Provided is a non-alkali glass having a strain point of 680° C. or higher, having an average thermal expansion coefficient of from 30×10−7/° C. to 45×10−7/° C. at from 50° C. to 350° C., containing, indicated by mass % on the basis of oxides: SiO2: 54% to 66%, Al2O3: 10% to 27%, B2O3: 0.2% to 5.5%,
Provided is a non-alkali glass having a strain point of 680° C. or higher, having an average thermal expansion coefficient of from 30×10−7/° C. to 45×10−7/° C. at from 50° C. to 350° C., containing, indicated by mass % on the basis of oxides: SiO2: 54% to 66%, Al2O3: 10% to 27%, B2O3: 0.2% to 5.5%, MgO: 0% to 10%, CaO: 0% to 15%, SrO: 0% to 15%, BaO: 0% to 15%, and MgO+CaO+SrO+BaO: 8% to 25%, containing 600 mass ppm or less of Na2O, and satisfying a mass ratio (Na2O/B2O3) between Na2O and B2O3 being from 0.001 to 0.3.
대표청구항▼
1. A non-alkali glass having a strain point of 680° C. or higher, having an average the thermal expansion coefficient of from 30×10−7/° C. to 43×10−7/° C. at from 50° C. to 350° C., comprising, indicated by mass % on the basis of oxides: SiO2: 54% to 66%,Al2O3: 10% to 27%,B2O3: 0.2% to 5.5%,MgO: 0%
1. A non-alkali glass having a strain point of 680° C. or higher, having an average the thermal expansion coefficient of from 30×10−7/° C. to 43×10−7/° C. at from 50° C. to 350° C., comprising, indicated by mass % on the basis of oxides: SiO2: 54% to 66%,Al2O3: 10% to 27%,B2O3: 0.2% to 5.5%,MgO: 0% to 10%,CaO: 0% to 15%,SrO: 0% to 15%,BaO: 0% to 15%, andMgO+CaO+SrO+BaO: 8% to 25%,comprising 600 mass ppm or less of Na2O, andsatisfying a mass ratio (Na2O/B2O3) between Na2O and B2O3 being from 0.001 to 0.3. 2. The non-alkali glass according to claim 1, having a denitrification viscous property η satisfying log η=3.5 [dPa·s] or more, comprising, indicated by mass % on the basis of oxides: SiO2: 57% to 63%,Al2O3: 18% to 23%,B2O3: 0.2% to 5.5%,MgO: 1% to 8.5%,CaO: 3% to 12%,SrO: 0% to 10%,BaO: 0% to 5%, andMgO+CaO+SrO+BaO: 13% to 23%, andsatisfying:MgO/(MgO+CaO+SrO+BaO) being 0.15 or more,CaO/(MgO+CaO+SrO+BaO) being 0.60 or less,SrO/(MgO+CaO+SrO+BaO) being 0.70 or less, andBaO/(MgO+CaO+SrO+BaO) being 0.50 or less. 3. The non-alkali glass according to claim 1, having a devitrification viscous property η satisfying log η=4.5 [dPa·s] or more, comprising, indicated by mass % on the basis of oxides: SiO2: 58% to 65%,Al2O3: 14% to 22%,B2O3: 0.2% to 5.5%,MgO: 0% to 6%,CaO: 3% to 12%,SrO: 0% to 10%,BaO: 0% to 10%, andMgO+CaO+SrO+BaO: 8% to 22%, andsatisfying:MgO/(MgO+CaO+SrO+BaO) being 0.25 or less,CaO/(MgO±CaO+SrO+BaO) being 0.20 or more,SrO/(MgO+CaO+SrO+BaO) being 0.50 or less, andBaO/(MgO±CaO+SrO+BaO) being 0.70 or less. 4. The non-alkali glass according to claim 1, wherein the mass ratio (Na2O/B2O3) between Na2O and B2O3 is 0.001 or more and less than 0.06. 5. The non-alkali glass according to claim 1, having a strain point of 680° C. to 780° C. 6. The non-alkali glass according to claim 1, having a strain point of 690° C. to 730° C. 7. The non-alkali glass according to claim 1, having an average thermal expansion coefficient of from 35×10−7/° C. to 40×10−7/° C. 8. The non-alkali glass according to claim 1, having a thermal shrinkage rate of 90 ppm or less. 9. The non-alkali glass according to claim 1, obtained by cooling at an equivalent cooling rate of 400° C./minute or less. 10. A thin film transistor, comprising the non-alkali glass according to claim 1. 11. A thin film transistor, comprising the non-alkali glass according to claim 2. 12. A thin film transistor, comprising the non-alkali glass according to claim 3. 13. A thin film transistor, comprising the non-alkali glass according to claim 8. 14. A thin film transistor, comprising the non-alkali glass according to claim 9. 15. A thin film transistor, comprising the non-alkali glass according to claim 4. 16. A thin film transistor, comprising the non-alkali glass according to claim 5. 17. A thin film transistor, comprising the non-alkali glass according to claim 6. 18. A thin film transistor, comprising the non-alkali glass according to claim 7.
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