초록 ▼

A method and apparatus for processing a silicon substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon conta

A method and apparatus for processing a silicon substrate are provided. In some implementations, the method comprises providing a silicon substrate having an aperture containing an exposed silicon contact surface at a bottom of the aperture, depositing a metal seed layer on the exposed silicon contact surface and exposing the silicon substrate to an electroplating process by flowing a current through a backside of the silicon substrate to form a metal layer on the metal seed layer.

대표청구항 ▼

1. A method for depositing a material on a substrate, comprising: depositing a conformal oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature; anda backside, wherein the

1. A method for depositing a material on a substrate, comprising: depositing a conformal oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature; anda backside, wherein the feature extends from the field region toward the backside;selectively removing a portion of the conformal oxide layer from the bottom surface of the feature to expose a portion of the silicon substrate;depositing a metal seed layer on the exposed portion of the silicon substrate at the bottom surface of the feature;forming a conformal barrier layer on the conformal oxide layer after depositing the metal seed layer on the exposed portion of the silicon substrate; andexposing the silicon substrate to an electroplating process by flowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer. 2. The method of claim 1, wherein the exposing the silicon substrate to an electroplating process by flowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer comprises exposing the backside of the silicon substrate to a wet contact solution comprising a hydrofluoric acid solution and exposing the metal seed layer to a copper containing solution. 3. The method of claim 2, wherein the wet contact solution further comprises potassium fluoride. 4. The method of claim 1, wherein the conformal barrier layer comprises titanium nitride (TiN), tungsten nitride (WN), or tungsten-silicon nitride (WSiN). 5. The method of claim 4, wherein the conformal oxide layer is a silicon dioxide layer. 6. The method of claim 1, wherein the metal of the metal seed layer is selected from cobalt and nickel. 7. The method of claim 6, wherein the metal of the metal seed layer is nickel deposited by an electroless process. 8. The method of claim 6, wherein the metal of the metal seed layer is cobalt deposited by either an electroless process or a chemical vapor deposition process. 9. The method of claim 1, wherein the metal layer comprises copper. 10. The method of claim 1, wherein the feature is an aperture selected from contacts, vias, and lines. 11. The method of claim 1, wherein the exposing the silicon substrate to an electroplating process by flowing a current through a backside of the silicon substrate to form a metal layer on the metal seed layer comprises exposing the backside of the silicon substrate to a potassium hydroxide solution and exposing the metal seed layer to a copper containing solution. 12. A method for depositing a material on a substrate, comprising: depositing an oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature and having an oxide layer disposed thereon; anda backside, wherein the feature extends from the field region toward the backside;selectively removing a portion of the oxide layer from the bottom surface of the feature to expose a portion of the silicon substrate, wherein at least a portion of the oxide layer remains on the at least one sidewall;depositing a metal seed layer on the exposed portion of the silicon substrate at the bottom surface of the feature;forming a barrier layer on the portion of the oxide layer remaining on the at least one sidewall, wherein the barrier layer comprises titanium nitride (TiN), tungsten nitride (WN), or tungsten-silicon nitride (WSiN); andexposing the silicon substrate to an electroplating process, comprising: exposing the backside of the silicon substrate to a potassium hydroxide solution and exposing the seed layer to a copper containing solution; andflowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer. 13. The method of claim 12, wherein the metal of the metal seed layer is nickel deposited by an electroless process. 14. The method of claim 13, wherein the metal layer comprises copper. 15. The method of claim 12, wherein the feature is an aperture selected from contacts, vias, and lines. 16. A method for depositing a material on a substrate, comprising: depositing an oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature and having an oxide layer disposed thereon; anda backside, wherein the feature extends from the field region toward the backside;selectively removing a portion of the oxide layer from the bottom surface of the feature to expose a portion of the silicon substrate, wherein selectively removing a portion of the oxide layer comprises exposing the oxide layer to an argon-based sputter etching process followed by a wet etch process, and at least a portion of the oxide layer remains on the at least one sidewall;depositing a metal seed layer on the exposed portion of the silicon substrate at the bottom surface of the feature;forming a barrier layer on the portion of the oxide layer remaining on the at least one sidewall; andexposing the silicon substrate to an electroplating process by flowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer. 17. A method for depositing a material on a substrate, comprising: depositing a conformal oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature; anda backside, wherein the feature extends from the field region toward the backside;selectively removing a portion of the conformal oxide layer from the bottom surface of the feature to expose a portion of the silicon substrate;depositing a metal seed layer on the exposed portion of the silicon substrate at the bottom surface of the feature; andexposing the silicon substrate to an electroplating process, comprising: exposing the backside of the silicon substrate to a wet contact solution comprising a hydrofluoric acid solution and potassium fluoride;exposing the seed layer to a copper containing solution; andflowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer. 18. The method of claim 17, wherein the metal layer comprises copper and the metal of the metal seed layer is selected from cobalt and nickel. 19. A method for depositing a material on a substrate, comprising: depositing a conformal oxide layer over at least one sidewall and a bottom surface of a feature formed in a silicon substrate, wherein the silicon substrate comprises: a field region surrounding the feature; anda backside, wherein the feature extends from the field region toward the backside;selectively removing a portion of the conformal oxide layer from the bottom surface of the feature to expose a portion of the silicon substrate;depositing a metal seed layer on the exposed portion of the silicon substrate at the bottom surface of the feature;forming a conformal barrier layer on the oxide layer after depositing the metal seed layer on the exposed silicon substrate; andexposing the silicon substrate to an electroplating process, comprising: exposing the backside of the silicon substrate to a potassium hydroxide solution;exposing the metal seed layer to a copper containing solution; andflowing a current through the backside of the silicon substrate to form a metal layer on the metal seed layer. 20. The method of claim 19, wherein the metal layer comprises copper and the metal of the metal seed layer is selected from cobalt and nickel.