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특허 상세정보

Sputtering target and manufacturing method thereof, and transistor

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01J-037/34    C04B-035/01    C04B-035/453    C04B-035/645    C04B-041/00    C04B-041/80    C23C-014/10    C23C-014/34    C23C-014/56    H01L-021/02    H01L-029/417    H01L-029/423    H01L-029/45    H01L-029/786    B29C-031/00    H01L-029/66    C04B-111/00   
출원번호 US-0578603 (2014-12-22)
등록번호 US-10083823 (2018-09-25)
우선권정보 JP-2009-260224 (2009-11-13)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 48
초록

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

대표
청구항

1. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×1016 atoms/cm3. 2. The sputtering target according to claim 1, wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide. 3. The sputtering target according to claim 1, further comprising a silicon oxide, wherein the silicon oxide is added to the sputterin...

이 특허에 인용된 특허 (48)

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