UV and reducing treatment for K recovery and surface clean in semiconductor processing
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/67
H01L-021/02
H01L-021/3105
H01L-021/768
출원번호
US-0646830
(2009-12-23)
등록번호
US-10037905
(2018-07-31)
발명자
/ 주소
Varadarajan, Bhadri
Antonelli, George A.
van Schravendijk, Bart
출원인 / 주소
Novellus Systems, Inc.
대리인 / 주소
Weaver Austin Villeneuve & Sampson LLP
인용정보
피인용 횟수 :
0인용 특허 :
176
초록▼
Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue o
Treatment of carbon-containing low-k dielectric with UV radiation and a reducing agent enables process-induced damage repair. Also, treatment with a reducing agent and UV radiation is effective to clean a processed wafer surface by removal of metal oxide (e.g., copper oxide) and/or organic residue of CMP slurry from the planarized surface of a processed wafer with or without low-k dielectric. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metalization, post-planarization, or both, and/or provide effective post-planarization surface cleaning to improve adhesion of subsequently applied dielectric barrier and/or other layers.
대표청구항▼
1. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising conductive features and a dielectric layer having formed therein a feature; andexposing the semiconductor device substrate to a reducing agent and UV radiation, wi
1. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising conductive features and a dielectric layer having formed therein a feature; andexposing the semiconductor device substrate to a reducing agent and UV radiation, without exposing the device substrate to a plasma, wherein the reducing agent is a reducing gas selected from the group consisting of NH3, NH2D, NHD2, ND3, H2, N2H4, and combinations of these with one another and/or inert gases, such that oxide on the conductive features is removed in a UV-mediated plasma-free process including exposure to a non-oxidizing reducing environment, wherein the UV and reducing agent exposure reduces oxide created in a via silicide. 2. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising conductive features and a dielectric layer having formed therein a feature; andexposing the semiconductor device substrate to a reducing agent and UV radiation, without exposing the device substrate to a plasma, wherein the reducing agent is a reducing gas selected from the group consisting of NH3, NH2D, NHD2, ND3, H2, N2H4, and combinations of these with one another and/or inert gases, such that oxide on the conductive features is removed in a UV-mediated plasma-free process including exposure to a non-oxidizing reducing environment, and wherein the reducing agent is NH3 gas, the exposure to the reducing agent is conducted at a temperature of about 400° C. for less than 1 minute, and the UV radiation exposure is conducted in an inert atmosphere. 3. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising conductive features and a dielectric layer having formed therein a feature; andexposing the semiconductor device substrate to a reducing agent and UV radiation, without exposing the device substrate to a plasma, wherein the reducing agent is a reducing gas selected from the group consisting of NH3, NH2D, NHD2, ND3, H2, N2H4, and combinations of these with one another and/or inert gases, such that oxide on the conductive features is removed in a UV-mediated plasma-free process including exposure to a non-oxidizing reducing environment, and wherein the reducing gas is selected from the group consisting of NH2D, NHD2 and ND3. 4. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising conductive features and a dielectric layer having formed therein a feature; andexposing the semiconductor device substrate to a reducing agent and UV radiation, without exposing the device substrate to a plasma, wherein the reducing agent is a reducing gas selected from the group consisting of NH3, NH2D, NHD2, ND3, H2, N2H4, and combinations of these with one another and/or inert gases, such that oxide on the conductive features is removed in a UV-mediated plasma-free process including exposure to a non-oxidizing reducing environment, and wherein the UV-mediated plasma-free process comprises exposing the oxide to hydrogen radicals. 5. A method of forming a semiconductor device, comprising: receiving in a processing chamber a semiconductor device substrate comprising a planarized surface having conductive features in a dielectric layer; andexposing the planarized surface to UV radiation and a reducing agent, without exposing the planarized surface to a plasma, wherein the reducing agent is a reducing gas selected from the group consisting of NH3, NH2D, NHD2, ND3, H2, N2H4,and combinations of these with one another and/or inert gases; whereby oxide on the conductive features is removed in a UV-mediated plasma-free process including exposure to a non-oxidizing reducing environment,wherein the UV-mediated plasma-free process comprises exposing the oxide to hydrogen radicals.
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