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Memory device and system supporting command bus training, and operating method thereof 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • G11C-008/10
  • G11C-007/10
  • G11C-008/18
  • G11C-007/22
  • G11C-029/02
출원번호 US-0298491 (2016-10-20)
등록번호 US-9959918 (2018-05-01)
우선권정보 KR-10-2015-0146097 (2015-10-20); KR-10-2016-0120138 (2016-09-20)
발명자 / 주소
  • Kim, Hye-Ran
  • Oh, Tae-Young
출원인 / 주소
  • SAMSUNG ELECTRONICS CO., LTD.
대리인 / 주소
    Muir Patent Law, PLLC
인용정보 피인용 횟수 : 0  인용 특허 : 26

초록

An operating method of a memory device includes entering into a command bus training mode, generating a plurality of internal clock signals by dividing a received clock signal, generating a plurality of internal chip selection signals by latching a received chip selection signal according to the plu

대표청구항

1. An operating method of a memory device supporting command bus training, the operating method comprising: entering into a mode of the command bus training;receiving a clock signal, chip selection signal and a first command/address signal;generating a plurality of internal clock signals by dividing

이 특허에 인용된 특허 (26)

  1. Salmon, Joe; Bains, Kuljit, Bus frequency adjustment circuitry for use in a dynamic random access memory device.
  2. Lee, Terry R.; Ryan, Kevin J.; Jeddeloh, Joseph M., Device and system for adjusting delay in a data path based on comparison of data from a latch and data from a register.
  3. Kawabata Kuninori,JPX ; Matsumiya Masato,JPX ; Eto Satoshi,JPX ; Nakamura Toshikazu,JPX ; Higashiho Mitsuhiro,JPX ; Takita Masato,JPX ; Koga Toru,JPX ; Kanou Hideki,JPX ; Kitamoto Ayako,JPX, Electronic device and semiconductor memory device using the same.
  4. Yamazaki Masafumi,JPX ; Tomita Hiroyoshi,JPX ; Matsuzaki Yasurou,JPX, Integrated circuit device with built-in self timing control circuit.
  5. Pickett James K. (Kokomo IN) Inman Philip A. (Kokomo IN) Sale Matthew D. (Kokomo IN), Interface circuit for interfacing a peripheral device with a microprocessor operating in either a synchronous or an asyn.
  6. Bae, Seungjun; Kim, JinGook; Park, Kwangil; Chung, Daehyun, Internal clock signal generating circuits including frequency division and phase control and related methods, systems, and devices.
  7. Hoang Tri Minh ; Zien Livia ; Doyle Scott ; Lawson David, Memory device having a chip select speedup feature and associated methods.
  8. Jeon, Young-Jin, Memory devices, systems and methods employing command/address calibration.
  9. Shigeki Tomishima JP; Masatoshi Ishikawa JP; Tsukasa Ooishi JP, Memory system for synchronized and high speed data transfer.
  10. Bae, Seung Jun; Park, Kwang Il; Bang, Sam Young; Moon, Gil Shin; Yeom, Ki Woong, Method and apparatus for tuning phase of clock signal.
  11. Butt, Derrick Sai-Tang; Kong, Cheng-Gang; Magee, Terence J.; Hughes, Thomas, Multiple memory standard physical layer macro function.
  12. Tsukasa Ooishi JP, Phase-lock loop with independent phase and frequency adjustments.
  13. Buchmann, Peter L.; Ferraiolo, Frank D.; Gower, Kevin C.; Reese, Robert J.; Retter, Eric E.; Schmatz, Martin L.; Spear, Michael B.; Thomsen, Peter M.; Trombley, Michael R., Power-on initialization and test for a cascade interconnect memory system.
  14. Tomita, Hiroyoshi, Semiconductor integrated circuit capable of adjusting the operation timing of an internal circuit based on operating environments.
  15. Fujieda Waichirou,JPX ; Sato Yasuharu,JPX ; Taniguchi Nobutaka,JPX ; Tomita Hiroyoshi,JPX ; Matsuzaki Yasurou,JPX, Semiconductor integrated circuit device.
  16. Park, Jung-Hoon, Semiconductor memory device.
  17. Ryuichi Kosugi JP, Semiconductor memory device employing pipeline operation with reduced power consumption.
  18. Park, Jung-Hoon, Semiconductor memory device having a clock alignment training circuit and method for operating the same.
  19. Hara Kouji (Hadano JPX) Kurihara Ryoichi (Hadano JPX), Semiconductor memory with alternately multiplexed row and column addressing.
  20. Hajime Usami JP, Signal control circuit for controlling signals to and from a subsidiary processing circuit.
  21. Okasaka Yasuhiko,JPX, Synchronous semiconductor memory device capable of generating stable internal voltage.
  22. Ooishi Tsukasa,JPX, Synchronous semiconductor memory device capable of more reliable communication of control signal and data.
  23. Uchida Toshiya,JPX, Synchronous semiconductor memory device having input circuit with reduced power consumption.
  24. Sato Hirotoshi (Tokyo JPX) Ohbayashi Shigeki (Tokyo JPX), Synchronous semiconductor memory device operable in a snooze mode.
  25. Murai Yasumitsu (Hyogo JPX) Iwamoto Hisashi (Hyogo JPX) Konishi Yasuhiro (Hyogo JPX) Watanabe Naoya (Hyogo JPX) Sawada Seiji (Hyogo JPX), Synchronous type semiconductor memory device operating in synchronization with an external clock signal.
  26. Kang, Shin-Chan, Wrapper circuit and method for interfacing between non-muxed type memory controller and muxed type memory.
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