초록 ▼

A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin

A thin film resistor includes 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of dysprosium. The thin film resistor can greatly increase the resistivity with a low temperature coefficient of resistance to broaden the applications of the thin film resistor.

대표청구항 ▼

1. A thin film resistor comprising 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of at least one of lanthanide elements. 2. The thin film resistor as claimed in claim 1, wherein the thin film resistor comprises 40.4-58.5 at.% of nickel, 12.

1. A thin film resistor comprising 38-60 at.% of nickel, 10-25 at.% of chromium, 3-10 at.% of manganese, 4-18 at.% of yttrium, and 1-36 at.% of at least one of lanthanide elements. 2. The thin film resistor as claimed in claim 1, wherein the thin film resistor comprises 40.4-58.5 at.% of nickel, 12.5-21.6 at.% of chromium, 5.2-7.8 at.% of manganese, 6.1-15.5 at.% of yttrium, and 3.7-33.1 at.% of at least one of the lanthanide elements. 3. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 58.5 at.% of nickel, 21.6 at.% of chromium, 7.5 at.% of manganese, 8.7 at.% of yttrium, and 3.7 at.% of dysprosium. 4. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 44.6 at.% of nickel, 16.2 at.% of chromium, 5.2 at.% of manganese, 15.5 at.% of yttrium, and 18.5 at.% of dysprosium. 5. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 42.9 at.% of nickel, 15.2 at.% of chromium, 6.2 at.% of manganese, 9.5 at.% of yttrium, and 26.2 at.% of dysprosium. 6. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 41.0 at.% of nickel, 14.3 at.% of chromium, 5.5 at.% of manganese, 6.1 at.% of yttrium, and 33.1 at.% of dysprosium. 7. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 54.8 at.% of nickel, 19.4 at.% of chromium, 7.8 at.% of manganese, 12.9 at.% of yttrium, and 5.1 at.% of terbium. 8. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 46.6 at.% of nickel, 16.9 at.% of chromium, 8.3 at.% of manganese, 10.1 at.% of yttrium, and 18.1 at.% of terbium. 9. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 42.9 at.% of nickel, 15.1 at.% of chromium, 6.1 at.% of manganese, 10.8 at.% of yttrium, and 25.1 at.% of terbium. 10. The thin film resistor as claimed in claim 2, wherein the thin film resistor comprises 40.4 at.% of nickel, 12.5 at.% of chromium, 5.4 at.% of manganese, 9.2 at.% of yttrium, and 32.5 at.% of terbium.