[미국특허]
Targets and processes for fabricating same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H05H-001/24
H05G-002/00
출원번호
US-0142628
(2016-04-29)
등록번호
US-10051719
(2018-08-14)
발명자
/ 주소
Adams, Jesse D.
Korgan, Grant
Malekos, Steven
Renard-Le Galloudec, Nathalie
Sentoku, Yasuhiko
Cowan, Thomas E.
출원인 / 주소
Board of Regents of the Nevada System of Higher Education, on Behalf of the University of Nevada, Reno
대리인 / 주소
Klarquist Sparkman, LLP
인용정보
피인용 횟수 :
0인용 특허 :
26
초록▼
In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the
In particular embodiments, the present disclosure provides targets including a metal layer and defining a hollow inner surface. The hollow inner surface has an internal apex. The distance between at least two opposing points of the internal apex is less than about 15 μm. In particular examples, the distance is less than about 1 μm. Particular implementations of the targets are free standing. The targets have a number of disclosed shaped, including cones, pyramids, hemispheres, and capped structures. The present disclosure also provides arrays of such targets. Also provided are methods of forming targets, such as the disclosed targets, using lithographic techniques, such as photolithographic techniques. In particular examples, a target mold is formed from a silicon wafer and then one or more sides of the mold are coated with a target material, such as one or more metals.
대표청구항▼
1. A structure for facilitating proton generation, the structure comprising: a substrate having a front side and a back side;a first aperture located in the front side of the substrate;a second aperture located in the back side of the substrate; anda laser target located in the first and second aper
1. A structure for facilitating proton generation, the structure comprising: a substrate having a front side and a back side;a first aperture located in the front side of the substrate;a second aperture located in the back side of the substrate; anda laser target located in the first and second apertures, the laser target configured to emit protons when irradiated by an irradiating laser;wherein the laser target has a convex tip and a concave opening, the concave opening complementary to the convex tip; andwherein a trough of the concave opening has a lateral dimension approximately equal to a characteristic wavelength of the irradiating laser. 2. The structure of claim 1, wherein the substrate comprises at least one of: a semiconductor material and an insulator material. 3. The structure of claim 1, wherein the lateral dimension of the trough of the concave opening is less than 10 μm. 4. The structure of claim 3, wherein the lateral dimension of the trough of the concave opening is less than 1 μm. 5. The structure of claim 1, wherein a mouth of the concave opening has a lateral size approximately equal to a spot size of the irradiating laser. 6. The structure of claim 1, wherein the laser target comprises at least one of Au, Pt, Cr, Cu, Pd, Ta, Ag, Ti, W, silicon nitride, a polymer, and polysilicon. 7. The structure of claim 1, wherein the laser target is formed by at least one process selected from the group consisting of chemical vapor deposition, evaporation, spin coating, and electroplating. 8. The structure of claim 1 comprising a plurality of the laser targets. 9. The structure of claim 8, wherein the laser targets are arranged in an array. 10. The structure of claim 8, wherein the laser targets are operatively coupled to one another. 11. The structure of claim 1, wherein the laser target is circumscribed by a protective frame. 12. The structure of claim 11, wherein the protective frame is configured to facilitate manipulation of the laser target relative to the irradiating laser. 13. The structure of claim 1, wherein the laser target comprises a cap coupled to an apex of the convex tip. 14. The structure of claim 13, wherein the cap is substantially planar and orthogonal to the apex of the convex tip. 15. The structure of claim 1, wherein the convex tip is located within the first aperture, and wherein the concave opening is located within the second aperture. 16. The structure of claim 1, wherein the convex tip is located within the second aperture, and wherein the concave opening is located within the first aperture. 17. The structure of claim 1, wherein the concave opening is defined by a conic void. 18. The structure of claim 17, wherein the conic void is a pyramidal void. 19. The structure of claim 1, wherein the laser target comprises a first material and a second material, the first material differing from the second material. 20. The structure of claim 19, wherein at least one of the first material and second material comprises a metal. 21. The structure of claim 1, wherein the convex tip and the trough of the concave opening are both substantially hemispherical.
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