최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0565077 (2014-12-09) |
등록번호 | US-10224210 (2019-03-05) |
발명자 / 주소 |
|
출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 | 피인용 횟수 : 0 인용 특허 : 872 |
A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma produc
A plasma processing system includes a process chamber and a plasma source that generates a plasma in a plasma cavity. The plasma cavity is substantially symmetric about a toroidal axis. The plasma source defines a plurality of outlet apertures on a first axial side of the plasma cavity Plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity toward the process chamber. A method of plasma processing includes generating a plasma within a substantially toroidal plasma cavity that defines a toroidal axis, to form plasma products, and distributing the plasma products to a process chamber through a plurality of outlet openings substantially azimuthally distributed about a first axial side of the plasma cavity, directly into a process chamber.
1. A plasma processing system, comprising: a process chamber that includes a wafer pedestal, wherein the process chamber extends upwards at least from the wafer pedestal to a plane that is horizontal and above a top surface of the wafer pedestal; anda plasma source, comprising an induction coil, a m
1. A plasma processing system, comprising: a process chamber that includes a wafer pedestal, wherein the process chamber extends upwards at least from the wafer pedestal to a plane that is horizontal and above a top surface of the wafer pedestal; anda plasma source, comprising an induction coil, a magnetic core element and a plasma generation block that defines a toroidal plasma cavity, wherein: in operation, the plasma source generates a plasma in the plasma cavity;the plasma generation block and the plasma cavity are substantially radially symmetric about a toroidal axis that defines an axial direction and a radial direction;the plasma generation block defines a plurality of outlet apertures on a first axial side of the plasma cavity, wherein plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the plasma cavity, through the plane and into the process chamber;the induction coil winds at least partially about the magnetic core element, andthe magnetic core element is disposed adjacent to the plasma generation block, and extends from a first end that is at or above the plane, on a radially outward side of the plasma generation block, passes above the plasma generation block on a second axial side of the plasma cavity that is axially opposite to the first axial side, and to a second end that is at or above the plane, on a radially inward side of the plasma generation block, but does not extend below the plane;such that during operation, a current in the induction coil induces a magnetic flux in the magnetic core element, and the magnetic flux in the magnetic core element induces an azimuthal electric current within the plasma cavity, to generate the plasma. 2. The plasma processing system of claim 1, the plasma generation block comprising aluminum and including a plurality of dielectric breaks that, during operation, interrupt azimuthal currents induced in the aluminum by the magnetic flux. 3. The plasma processing system of claim 2, wherein the magnetic core element is one of two magnetic core elements, and each of the two magnetic core elements is arranged about the plasma generation block in azimuthal alignment with corresponding ones of the dielectric breaks. 4. The plasma processing system of claim 1, the process chamber being substantially radially symmetric about the toroidal axis,the plurality of outlet apertures being arranged symmetrically with respect to the toroidal axis and with a plurality of the outlet apertures at each of at least three different radii relative to the toroidal axis, such that the plasma products are distributed uniformly, across the radial direction, from the plasma cavity toward the process chamber. 5. The plasma processing system of claim 1, wherein the plasma generation block is flattened at the plane on the first axial side of the plasma cavity and rounded on the second axial side of the plasma cavity. 6. The plasma processing system of claim 5, wherein the magnetic core element is rounded so as to maintain proximity to the plasma generation block from the first end, on the radially outward side of the plasma generation block, about the plasma generation block on the second axial side, to the second end, on the radially inward side of the plasma generation block. 7. The plasma processing system of claim 1, wherein the plasma generation block is flattened at the plane, and the first and second ends of the magnetic core element extend to, but not through, the plane. 8. The plasma processing system of claim 1, wherein the magnetic core element at least partially encloses a cooling tube through which, during operation, a liquid flows to remove heat dissipated by the magnetic core element. 9. A single wafer plasma processing system, comprising: a process chamber, wherein the process chamber is substantially radially symmetric about a toroidal axis,the process chamber includes a pedestal that positions a single wafer for processing within the process chamber, andthe pedestal is disposed substantially concentric with the toroidal axis and positions the single wafer concentric with the toroidal axis;a plasma source that, during operation, generates a plasma in a toroidal plasma cavity, the plasma source comprising a plasma generation block, comprising at least two metal sections interspersed with at least two dielectric breaks along a major circumference of the toroidal plasma cavity, wherein each of the dielectric breaks consists of dielectric material that encircles a minor circumference of the plasma cavity, such that no metal exists within an azimuthal section of the plasma generation block at each of the dielectric breaks; andat least two magnetic elements adjacent to the toroidal plasma cavity that partially encircle, but do not completely encircle, a minor circumference of the toroidal plasma cavity, wherein each of the magnetic elements is adjacent to the toroidal plasma cavity on a radially inner side of the toroidal plasma cavity, a side of the toroidal plasma cavity that faces away from the process chamber, and a radially outer side of the toroidal plasma cavity, and wherein the major circumference of the toroidal plasma cavity is substantially radially symmetric about the toroidal axis,the plasma source defines a plurality of outlet apertures on a first axial side of the toroidal plasma cavity,during operation, plasma products produced by the plasma pass in the axial direction, through the plurality of outlet apertures, from the toroidal plasma cavity, toward the process chamber, andat least some of the outlet apertures penetrate the dielectric breaks. 10. The plasma processing system of claim 9, further comprising a diffuser plate defining a plurality of second apertures therethrough, disposed between a second cavity and the process chamber, such that during operation, the plasma products pass through the plurality of outlet apertures into the second cavity, and through the second apertures to enter the process chamber, and wherein: the diffuser plate extends along a continuous plane at a fixed height from the pedestal from the toroidal axis to a radial limit of the diffuser plate; andat least some of the second apertures are radially further from the toroidal axis than a radius of the pedestal. 11. The plasma processing system of claim 10, the diffuser plate defining one or more gas passages that, during operation, conduct un-activated gases that have not passed through the toroidal plasma cavity, to the process chamber, and wherein the gas passages form outlets on a side of the diffuser plate that faces the process chamber. 12. The plasma processing system of claim 9, wherein each of the metal sections and each of the dielectric breaks form respective planar surfaces on the first axial side of the toroidal plasma cavity. 13. The plasma processing system of claim 12, wherein: each of the metal sections and each of the dielectric breaks form respective curved surfaces on a second axial side of the toroidal plasma cavity, and each of the at least two magnetic elements are rounded so as to maintain proximity to the metal sections and the dielectric breaks on the radially outer side, the second axial side, and the radially inner side, of the toroidal plasma cavity. 14. The plasma processing system of claim 9, wherein respective cooling tubes pass through the at least two magnetic elements, and during operation, liquid flows through the cooling tubes to remove heat dissipated by the at least two magnetic elements.
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