A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a firs
A semiconductor structure is provided that includes a first metal resistor structure located on a portion of a dielectric-containing substrate. The first metal resistor structure includes, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion. The semiconductor structure of the present application further includes a second metal resistor structure located on a second portion of the dielectric-containing substrate and spaced apart from the first metal resistor structure. The second metal resistor structure includes, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion.
대표청구항▼
1. A semiconductor structure comprising: a first metal resistor structure located on a portion of a dielectric-containing substrate, said first metal resistor structure comprises, from bottom to top, a first nitridized dielectric surface layer portion having a first atomic percent nitrogen content,
1. A semiconductor structure comprising: a first metal resistor structure located on a portion of a dielectric-containing substrate, said first metal resistor structure comprises, from bottom to top, a first nitridized dielectric surface layer portion having a first atomic percent nitrogen content, a first metal portion, and a first dielectric capping layer portion; anda second metal resistor structure located on a second portion of said dielectric-containing substrate and spaced apart from said first metal resistor structure, wherein said second metal resistor structure comprises, from bottom to top, a second nitridized dielectric surface layer portion having a second atomic percent nitrogen content that differs from the first atomic percent nitrogen content, a second metal portion, and a second dielectric capping layer portion. 2. The semiconductor structure of claim 1, wherein said dielectric-containing substrate comprises, from bottom to top, a base interconnect dielectric material layer, a base dielectric capping layer, and an interconnect dielectric material layer, wherein said base interconnect dielectric material layer comprises at least one conductive region embedded therein. 3. The semiconductor structure of claim 1, wherein at least one of said first atomic percent nitrogen content and said second atomic percent nitrogen content is 10 atomic percent or greater. 4. The semiconductor structure of claim 1, wherein said first metal resistor structure has a different resistivity than said second metal resistor structure. 5. The semiconductor structure of claim 1, wherein said first nitridized dielectric surface layer portion and said second nitridized dielectric surface layer portion comprise a same dielectric material. 6. The semiconductor structure of claim 5, wherein said dielectric material of said first nitridized dielectric surface layer portion and said second nitridized dielectric surface layer portion is the same as an upper portion of said dielectric-containing substrate. 7. The semiconductor structure of claim 1, wherein said first metal portion and said second metal portion comprise a same metal or metal alloy. 8. The semiconductor structure of claim 7, wherein said metal or metal alloy is selected from TaN, Ta, TiN, Ta, RuN, Ru, CoN, Co, WN, W, TaRuN and TaRu. 9. The semiconductor structure of claim 1, wherein said first dielectric capping layer portion and said second dielectric capping layer portion comprise a same dielectric capping material. 10. The semiconductor structure of claim 1, wherein sidewall surfaces of said first nitridized dielectric surface layer portion, said first metal portion, and said first dielectric capping layer portion are vertically aligned with each other, and wherein sidewall surfaces of said second nitridized dielectric surface layer portion, said second metal portion, and said second dielectric capping layer portion are vertically aligned with each other. 11. The semiconductor structure of claim 1, further comprising a contact structure formed surrounding said first and second metal resistor structures, wherein said contact structure includes metal contacts extending to a topmost surface of each of said first metal portion and said second metal portion. 12. A semiconductor structure comprising: a first metal resistor structure located on a portion of a dielectric-containing substrate, said first metal resistor structure comprises, from bottom to top, a first nitridized dielectric surface layer portion having a first nitrogen content, a first metal portion, and a first dielectric capping layer portion; anda second metal resistor structure located on a second portion of said dielectric-containing substrate and spaced apart from said first metal resistor structure, wherein said second metal resistor structure comprises, from bottom to top, a second nitridized dielectric surface layer portion having a second nitrogen content that differs from the first nitrogen content, a second metal portion, and a second dielectric capping layer portion, and wherein each of said first and second metal portions is composed of at least one metal and is devoid of nitrogen.
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이 특허에 인용된 특허 (8)
Yang, Chih-Chao; Edelstein, Daniel C.; Molis, Steven E., Enhanced diffusion barrier for interconnect structures.
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