Sputtering target and manufacturing method thereof, and transistor
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01J-037/34
C04B-035/01
C04B-035/453
C04B-035/645
C04B-041/00
C04B-041/80
C23C-014/10
C23C-014/34
C23C-014/56
H01L-021/02
H01L-029/417
H01L-029/423
H01L-029/45
H01L-029/786
B29C-031/00
H01L-029/66
C04B-111/00
출원번호
US-0578603
(2014-12-22)
등록번호
US-10083823
(2018-09-25)
우선권정보
JP-2009-260224 (2009-11-13)
발명자
/ 주소
Yamazaki, Shunpei
Takayama, Toru
Sato, Keiji
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Fish & Richardson P.C.
인용정보
피인용 횟수 :
0인용 특허 :
48
초록▼
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide s
One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.
대표청구항▼
1. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×1016 atoms/cm3. 2. The sputter
1. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×1016 atoms/cm3. 2. The sputtering target according to claim 1, wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide. 3. The sputtering target according to claim 1, further comprising a silicon oxide, wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive. 4. The sputtering target according to claim 1, wherein the sputtering target has a filling rate of 95% to 99.9% inclusive. 5. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein a concentration of hydrogen atoms contained in the sintered body is 5 ×1017 atoms/cm3 or less. 6. The sputtering target according to claim 5, wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide. 7. The sputtering target according to claim 5, further comprising a silicon oxide, wherein the silicon oxide is added to the sputtering target at 0.1 wt % to 20 wt % inclusive. 8. The sputtering target according to claim 5, wherein the sputtering target has a filling rate of 95% to 99.9% inclusive.
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