting structure, disposed in a contact hole passing through the second conductivity-type semiconductor layer and the active layer to expose a portion of the first conductivity-type semiconductor layer, the first electrode structure being in contact with the first conductivity-type semiconductor layer;a second electrode structure disposed on the second conductivity-type semiconductor layer;an interconnector provided on the second surface of the light-emitting structure;a metal guide spaced apart from the light-emitting structure and surrounding the side surfaces of the light-emitting structure;an encapsulant encapsulating the metal guide, surrounding the second surface and the side surfaces of the light-emitting structure, and exposing the first surface of the light-emitting structure; anda first metal post and a second metal post being connected to the first electrode structure and the second electrode structure of the light-emitting structure, respectively, and having portions exposed from the encapsulant so as to be electrically connected to an external power source,wherein the interconnector and the metal guide are disposed with substantially a same thickness, in a thickness direction of the at least one light-emitting laminate.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.