Top port multi-part surface mount silicon condenser microphone
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H04R-001/28
B81B-007/00
H04R-019/00
H04R-019/01
H04R-019/04
H04R-031/00
B81C-001/00
H01L-023/10
H01L-023/15
H04R-001/04
H04R-003/00
B81C-003/00
B81B-003/00
H01L-021/78
H04R-001/22
H04R-023/00
출원번호
US-0606686
(2017-05-26)
등록번호
US-9980038
(2018-05-22)
발명자
/ 주소
Minervini, Anthony D.
출원인 / 주소
Knowles Electronics, LLC
대리인 / 주소
Foley & Lardner LLP
인용정보
피인용 횟수 :
0인용 특허 :
199
초록▼
A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package a
A surface mount package for a micro-electro-mechanical system (MEMS) microphone die is disclosed. The surface mount package features a substrate with metal pads for surface mounting the package to a device's printed circuit board and for making electrical connections between the microphone package and the device's circuit board. The surface mount microphone package has a cover, and the MEMS microphone die is substrate-mounted and acoustically coupled to an acoustic port provided in the surface mount package. The substrate and the cover are joined together to form the MEMS microphone, and the substrate and cover cooperate to form an acoustic chamber for the substrate-mounted MEMS microphone die.
대표청구항▼
1. A silicon condenser microphone comprising: means for electrically interfacing to a printed circuit board comprising: a top layer comprising a first conductive layer with a first non-conductive layer disposed on a lower surface of the first conductive layer, wherein the first conductive layer is p
1. A silicon condenser microphone comprising: means for electrically interfacing to a printed circuit board comprising: a top layer comprising a first conductive layer with a first non-conductive layer disposed on a lower surface of the first conductive layer, wherein the first conductive layer is patterned to form a plurality of conductive pads;a bottom layer comprising a second non-conductive layer with a second conductive layer disposed on a lower surface of the second non-conductive layer, wherein the second conductive layer is pattered to form a plurality of flat solder pads, wherein the top and bottom layers are in facing relation to each other; andone or more electrical paths disposed completely within the means for electrically interfacing, wherein the one or more electrical paths electrically couple one or more of the plurality of conductive pads in the first conductive layer to one or more of the solder pads in the second conductive layer,wherein the means for electrically interfacing is rigid, is adapted for solder reflow surface mounting, and has substantially planar top and bottom surfaces;a micro-electro-mechanical system (MEMS) microphone die mounted to the top surface of the means for electrically interfacing and electrically coupled to at least one of the conductive pads in the first conductive layer; anda single-piece environmental protection means that includes an acoustic port, wherein the environmental protection means is formed from a solid material and has a predetermined shape with a rectangular top portion and a substantially vertical and continuous sidewall portion that adjoins the top portion at an angle and that completely surrounds and supports the top portion, the sidewall portion having a predetermined height, an exterior sidewall surface, an interior sidewall surface, and an attachment surface, the acoustic port disposed in the top portion of the environmental protection means and passing completely through the environmental protection means,wherein the attachment surface of the sidewall portion of the environmental protection means is aligned with and attached to a peripheral region along each edge of the top surface of the means for electrically interfacing, andwherein the predetermined height of the sidewall portion of the environmental protection means, the interior sidewall surface of the sidewall portion of the environmental protection means, and an interior surface of the top portion of the environmental protection means, in cooperation with the top surface of the means for electrically interfacing, provide a protective enclosure for the MEMS microphone die to reduce electromagnetic interference. 2. The silicon condenser microphone of claim 1, wherein the means for electrically interfacing further comprises a recess disposed within the means for electrically interfacing, and the MEMS microphone die is positioned over the recess. 3. The silicon condenser microphone of claim 1, wherein the means for electrically interfacing further comprises an internal cavity with an aperture in the top surface of the means for electrically interfacing, the internal cavity extending longitudinally within the means for electrically interfacing, and the MEMS microphone die is positioned over the aperture in the top surface of the means for electrically interfacing. 4. The silicon condenser microphone of claim 1, wherein the MEMS microphone die is a pressure-equalizing MEMS microphone die, and wherein a diaphragm of the MEMS microphone die defines a front volume and a back volume within the protective enclosure, and the acoustic port disposed in the environmental protection means is acoustically coupled to the diaphragm. 5. The silicon condenser microphone of claim 4, wherein the interface between the attachment surface of the sidewall portion of the environmental protection means and the top surface of the means for electrically interfacing is sealed to maintain acoustic pressure within the front volume. 6. The silicon condenser microphone of claim 1, wherein the first and second non-conductive layers comprise one or more layers of FR-4 printed circuit board material. 7. The silicon condenser microphone of claim 1, wherein the means for electrically interfacing further comprises: a third conductive layer disposed on a lower surface of the first non-conductive layer;a fourth conductive layer disposed on a upper surface of the second non-conductive layer, wherein the third and fourth conductive layers are patterned into electrodes;a passive electronic material layer disposed between the third and fourth conductive layers and in electrical contact with the third and fourth conductive layers. 8. The silicon condenser microphone of claim 7, wherein the passive electronic material layer is a resistive material, and is electrically coupled to one or more of the plurality of conductive pads in the first conductive layer or one or more of the solder pads in the second conductive layer through one or more of the electrodes formed in the third and fourth conductive layers. 9. The silicon condenser microphone of claim 7, wherein the passive electronic material layer is a capacitive dielectric material, and is electrically coupled to one or more of the plurality of conductive pads in the first conductive layer or one or more of the solder pads in the second conductive layer through one or more of the electrodes formed in the third and fourth conductive layers. 10. The silicon condenser microphone of claim 7, wherein a passive electrical element formed in the passive electronic material layer filters one or more of an input signal, an output signal, or input power. 11. A micro-electro-mechanical system (MEMS) microphone, the microphone comprising: means for electrically interfacing to a printed circuit board comprising: a top layer comprising a first conductive layer with a first non-conductive layer disposed on a lower surface of the first conductive layer, wherein the first conductive layer is patterned to form a plurality of conductive pads;a bottom layer comprising a second non-conductive layer with a second conductive layer disposed on a lower surface of the second non-conductive layer, wherein the second conductive layer is pattered to form a plurality of flat solder pads, the top and bottom layers in facing relation to each other;one or more electrical paths disposed completely within the means for electrically interfacing, wherein the one or more electrical paths electrically couple one or more of the plurality of conductive pads in the first conductive layer to one or more of the solder pads in the second conductive layer; and an acoustic port disposed in an interior region of the means for electrically interfacing and passing completely through the means for electrically interfacing, wherein one of the plurality of flat solder pads in the second conductive layer is a metal ring that completely surrounds the acoustic port in the means for electrically interfacing,wherein the means for electrically interfacing is rigid, is adapted for solder reflow surface mounting, and has substantially planar top and bottom surfaces;a micro-electro-mechanical system (MEMS) microphone die mounted to the top surface of the means for electrically interfacing and electrically coupled to at least one of the conductive pads in the first conductive layer, the MEMS microphone die being disposed directly over the acoustic port in the means for electrically interfacing; anda single-piece environmental protection means, wherein the environmental protection means is formed from a solid material and has a predetermined shape with a rectangular top portion and a substantially vertical and continuous sidewall portion that adjoins the top portion at an angle and that completely surrounds and supports the top portion, the sidewall portion having a predetermined height, an exterior sidewall surface, an interior sidewall surface, and an attachment surface,wherein the attachment surface of the sidewall portion of the environmental protection means is aligned with and attached to a peripheral region along each edge of the top surface of the means for electrically interfacing, andwherein the predetermined height of the sidewall portion of the environmental protection means, the interior sidewall surface of the sidewall portion of the environmental protection means, and an interior surface of the top portion of the environmental protection means, in cooperation with the top surface of the means for electrically interfacing, provide a protective enclosure for the MEMS microphone die to reduce electromagnetic interference. 12. The MEMS microphone of claim 11, wherein the means for electrically interfacing further comprises an acoustic material that substantially blocks contaminants from passing through the acoustic port. 13. The MEMS microphone of claim 12, wherein the acoustic material to block environmental contaminants is a film of polymeric material. 14. The MEMS microphone of claim 12, wherein the acoustic material to block environmental contaminants is hydrophobic. 15. The MEMS microphone of claim 11, wherein the MEMS microphone die is a pressure-equalizing MEMS microphone die, wherein a diaphragm of the MEMS microphone die defines a front volume and a back volume within the protective enclosure, and the acoustic port disposed in the means for electrically interfacing of the substrate is acoustically coupled to the front volume. 16. The MEMS microphone of claim 15, wherein the interface between the attachment surface of the sidewall portion of the cover and the peripheral region of the top surface of the means for electrically interfacing is sealed to maintain acoustic pressure within the back volume. 17. The MEMS microphone of claim 11, wherein the means for electrically interfacing further comprises: a third conductive layer disposed on a lower surface of the first non-conductive layer;a fourth conductive layer disposed on a upper surface of the second non-conductive layer, wherein the third and fourth conductive layers are patterned into electrodes;a passive electronic material layer disposed between the third and fourth conductive layers and in electrical contact with the third and fourth conductive layers. 18. The MEMS microphone of claim 17, wherein the passive electronic material layer is a resistive material, and is electrically coupled to one or more of the plurality of conductive pads in the first conductive layer or one or more of the solder pads in the second conductive layer through one or more of the electrodes formed in the third and fourth conductive layers. 19. The MEMS microphone of claim 17, wherein the passive electronic material layer is a capacitive dielectric material, and is electrically coupled to one or more of the plurality of conductive pads in the first conductive layer or one or more of the solder pads in the second conductive layer through one or more of the electrodes formed in the third and fourth conductive layers. 20. The MEMS microphone of claim 17, wherein a passive electrical element formed in the passive electronic material layer filters one or more of an input signal, an output signal, or input power.
연구과제 타임라인
LOADING...
LOADING...
LOADING...
LOADING...
LOADING...
이 특허에 인용된 특허 (199)
Marek Jiri (Reutlingen DEX) Bantien Frank (Ditzingen DEX) Haack Dietmar (Reutlingen DEX) Warth Martin (Schwaikhein DEX), Acceleration and vibration sensor and method of making the same.
Kaiser William J. (Los Angeles CA) Pister Kristofer S. J. (Pacific Palisades CA) Stafsudd Oscar M. (Los Angeles CA) Nelson Phyllis R. (Mar Vista CA) Burstein Amit (N. Hollywood CA), CMOS integrated microsensor with a precision measurement circuit.
Fasano Benjamin V. ; Indyk Richard F. ; Kamath Sundar M. ; Knickerbocker John U. ; Langenthal Scott I. ; O'Connor Daniel P. ; Reddy Srinivasa S. N., Ceramic substrate having a sealed layer.
Sprenkels Adrianus J. (Enschede NLX) Bergveld Piet (Enschede NLX), Electroacoustic transducer of the so-called “electret”type, and a method of making such a transducer.
Sprenkels Adrianus J. (Enschede NLX) Bergveld Piet (Enschede NLX), Electroacoustic transducer of the so-called “electret”type, and a method of making such a transducer.
Ristic Ljubisa (Paradise Valley AZ) Koury Daniel N. (Mesa AZ) Schmiesing John E. (Tempe AZ) Gutteridge Ronald J. (Paradise Valley AZ) Hughes Henry G. (Scottsdale AZ), Electronic device enclosure including a conductive cap and substrate.
McNeal Norman E. (Carlsbad CA) Nagy Richard A. (Leucadia CA) Norell Ronald A. (Carlsbad CA), Epoxy-glass integrated circuit package having bonding pads in a stepped cavity.
Sjursen,Walter P.; Mahoney,Derek D.; Margicin,John M.; Fritz,Frederick J.; Aceti,John G.; Preves,David A.; Palanisamy,Ponnusamy, Hearing aid with large diaphragm microphone element including a printed circuit board.
Lesinski S. George (324 Bishopsbridge Dr. Cincinnati OH 45255) Henderson H. Thurman (4010 Clifton Ave. Cincinnati OH 45220), Implantable auditory system with micromachined microsensor and microactuator.
Glenn Thomas P. ; Hollaway Roy D.,PHX ; Panczak Anthony E., Method of making integrated circuit package having adhesive bead supporting planar lid above planar substrate.
Johannsen, Ib; Larsen, Niels Bent; Mullenborn, Matthias; Rombach, Pirmin Hermann Otto, Method of providing a hydrophobic layer and a condenser microphone having such a layer.
Johannsen, Ib; Larsen, Niels Bent; Mullenborn, Matthias; Rombach, Pirmin Hermann Otto, Method of providing a hydrophobic layer and condenser microphone having such a layer.
Volant, Richard P.; Angell, David; Canaperi, Donald F.; Kocis, Joseph T.; Petrarca, Kevin S.; Stein, Kenneth J.; Wille, William C., Micro electromechanical switch having self-aligned spacers.
Carney Francis J. ; Carson George Amos ; Celaya Phillip C. ; Fuerhaupter Harry ; Jones Frank Tim ; Klosterman Donald H. ; Melton Cynthia M. ; Knapp James Howard ; Nelson Keith E., Microelectronic package including a polymer encapsulated die.
Carney Francis J. ; Carson George Amos ; Celaya Phillip C. ; Fuerhaupter Harry ; Jones Frank Tim ; Klosterman Donald H. ; Melton Cynthia M. ; Knapp James Howard ; Nelson Keith E., Microelectronic package including a polymer encapsulated die, and method for forming same.
Loeppert, Peter V.; McCall, Ryan M.; Giesecke, Daniel; Vos, Sandra F.; Szczech, John B.; Lee, Sung Bok; Van Kessel, Peter, Microphone assembly with barrier to prevent contaminant infiltration.
Pasqualoni Anthony M. (Hamden CT) Mahulikar Deepak (Madison CT) Jewell Francis S. (Meriden CT) Hoffman Paul R. (Modesto CA) Brathwaite George (Hayward CA) McNabb Richard (Manteca CA) Ramirez German (, Polymer plug for electronic packages.
Giachino Joseph M. (Farmington Hills MI) Haeberle Russell J. (Canton MI) Crow Joseph W. (Livonia MI), Semiconductor variable capacitance pressure transducer assembly.
Guzuk Andrzej T. (Pompano Beach FL) Roshitsh Todd W. (No. Lauderdale FL) Engstrom Scott M. (Coral Springs FL) Bernardoni Lonnie L. (Coral Springs FL), Shielded low-profile electronic component assembly.
Knecht Thomas A. (Crystal Lake IL) Mancini Brian M. (Carol Stream IL) Achille Jean-Robert (Bloomingdale IL) Sieben David J. (Palatine IL), Shielding apparatus for non-conductive electronic circuit packages.
Masato Higuchi JP; Atsushi Hirakawa JP; Shinobu Uesugi JP; Koichi Kanryo JP, Surface acoustic wave device having a package including a conductive cap that is coated with sealing material.
Rector Louis ; Hyatt Hugh M. ; Minervini Anthony ; Swensen Robert ; Neuhalfen Andrew J. ; Elliott Andrew W. S., Surface-mountable device for protection against electrostatic damage to electronic components.
Brown Reed S. (Indianapolis IN) Brzezinski Alex M. (Indianapolis IN) Jue Tinyee (Shreveport LA) Woods ; Jr. William L. (Keithville LA) Zieles Robert S. (Indianapolis IN), Telephone handset construction.
Harris Daryl ; Kaschke Kevin D. ; Bond David L., Telephone set having a microphone for receiving or an earpiece for generating an acoustic signal via a keypad.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.