Method to suppress period doubling during manufacture of micro and nano scale wrinkled structures
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B29C-059/18
B29C-059/02
B29K-083/00
B29L-031/00
출원번호
US-0012855
(2016-02-02)
등록번호
US-10144172
(2018-12-04)
발명자
/ 주소
Saha, Sourabh Kumar
출원인 / 주소
Saha, Sourabh Kumar
인용정보
피인용 횟수 :
0인용 특허 :
7
초록▼
The range of stretch-tunability of sinusoidal wrinkled surfaces that are obtained by compression of supported thin films is limited by the emergence of a period-doubled mode at high compressive strains. This disclosure presents a method to suppress the emergence of the period-doubled mode at high st
The range of stretch-tunability of sinusoidal wrinkled surfaces that are obtained by compression of supported thin films is limited by the emergence of a period-doubled mode at high compressive strains. This disclosure presents a method to suppress the emergence of the period-doubled mode at high strains. This is achieved by compressing pre-patterned supported thin films, wherein the pre-patterns are substantially similar to the natural pattern of the supported thin film system. As compared to flat thin film systems, pre-patterned thin film systems exhibit period doubling behavior at a higher compressive strain. The onset strain for emergence of period-doubling is tuned by altering the amplitude of the pre-patterns.
대표청구항▼
1. A method of suppressing a phenomenon of period doubling at high strains during wrinkling of bilayers, comprising the steps of: providing a topographically patterned surface, wherein the topographic pattern is a sinusoidal periodic pattern and has a period that is substantially similar to the natu
1. A method of suppressing a phenomenon of period doubling at high strains during wrinkling of bilayers, comprising the steps of: providing a topographically patterned surface, wherein the topographic pattern is a sinusoidal periodic pattern and has a period that is substantially similar to the natural period of the bilayer;replicating the patterned surface onto a base substrate, thereby forming a non-flat pre-patterned surface on the base;stretching the pre-patterned base substrate beyond the nominal period doubling onset strain, thereby forming a stretched and pre-patterned base layer;generating a thin film on top of the stretched pre-patterned base layer, wherein the film conforms to the pre-patterned surface, thereby forming a composite pre-patterned material comprising a thin film on top of a stretched and pre-patterned base layer;releasing the strain in the stretched pre-patterned base layer of the composite material, wherein releasing the strain by an amount smaller than or larger than the nominal period doubling onset strain leads to an increase in an amplitude of the pre-patterns without emergence of a period doubled mode, thereby suppressing the phenomenon of period doubling at high strains during wrinkling. 2. The method of claim 1, wherein the base layer is stretched along a single axis. 3. The method of claim 1, wherein the direction of periodicity of the topographical periodic pattern is aligned along the direction of stretch in the base layer. 4. The method of claim 1, wherein the topographical periodic pattern is formed by the process of wrinkling of flat films, comprising the steps of: providing a flat non-patterned base substrate;stretching the base substrate, thereby forming a stretched base layer;generating a thin film on top of the stretched base layer, thereby forming a composite material comprising a thin film on top of a stretched base layer;releasing the stretch in the stretched base layer of the composite material; andwherein releasing the stretch causes the thin film to buckle, thereby forming a periodic wrinkled surface. 5. The method of claim 1, wherein the topographical periodic pattern is formed by the process of wrinkling of non-flat films, comprising the steps of: providing a non-flat pre-patterned base substrate;stretching the base substrate, thereby forming a stretched and pre-patterned base layer;generating a thin film on top of the stretched and pre-patterned base layer, wherein the film conforms to the pre-patterned surface, thereby forming a composite pre-patterned material comprising a thin film on top of a stretched and pre-patterned base layer;releasing the stretch in the stretched and pre-patterned base layer of the composite material; andwherein releasing the stretch causes the thin film to buckle, thereby forming a periodic wrinkled surface. 6. Method of claim 1, wherein the patterned surface is replicated onto the base substrate by the process of delayed and aligned imprinting, comprising the steps of: providing a coupon with the patterned surface, wherein the coupon has alignment features;providing a thermally curing base material, wherein the base material undergoes a liquid-to-solid phase transition during curing;providing a mold for curing the base material, wherein the mold surface has alignment features that correspond to the direction of stretch that will be applied after curing;heating the base material to a temperature below a threshold value to initiate the first thermal curing cycle, wherein the viscosity of the base material increases with time but the base material does not undergo a liquid-to-solid phase transition by the end of the cycle;aligning the coupon with the patterned surface by locating the alignment features on the coupon with respect to the alignment features on the mold, wherein the patterned surface is not yet in contact with the base material;placing the coupon with the patterned surface on top of the base material before the end of the first thermal curing cycle;further heating the base material to a temperature below a threshold value to initiate the second thermal curing cycle, wherein the base material undergoes a liquid-to-solid phase transition;separating the coupon with the patterned surface from the base material after the onset of phase transition, thereby replicating the patterned surface onto the base material and generating a pre-patterned base substrate. 7. Method of claim 1, wherein the base material is polydimethylsiloxane. 8. Method of claim 1, wherein the thin film is metallic. 9. Method of claim 1, wherein the thin film is polymeric. 10. Method of claim 1, wherein the thin film is generated on top of the pre-patterned base layer by exposing the base layer to plasma. 11. Method of claim 1, wherein the thin film is generated on top of the pre-patterned base layer by depositing the material via vapor deposition process. 12. Method of claim 1, wherein the period of the pre-pattern is identical to the natural period of the composite pre-patterned material. 13. Method of claim 1, wherein the strain in the pre-patterned base layer lies in the range of 18% to 30%. 14. A method of suppressing a phenomenon of period doubling at high strains during wrinkling of bilayers, comprising the steps of: providing a topographically patterned surface, wherein the topographic pattern is a sinusoidal periodic pattern and has a period that is substantially similar to the natural period of the bilayer;replicating the patterned surface onto a base substrate, thereby forming a non-flat pre-patterned surface on the base;stretching the pre-patterned base substrate along two different directions, wherein one stretch direction is aligned along a direction of periodicity of the pre-patterned surface, and wherein the strain along this aligned direction is higher than the nominal period doubling onset strain, thereby forming a stretched and pre-patterned base layer;generating a thin film on top of the stretched pre-patterned base layer, wherein the film conforms to the pre-patterned surface, thereby forming a composite pre-patterned material comprising a thin film on top of a stretched and pre-patterned base layer;releasing the strain along the aligned direction, wherein releasing the strain leads to an increase in an amplitude of the pre-patterns without emergence of a period doubled mode, thereby forming a high aspect ratio wrinkled surface with the same period as that of the pre-pattern;subsequently releasing the strain along the second direction, wherein releasing the strain leads to the thin film to buckle along the second direction, thereby forming a high aspect ratio biaxially wrinkled surface. 15. Method of claim 14, wherein the period of the pre-pattern is identical to the natural period of the composite pre-patterned material. 16. Method of claim 14, wherein the strain in the pre-patterned base layer along the aligned direction lies in the range of 18% to 30%. 17. A method of suppressing a phenomenon of period doubling at high strains during wrinkling of bilayers, comprising the steps of: providing a topographically patterned surface, wherein the topographic pattern is a sinusoidal periodic pattern and has a period that is substantially similar to the natural period of the bilayer;replicating the patterned surface onto a base substrate, thereby forming a non-flat pre-patterned surface on the base;stretching the pre-patterned base substrate along two different directions, wherein one stretch direction is aligned along a direction of periodicity of the pre-patterned surface, and wherein the strain along this aligned direction is higher than the nominal period doubling onset strain, thereby forming a stretched and pre-patterned base layer;generating a thin film on top of the stretched pre-patterned base layer, wherein the film conforms to the pre-patterned surface, thereby forming a composite pre-patterned material comprising a thin film on top of a stretched and pre-patterned base layer;simultaneously releasing the strain along both the directions, wherein releasing the strain leads to the thin film to buckle along both the directions, and wherein releasing the strain leads to an increase in an amplitude of the pre-patterns along one direction without emergence of a period doubled mode, thereby forming a high aspect ratio biaxially wrinkled surface. 18. Method of claim 17, wherein the period of the pre-pattern is identical to the natural period of the composite pre-patterned material. 19. Method of claim 17, wherein the strain along the two directions are released simultaneously but at an unequal rate along the two directions.
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