최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
---|---|
국제특허분류(IPC7판) |
|
출원번호 | US-0425231 (2017-02-06) |
등록번호 | US-10043684 (2018-08-07) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 6 인용 특허 : 810 |
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an
Systems and methods of etching a semiconductor substrate may include flowing an oxygen-containing precursor into a substrate processing region of a semiconductor processing chamber. The substrate processing region may house the semiconductor substrate, and the semiconductor substrate may include an exposed metal-containing material. The methods may include flowing a nitrogen-containing precursor into the substrate processing region. The methods may further include removing an amount of the metal-containing material.
1. A method of etching a semiconductor substrate, the method comprising: flowing an oxygen-containing precursor into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material, wherein the oxygen-containing pre
1. A method of etching a semiconductor substrate, the method comprising: flowing an oxygen-containing precursor into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material, wherein the oxygen-containing precursor comprises water, ozone, or radical oxygen;flowing a nitrogen-containing precursor into the substrate processing region; andremoving an amount of the metal-containing material. 2. The method of etching a semiconductor substrate of claim 1, wherein the oxygen-containing precursor is configured to react with the metal-containing material to produce a modified metal-containing material. 3. The method of etching a semiconductor substrate of claim 2, wherein the nitrogen-containing precursor is configured to react with the modified metal-containing material to produce a volatile complex. 4. The method of etching a semiconductor substrate of claim 1, wherein the nitrogen-containing precursor comprises an amine. 5. The method of etching a semiconductor substrate of claim 4, wherein the amine comprises diethylamine, propylamine, or N-ethylmethylamine. 6. The method of etching a semiconductor substrate of claim 1, wherein the oxygen-containing precursor and the nitrogen-containing precursor are flowed sequentially into the substrate processing region. 7. The method of etching a semiconductor substrate of claim 6, further comprising holding for a first period of time subsequent flowing the oxygen-containing precursor and prior to flowing the nitrogen-containing precursor. 8. The method of etching a semiconductor substrate of claim 7, wherein the first period of time is between about 5 seconds and about 30 seconds. 9. The method of etching a semiconductor substrate of claim 6, further comprising holding for a second period of time subsequent flowing the nitrogen-containing precursor. 10. The method of etching a semiconductor substrate of claim 9, wherein the second period of time is between about 10 seconds and about 60 seconds. 11. The method of etching a semiconductor substrate of claim 1, wherein the oxygen-containing precursor comprises water or ozone and the nitrogen-containing precursor is halogen free, and wherein the method comprises a plasma-free process. 12. The method of etching a semiconductor substrate of claim 1, wherein the method is performed at a temperature of between about 100° C. and about 225° C. 13. The method of etching a semiconductor substrate of claim 1, wherein flowing the oxygen-containing precursor and flowing the nitrogen-containing precursor are repeated in at least one additional cycle. 14. The method of etching a semiconductor substrate of claim 1, wherein the metal-containing material comprises titanium nitride. 15. A method of etching a semiconductor substrate, the method comprising: forming plasma effluents of an oxygen-containing precursor in a remote plasma region of a semiconductor processing chamber;flowing the plasma effluents into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material, wherein the substrate processing region is fluidly coupled with the remote plasma region, and wherein the oxygen-containing precursor is configured to react with the metal-containing material to produce a modified metal-containing material;holding for a first period of time greater than or about 1 second;flowing a nitrogen-containing precursor into the substrate processing region, wherein the nitrogen-containing precursor is configured to react with the modified metal-containing material to produce a volatile complex;holding for a second period of time greater than or about 1 second; andremoving an amount of the metal-containing material. 16. The method of etching a semiconductor substrate of claim 15, further comprising flowing additional nitrogen-containing precursor into the substrate processing region. 17. The method of etching a semiconductor substrate of claim 15, wherein the method removes at least about 0.2 Å per cycle of flowing the plasma effluents and flowing the nitrogen-containing precursor into the substrate processing region. 18. The method of etching a semiconductor substrate of claim 15, wherein the nitrogen-containing precursor is selected from the group of precursors consisting of a water-methylamine solution, a water-ethylamine solution, diethylamine, propylamine, dipropylamine, a water-diethylamine solution, and N-ethylmethylamine. 19. The method of etching a semiconductor substrate of claim 15, wherein the plasma effluents are produced at a plasma power below or about 500 W. 20. A method of etching a semiconductor substrate, the method comprising: flowing an oxygen-containing precursor into a substrate processing region housing the semiconductor substrate, wherein the semiconductor substrate includes an exposed metal-containing material;flowing a nitrogen-containing precursor into the substrate processing region; andremoving an amount of the metal-containing material, wherein the oxygen-containing precursor and the nitrogen-containing precursor are halogen free, and wherein the method comprises a plasma-free process.
Copyright KISTI. All Rights Reserved.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.