초록 ▼

The present disclosure provides a photodiode device, which includes a semiconductor substrate, a well region in the semiconductor substrate of a first dopant type, a first doped region of the first dopant type in the well region, and a second doped region of a second dopant type disposed in the well

The present disclosure provides a photodiode device, which includes a semiconductor substrate, a well region in the semiconductor substrate of a first dopant type, a first doped region of the first dopant type in the well region, and a second doped region of a second dopant type disposed in the well region and over the first doped region. The second doped region comprises first recesses exposed through a surface of the second doped region, and a first portion of the second doped region on the surface comprises a first doping concentration of the second dopant type greater than a second doping concentration of a second portion of the second doped region away from the first recesses.

대표청구항 ▼

1. A photodiode device, comprising: a semiconductor substrate;a well region in the semiconductor substrate of a first dopant type;a first doped region of the first dopant type in the well region;a plurality of contact vias; anda second doped region of a second dopant type disposed in the well region

1. A photodiode device, comprising: a semiconductor substrate;a well region in the semiconductor substrate of a first dopant type;a first doped region of the first dopant type in the well region;a plurality of contact vias; anda second doped region of a second dopant type disposed in the well region and over the first doped region, the second doped region comprising first recesses exposed through a surface of the second doped region,wherein a first portion of the second doped region on the surface comprises a first doping concentration of the second dopant type greater than a second doping concentration of a second portion of the second doped region away from the first recesses, andwherein the second doped region is partitioned into a grid of pads from a top view by the first recesses, the plurality of conductive vias being correspondingly coupled to each of the pads. 2. The photodiode device of claim 1, wherein the first portion of the second doped region covers an entirety of a sidewall of each of the first recesses. 3. The photodiode device of claim 1, wherein the first portion of the second doped region extends below a bottom of each of the first recesses. 4. The photodiode device of claim 1, further comprising a dielectric material filling the first recesses. 5. The photodiode device of claim 1, wherein the first doping concentration is between about 1E19 and about 2E20 atoms/cm3. 6. The photodiode device of claim 1, further comprising a fourth doped region of the first dopant type in the well region, the fourth doped region being electrically coupled to an anode terminal. 7. The photodiode device of claim 1, wherein each of the first recesses further comprises a bottom surface in the second doped region. 8. The photodiode device of claim 1, further comprising a dielectric layer over the second doped region and surrounding the plurality of contact vias. 9. The photodiode device of claim 1, wherein the first recesses comprise staggered sidewalls meeting one another. 10. The photodiode device of claim 1, wherein the first portion contacts the first doped region. 11. The photodiode device of claim 1, further comprising second recesses on a surface of the semiconductor substrate opposite the second doped region. 12. A photodiode device, comprising: a semiconductor substrate of a first dopant type;a well region of a second dopant type disposed in the semiconductor substrate;a first doped region of the second dopant type disposed in the well region;a second doped region of the first dopant type disposed in the well region and over the first doped region;a third doped region of the first dopant type disposed in the second doped region, the third doped region comprising recesses; anda plurality of contact vias,wherein the third doped region comprises a doping concentration greater than a doping concentration of the second doped region and covers at least a top portion of each of the recesses,wherein the third doped region comprises a pattern of an array of pads from a top view separated by the recesses, and the plurality of contact vias are correspondingly coupled to each of the pads. 13. The photodiode device of claim 12, further comprising an isolation structure surrounding the well region, the recesses having a depth substantially equal to a depth of the isolation structure. 14. The photodiode device of claim 13, wherein the recesses are filled with a material that is the same as a material of the isolation structure. 15. The photodiode device of claim 12, wherein the second doped region separates the recesses and the third doped region from the first doped region. 16. The photodiode device of claim 12, further comprising a dielectric layer over the second doped region and the third doped region, the dielectric layer filling the recesses. 17. A photodiode device, comprising: a well region of a first dopant type;a first doped region of the first dopant type disposed in the well region;a plurality of contact vias; anda second doped region of a second dopant type disposed over the first doped region, a surface of the second doped region comprising anti-reflection structures,wherein the second doped region comprises a first portion including the anti-reflection structures and having a first doping concentration greater than a second doping concentration of a second portion of the second doped region adjacent to the first doped region, andwherein the second doped region comprises a pattern of an array of pads from a top view separated by the anti-reflection structures, the plurality of conductive vias being correspondingly coupled to each of the pads. 18. The photodiode device according to claim 17, wherein the first doping concentration is greater than a third doping concentration of a third portion of the second doped region adjacent to the well region. 19. The photodiode device according to claim 17, further comprising an inter-layer dielectric covering the anti-reflection structures and the well region. 20. The photodiode device according to claim 19, further comprising a conductive via extending through the inter-layer dielectric and contacting the first portion of the second doped region.