초록 ▼

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization rever

Methods, devices, and compositions for use with spintronic devices such as magnetic random access memory (MRAM) and spin-logic devices are provided. Methods include manipulating magnetization states in spintronic devices and making a structure using spin transfer torque to induce magnetization reversal. A device described herein manipulates magnetization states in spintronic devices and includes a non-magnetic metal to generate spin current based on the giant spin Hall effect, a ferromagnetic thin film with perpendicular magnetic anisotropy, an oxide thin film, and an integrated magnetic sensor. The device does not require an insertion layer between a non-magnetic metal with giant spin Hall effect and a ferromagnetic thin film to achieve perpendicular magnetic anisotropy.

대표청구항 ▼

1. A multilayer composition for manipulating magnetization states in spintronic devices comprising: a non-magnetic metal layer having a spin Hall angle that converts an electrical current to a traverse spin current, the non-magnetic metal layer having a thickness that is less than the critical thick

1. A multilayer composition for manipulating magnetization states in spintronic devices comprising: a non-magnetic metal layer having a spin Hall angle that converts an electrical current to a traverse spin current, the non-magnetic metal layer having a thickness that is less than the critical thickness (tc) of the non-magnetic metal layer, and the non-magnetic metal layer having a resistivity constant to within about 15% throughout a temperature range of about 5 K to about 600 K;a free layer having perpendicular magnetic anisotropy and an interface with the non-magnetic metal layer, and the free layer is configured to accept the traverse spin current from the non-magnetic metal layer to produce spin-transfer torque (STT) in the free layer and magnetization switching; andan oxide barrier layer with a crystalline structure having an interface with the free layer. 2. The composition according to claim 1, wherein the non-magnetic layer is characterized by at least one of the following properties: has an interface with a thermally oxidized Si wafer;the SST induces switching in the free layer at a current density of less than or equal to about 106 A/cm2 in the non-magnetic layer;the spin Hall angle is selected from the group consisting of: at least about 0.01, at least about 0.05, at least about 0.1, at least about 0.5, at least about 1, at least about 5, and at least about 10;the resistivity selected from the group consisting of: at least about 50 μΩ-cm, at least about 150 μΩ-cm, and at least about 250 μΩ-cm, at least about 300 μΩ-cm, at least about 350 μΩ-cm, at least about 400 μΩ-cm, at least about 450 μΩ-cm, and at least about 500 μΩ-cm;has a spin diffusion length selected from the group consisting of: at least about 0.1 nm, at least about 0.5 nm, at least about 1 nm, at least about 5 nm, at least about 10 nm, at least about 20 nm, at least about 30 nm, and at least about 40 nm;and is at least one metal selected from the group consisting of: scandium, titanium, vanadium, yttrium, zirconium, niobium, molybdenum, ruthenium, rhodium, palladium, hafnium, tantalum, tungsten, osmium, iridium, platinum, gold, gallium, germanium, arsenic, selenium, indium, tin, antimony, tellurium, thallium, lead, and bismuth. 3. The composition according to claim 1, further characterized by at least one of the following: has a stacked structure;comprises a capping layer or overlayer to prevent oxidation, the capping layer or overlayer having an interface with the oxide barrier layer;the capping layer or overlayer comprises tantalum;has an insertion layer;the insertion layer comprises hafnium; andthe insertion layer is not between the non-magnetic layer and the free layer. 4. The composition according to claim 1, wherein the free layer is characterized by at least one of: has a coercivity selected from the group consisting of: at least about 0.1 Oe, at least about 1 Oe, at least about 10 Oe, and at least about 100 Oe;is a ferromagnetic thin film;the ferromagnetic thin film is (CoxFe100−x)100−yBy, wherein 0