$\require{mediawiki-texvc}$
  • 검색어에 아래의 연산자를 사용하시면 더 정확한 검색결과를 얻을 수 있습니다.
  • 검색연산자
검색도움말
검색연산자 기능 검색시 예
() 우선순위가 가장 높은 연산자 예1) (나노 (기계 | machine))
공백 두 개의 검색어(식)을 모두 포함하고 있는 문서 검색 예1) (나노 기계)
예2) 나노 장영실
| 두 개의 검색어(식) 중 하나 이상 포함하고 있는 문서 검색 예1) (줄기세포 | 면역)
예2) 줄기세포 | 장영실
! NOT 이후에 있는 검색어가 포함된 문서는 제외 예1) (황금 !백금)
예2) !image
* 검색어의 *란에 0개 이상의 임의의 문자가 포함된 문서 검색 예) semi*
"" 따옴표 내의 구문과 완전히 일치하는 문서만 검색 예) "Transform and Quantization"

통합검색

도움말도움말
상세검색 다국어 입력

연합인증

연합인증 가입 기관의 연구자들은 소속기관의 인증정보(ID와 암호)를 이용해 다른 대학, 연구기관, 서비스 공급자의 다양한 온라인 자원과 연구 데이터를 이용할 수 있습니다.

이는 여행자가 자국에서 발행 받은 여권으로 세계 각국을 자유롭게 여행할 수 있는 것과 같습니다.

연합인증으로 이용이 가능한 서비스는 NTIS, DataON, Edison, Kafe, Webinar 등이 있습니다.

한번의 인증절차만으로 연합인증 가입 서비스에 추가 로그인 없이 이용이 가능합니다.

다만, 연합인증을 위해서는 최초 1회만 인증 절차가 필요합니다. (회원이 아닐 경우 회원 가입이 필요합니다.)

연합인증 절차는 다음과 같습니다.

최초이용시에는
ScienceON에 로그인 → 연합인증 서비스 접속 → 로그인 (본인 확인 또는 회원가입) → 서비스 이용

그 이후에는
ScienceON 로그인 → 연합인증 서비스 접속 → 서비스 이용

연합인증을 활용하시면 KISTI가 제공하는 다양한 서비스를 편리하게 이용하실 수 있습니다.

특허 상세정보

MyON담기
내보내기 페이스북 공유 카카오톡 공유

Sputtering target and manufacturing method thereof, and transistor

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01J-037/34    C04B-035/01    C04B-035/453    C04B-035/645    C04B-041/00    C04B-041/80    C23C-014/10    C23C-014/34    C23C-014/56    H01L-021/02    H01L-029/417    H01L-029/423    H01L-029/45    H01L-029/786    B29C-031/00    H01L-029/66    C04B-111/00   
출원번호 US-0578603 (2014-12-22)
등록번호 US-10083823 (2018-09-25)
우선권정보 JP-2009-260224 (2009-11-13)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Fish & Richardson P.C.
인용정보 피인용 횟수 : 0  인용 특허 : 48
초록

One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

대표
청구항
▼

1. A sputtering target comprising: a sintered body of at least one metal oxide selected from magnesium oxide, zinc oxide, aluminum oxide, gallium oxide, indium oxide, and tin oxide,wherein a concentration of hydrogen atoms contained in the sintered body is lower than 1×1016 atoms/cm3. 2. The sputtering target according to claim 1, wherein the sintered body is a sintered body of indium oxide, gallium oxide, and zinc oxide. 3. The sputtering target according to claim 1, further comprising a silicon oxide, wherein the silicon oxide is added to the sputterin...

이 특허에 인용된 특허 (48)

  1. Itagaki, Naho; Goyal, Amita; Iwasaki, Tatsuya. Amorphous oxide and field effect transistor. USP2012078212248.
  2. Itagaki, Naho; Iwasaki, Tatsuya. Amorphous oxide and field effect transistor. USP2012058188467.
  3. Inoue, Kazuyoshi. Amorphous transparent conductive film, sputtering target as its raw material, amorphous transparent electrode substrate, process for producing the same and color filter for liquid crystal display. USP2011037897067.
  4. Hoffman,Randy L.; Mardilovich,Peter P.; Herman,Gregory S.. Combined binary oxide semiconductor device. USP2007107282782.
  5. Iwasaki, Tatsuya. Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film. USP2010097791074.
  6. Iwasaki, Tatsuya. Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film. USP2012048154024.
  7. Iwasaki, Tatsuya. Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film. USP2011057935582.
  8. Iwasaki, Tatsuya. Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film. USP2011067956361.
  9. Yano, Koki; Kawashima, Hirokazu; Inoue, Kazuyoshi; Tomai, Shigekazu; Kasami, Masashi. Field effect transistor using oxide semiconductor and method for manufacturing the same. USP2015038981369.
  10. Yano, Koki; Kawashima, Hirokazu; Inoue, Kazuyoshi; Tomai, Shigekazu; Kasami, Masashi. Field effect transistor using oxide semicondutor and method for manufacturing the same. USP2013028384077.
  11. Endo,Ayanori; Hayashi,Ryo; Iwasaki,Tatsuya. Field-effect transistor and method for manufacturing the same. USP2008087411209.
  12. Nause,Jeff; Ganesan,Shanthi. High-electron mobility transistor with zinc oxide. USP2006097105868.
  13. Bedinger, John M.; Fuller, Clyde R.. Hydrogen gettering system. USP2005106958260.
  14. Bedinger, John M.; Fuller, Clyde R.. Hydrogen gettering system. USP2004016673400.
  15. Shih,Yi Chi; Qiu,Cindy Xing; Shih,Ishiang; Qiu,Chunong. Indium oxide-based thin film transistors and circuits. USP2007057211825.
  16. Ishigami Takashi,JPX ; Watanabe Koichi,JPX ; Nitta Akihisa,JPX ; Maki Toshihiro,JPX ; Yagi Noriaki,JPX. Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same. USP2001126329275.
  17. Ishigami, Takashi; Watanabe, Koichi; Nitta, Akihisa; Maki, Toshihiro; Yagi, Noriaki. Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same. USP201011RE41975.
  18. Takahashi, Ken; Konno, Taichiroo; Arai, Masahiro. Light emitting diode. USP2010017652281.
  19. Kimura, Hajime. Liquid crystal display device and electronic device. USP2011017872722.
  20. Hosono,Hideo; Hirano,Masahiro; Ota,Hiromichi; Orita,Masahiro; Hiramatsu,Hidenori; Ueda,Kazushige. LnCuO(S,Se,Te)monocrystalline thin film, its manufacturing method, and optical device or electronic device using the monocrystalline thin film. USP2008017323356.
  21. Takeda,Katsutoshi; Isomura,Masao. Method for forming ZnO film, method for forming ZnO semiconductor layer, method for fabricating semiconductor device, and semiconductor device. USP2006057049190.
  22. Hanawa, Kenzo; Sasaki, Yasumasa; Miki, Hisayuki. Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp. USP2012018097482.
  23. Kokubo,Chiho; Yamazaki,Shunpei; Takano,Tamae; Irie,Hiroaki. Method for manufacturing semiconductor device. USP2008127459379.
  24. Kaji,Nobuyuki; Yabuta,Hisato. Method of fabricating oxide semiconductor device. USP2008127468304.
  25. den Boer Willem (Troy MI) Gu Tieer (Troy MI). Method of making a TFT with reduced channel length for LCDs. USP1997085661050.
  26. Koyanagi Ken-Ichi,JPX ; Kishimoto Koji,JPX. Method of manufacturing semiconductor devices having multi-level wiring structure. USP2000036037278.
  27. Kim Dong-Gyu,KRX ; Lee Won-Hee,KRX. Methods for forming liquid crystal displays including thin film transistors and gate pads having a particular structure. USP1998035731856.
  28. Levy,David H.; Scuderi,Andrea C.; Irving,Lyn M.. Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby. USP2008077402506.
  29. Hosono,Hideo; Ota,Hiromichi; Orita,Masahiro; Ueda,Kazushige; Hirano,Masahiro; Kamiya,Toshio. Natural-superlattice homologous single crystal thin film, method for preparation thereof, and device using said single crystal thin film. USP2006067061014.
  30. Sawa, Akihito; Fujii, Takeshi; Kawasaki, Masashi; Tokura, Yoshinori. Nonvolatile memory element. USP2009087580276.
  31. Kawazoe Hiroshi,JPX ; Hosono Hideo,JPX ; Kudo Atsushi,JPX ; Yanagi Hiroshi,JPX. Oxide thin film. USP2001096294274.
  32. Hoffman,Randy L.; Herman,Gregory S.; Mardilovich,Peter P.. Semiconductor device. USP2007117297977.
  33. Akimoto, Kengo; Honda, Tatsuya; Sone, Norihito. Semiconductor device and manufacturing method thereof. USP2010067732819.
  34. Akimoto, Kengo; Honda, Tatsuya; Sone, Norihito. Semiconductor device and manufacturing method thereof. USP2010037674650.
  35. Cillessen Johannes F. M.,NLX ; Blom Paulus W. M.,NLX ; Wolf Ronald M. ; Giesbers Jacobus B.,NLX. Semiconductor device having a transparent switching element. USP1998045744864.
  36. Ito,Yoshihiro; Kadota,Michio. Semiconductor device in which zinc oxide is used as a semiconductor material and method for manufacturing the semiconductor device. USP2009037501293.
  37. Saito,Keishi; Hosono,Hideo; Kamiya,Toshio; Nomura,Kenji. Sensor and image pickup device. USP2008117453065.
  38. Hunt Thomas J. ; Gilman Paul S.. Sputter target/backing plate assembly and method of making same. USP1998115836506.
  39. Yamazaki, Shunpei; Takayama, Toru; Sato, Keiji. Sputtering target and manufacturing method thereof, and transistor. USP2013078492862.
  40. Gu Tieer ; Boer Willem den. TFT with reduced channel length and parasitic capacitance. USP1999025872370.
  41. Kawasaki, Masashi; Ohno, Hideo; Kobayashi, Kazuki; Sakono, Ikuo. Thin film transistor and matrix display device. USP2003056563174.
  42. Ishii,Hiromitsu; Hokari,Hitoshi; Yoshida,Motohiko; Yamaguchi,Ikuhiro. Thin film transistor having an etching protection film and manufacturing method thereof. USP2008067385224.
  43. Furuta, Mamoru; Hirao, Takashi; Furuta, Hiroshi; Matsuda, Tokiyoshi; Hiramatsu, Takahiro; Ishii, Hiromitsu; Hokari, Hitoshi; Yoshida, Motohiko. Thin film transistor including low resistance conductive thin films and manufacturing method thereof. USP2009087576394.
  44. Iwasaki,Tatsuya. Thin-film transistor and thin-film diode having amorphous-oxide semiconductor layer. USP2008117453087.
  45. Kawasaki, Masashi; Ohno, Hideo. Transistor and semiconductor device. USP2004046727522.
  46. Kawasaki,Masashi; Ohno,Hideo. Transistor and semiconductor device. USP2006067064346.
  47. Hoffman,Randy L.; Herman,Gregory S.. Transistor using an isovalent semiconductor oxide as the active channel layer. USP2008127462862.
  48. Park, Seong Ju; Oh, Min Suk; Hwang, Dae Kyu; Kwon, Min Ki. Zinc oxide semiconductor and method of manufacturing the same. USP2010117842539.

IPC 상위 출원인