A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer inc
A semiconductor light emitting device including a first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer; an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure; at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; and at least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer.
대표청구항▼
1. A semiconductor light emitting device, comprising: a first conductivity-type semiconductor layer;a second conductivity-type semiconductor layer;an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer
1. A semiconductor light emitting device, comprising: a first conductivity-type semiconductor layer;a second conductivity-type semiconductor layer;an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one quantum well layer and at least one quantum barrier layer that are alternately stacked and form a multiple quantum well structure;at least one border layer in contact with the first conductivity-type semiconductor layer and interposed between the first conductivity-type semiconductor layer and the active layer, the at least one border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer; andat least one growth blocking layer interposed between the active layer and the border layer, the at least one growth blocking layer having a band gap energy equal to a band gap energy of the at least one quantum barrier layer,wherein:the at least one border layer includes an area which n-type impurity is doped and an other area which n-type impurity is undoped, andthe other area is in contact with the at least one growth blocking layer. 2. The semiconductor light emitting device as claimed in claim 1, wherein the at least one growth blocking layer includes AlxGa1-xN, in which 0≤x<1. 3. The semiconductor light emitting device as claimed in claim 1, wherein a thickness of the at least one growth blocking layer is in a range of 0.5nm to 2.0nm. 4. The semiconductor light emitting device as claimed in claim 1, wherein: the at least one border layer and the at least one growth blocking layer are formed as a plurality of border layers and a plurality of growth blocking layers, respectively, andat least one growth blocking layer of the plurality of growth blocking layers is interposed between two border layers of the plurality of border layers. 5. The semiconductor light emitting device as claimed in claim 1, wherein the at least one border layer includes AlxInyGa1-x-yN, in which 0≤x≤0.1 and 0.01≤y≤0.1. 6. The semiconductor light emitting device as claimed in claim 1, wherein: the at least one border layer includes a dopant, andthe dopant is an element that is the same as an element included in the quantum well layer. 7. The semiconductor light emitting device as claimed in claim 6, wherein a concentration of the dopant in the at least one border layer is lower than a concentration of the same element included in the quantum well layer. 8. The semiconductor light emitting device as claimed in claim 7, wherein the concentration of the dopant gradually changes in the border layer. 9. The semiconductor light emitting device as claimed in claim 7, wherein the concentration of the dopant discontinuously changes in the border layer. 10. The semiconductor light emitting device as claimed in claim 6, wherein the dopant includes indium (In). 11. The semiconductor light emitting device as claimed in claim 1, wherein the at least one border layer further includes an n-type impurity. 12. The semiconductor light emitting device as claimed in claim 11, wherein: the n-type impurity includes (Si), anda concentration of Si in the at least one border layer is in a range of 7×1017/cm3 to 1018/cm3. 13. A semiconductor light emitting device, comprising: a substrate;a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer, stacked on the substrate;a border layer interposed between the first conductivity-type semiconductor layer and the active layer, the border layer having a band gap energy that decreases in a direction away from the first conductivity-type semiconductor layer and including AlxInyGa1-x-yN, in which 0≤x≤0.1 and 0.01≤y≤0.1; anda growth blocking layer interposed between the border layer and the active layer and including AlxGa1-xN, in which 0≤x<1,wherein:the active layer has a structure in which a plurality of quantum barrier layers and a plurality of quantum well layers are alternately stacked, andthe growth blocking layer is thinner than the quantum barrier layers. 14. The semiconductor light emitting device as claimed in claim 13, wherein: a band gap energy of the growth blocking layer is equal to a band gap energy of the quantum barrier layers. 15. A semiconductor light emitting device, comprising: a first conductivity-type semiconductor layer;a second conductivity-type semiconductor layer;an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, the active layer including at least one indium-containing quantum well layer and at least one quantum barrier layer that are alternately stacked;an indium-containing border layer in contact with the first conductivity-type semiconductor layer; anda GaN-containing growth blocking layer contacting the active layer and the border layer,wherein:the border layer includes an area which n-type impurity is doped and an other area which n-type impurity is undoped, andthe other area is in contact with the growth blocking layer. 16. The semiconductor light emitting device as claimed in claim 15, wherein the growth blocking layer has a band gap energy equal to a band gap energy of the at least one quantum barrier layer. 17. The semiconductor light emitting device as claimed in claim 15, wherein the border layer has a band gap energy that decreases in a direction from the first conductivity-type semiconductor layer toward the active layer. 18. The semiconductor light emitting device as claimed in claim 15, wherein: the growth blocking layer includes AlxGa1-xN, in which 0≤x<1, andthe border layer includes AlxInyGa1-x-yN, in which 0≤x≤0.1 and 0.01≤y≤0.1. 19. The semiconductor light emitting device as claimed in claim 15, wherein a thickness of the growth blocking layer is in a range of 0.5 nm to 2.0 nm.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device and liquid crystal display device produced by the same.
Shimoda, Tatsuya; Inoue, Satoshi; Miyazawa, Wakao, Exfoliating method, transferring method of thin film device, and thin film device, thin film integrated circuit device, and liquid crystal display device produced by the same.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Kim, YuSik, Light emitting device, light emitting system having the same, and fabricating method of the light emitting device and the light emitting system.
Han, Kyung Taeg; Yeo, In Tae; Hahm, Hun Joo; Song, Chang Ho; Han, Seong Yeon; Na, Yoon Sung; Kim, Dae Yeon; Ahn, Ho Sik; Park, Young Sam, Light emitting diode package and fabrication method thereof.
Han, Seong Yeon; Lee, Seon Goo; Song, Chang Ho; Park, Jung Kyu; Park, Young Sam; Han, Kyung Taeg, Light emitting diode package with diffuser and method of manufacturing the same.
Kim, Yu-Sik, Light-emitting element capable of increasing amount of light emitted, light-emitting device including the same, and method of manufacturing light-emitting element and light-emitting device.
Okuyama,Hiroyuki; Biwa,Goshi; Suzuki,Jun, Semiconductor light emitting device integral type semiconductor light emitting unit image display unit and illuminating unit.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Choi, Pun Jae; Lee, Jin Hyun; Park, Ki Yeol; Cho, Myong Soo, Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same.
Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
Yoo, Chul Hee; Jeong, Young June; Park, Young Sam; Han, Seong Yeon; Kim, Ho Yeon; Hahm, Hun Joo; Kim, Hyung Suk, White light emitting device and white light source module using the same.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.