초록

A method of treating a carbon structure is provided. The method may include infiltrating the carbon structure with a silicon compound preparation, heat treating the carbon structure to form a plurality of silicon carbide whiskers in the carbon structure, and/or densifying the carbon structure.

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1. A method of treating a carbon structure, comprising: applying a stoichiometric adjustment preparation comprising at least one of zirconium oxide or titanium oxide to the carbon structure;drying the carbon structure;infiltrating the carbon structure with a silicon compound preparation;heat treatin

1. A method of treating a carbon structure, comprising: applying a stoichiometric adjustment preparation comprising at least one of zirconium oxide or titanium oxide to the carbon structure;drying the carbon structure;infiltrating the carbon structure with a silicon compound preparation;heat treating the carbon structure to form a plurality of silicon carbide whiskers in the carbon structure, and to form a stoichiometric adjustment coating comprising at least one of zirconium carbide and titanium carbide; anddensifying the carbon structure,wherein the silicon compound preparation comprises silicon nitride, wherein a stoichiometric weight ratio of carbon to silicon nitride within the silicon compound preparation is between 0.15 and 0.26. 2. The method of claim 1, wherein the silicon compound preparation further comprises at least one of silicon monoxide or silicon dioxide. 3. The method of claim 1, wherein the silicon compound preparation comprises at least one of a colloidal suspension or a sol gel. 4. The method of claim 1, further comprising partially densifying the carbon structure by chemical vapor infiltration (CVI) before the infiltrating the carbon structure with the silicon compound preparation. 5. The method of claim 1, further comprising partially densifying the carbon structure by CVI after the infiltrating the carbon structure with the silicon compound preparation, forming a partially densified carbon structure. 6. The method of claim 5, further comprising infiltrating the partially densified carbon structure with the silicon compound preparation. 7. The method of claim 1, further comprising applying a thin pyrolytic carbon layer to the carbon structure before the infiltrating the carbon structure with the silicon compound preparation. 8. The method of claim 1, wherein the silicon compound preparation comprises at least one of a nickel compound, an iron compound, a cobalt compound, and/or a titanium compound. 9. The method of claim 1, wherein the silicon compound preparation comprises a carbon source, the carbon source comprising at least one of carbon black, sucrose, dextrose, maltose, cellulose, polyvinyl butyral, polyethylene glycol, poly polyvinyl alcohol, polyacrylamide, polyvinylpyrrolidone, polyvinyl acetate, polyethyleneimine, polyvinyl butyral, polyacrylate, or a polyester, epoxy, or phenolic resin. 10. The method of claim 1, wherein, after the densifying, the plurality of silicon carbide whiskers comprise, by weight, 5% to 35% of the carbon structure. 11. The method of claim 1, wherein the heat treating the carbon structure to form the plurality of silicon carbide whiskers and the stoichiometric adjustment coating comprises a temperature ranging from 1400° C. to 1850° C. 12. A method of treating a carbon structure, comprising: forming the carbon structure;treating the carbon structure with heat at a first temperature ranging from 1000° C. to 2400° C.;applying a stoichiometric adjustment preparation comprising at least one of zirconium oxide or titanium oxide to the carbon structure;drying the carbon structure;infiltrating the carbon structure with a silicon compound preparation comprising at least one of a colloidal suspension or a sol gel, the silicon compound preparation comprising at least one of silicon nitride, silicon monoxide, or silicon dioxide as a silicon source;treating the carbon structure with heat at a second temperature ranging from 1400° C. to 1850° C. to form a plurality of silicon carbide whiskers, and to form a stoichiometric adjustment coating comprising at least one of zirconium carbide and titanium carbide; anddensifying the carbon structure,wherein the silicon compound preparation comprises silicon nitride, wherein a stoichiometric weight ratio of carbon to silicon nitride within the silicon compound preparation is between 0.15 and 0.26. 13. The method of claim 12, further comprising partially densifying the carbon structure by CVI before the infiltrating the carbon structure with the silicon compound preparation. 14. The method of claim 12, further comprising partially densifying the carbon structure by CVI after the infiltrating the carbon structure with the silicon compound preparation, forming a partially densified carbon structure. 15. The method of claim 14, further comprising infiltrating the partially densified carbon structure with the silicon compound preparation. 16. The method of claim 12, wherein, after the densifying, the plurality of silicon carbide whiskers comprise, by weight, 5% to 35% of the carbon structure. 17. A method of treating a carbon structure, comprising: forming the carbon structure;treating the carbon structure with heat at a first temperature ranging from 1000° C. to 2400° C.;applying a stoichiometric adjustment preparation comprising at least one of zirconium oxide or titanium oxide to the carbon structure;drying the carbon structure;infiltrating the carbon structure with a silicon compound preparation comprising at least one of a silicon colloidal suspension or a sol gel, the silicon compound preparation comprising silicon nitride, wherein a stoichiometric weight ratio of carbon to silicon nitride within the silicon compound preparation is between 0.15 and 0.26;treating the carbon structure with heat at a second temperature ranging from 1400° C. to 1850° C. to form a plurality of silicon carbide whiskers within a plurality of pores in the carbon structure, and to form a stoichiometric adjustment coating comprising at least one of zirconium carbide or titanium carbide; anddensifying the carbon structure by chemical vapor infiltration (CVI). 18. The method of claim 17, wherein, after the densifying, the plurality of silicon carbide whiskers comprise, by weight, 5% to 35% of the carbon structure. 19. The method of claim 17, wherein the silicon compound preparation further comprises at least one of silicon monoxide or silicon dioxide.