Device switching using layered device structure
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-027/24
H01L-045/00
G11C-013/00
출원번호
US-0451045
(2017-03-06)
등록번호
US-10224370
(2019-03-05)
발명자
/ 주소
Jo, Sung Hyun
Lu, Wei
출원인 / 주소
CROSSBAR, INC.
대리인 / 주소
Amin, Turocy & Watson, LLP
인용정보
피인용 횟수 :
0인용 특허 :
199
초록▼
A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a sp
A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a buffer material disposed between the first electrode and the switching material. The buffer material provides a blocking region between the switching material and the first electrode so that the blocking region is substantially free from metal particles from the second metal material when a first voltage is applied to the second electrode.
대표청구항▼
1. A semiconductor device, comprising: a semiconductor substrate;at least one CMOS device formed upon the semiconductor substrate;an insulating layer disposed upon the CMOS device;a first wiring structure disposed upon the insulating layer and coupled to the at least one CMOS device, wherein the fir
1. A semiconductor device, comprising: a semiconductor substrate;at least one CMOS device formed upon the semiconductor substrate;an insulating layer disposed upon the CMOS device;a first wiring structure disposed upon the insulating layer and coupled to the at least one CMOS device, wherein the first wiring structure comprises a first metal material;a buffer material coupled to the first wiring structure;a non-stoichiometric switching material disposed adjacent to and touching the buffer material, wherein the non-stoichiometric switching material comprises a material having a plurality of non-stoichiometric defect sites; anda second wiring structure disposed adjacent to and touching the non-stoichiometric switching material comprising a first portion and a second portion, wherein the first portion is disposed adjacent to and touching the non-stoichiometric switching material, wherein the first portion comprises a second metal material having a plurality of metal particles, wherein at least some metal particles from the plurality of metal particles are movably disposable within non-stoichiometric defect sites from the plurality of non-stoichiometric defect sties;wherein the buffer material separates and prevents the first wiring structure from touching the non-stoichiometric switching material, and wherein the buffer material is substantially free from metal particles from the first portion of the second wiring structure. 2. The device of claim 1, wherein the buffer material, the non-stoichiometric switching material and the second wiring structure form a resistive switching device; andwherein the at least one CMOS device comprises a portion of a control circuit for the resistive switching device. 3. The device of claim 1, wherein a defect density of the plurality of non-stoichiometric defect sites within the non-stoichiometric switching material exceeds a defect density of buffer material defect sites within the buffer material. 4. The device of claim 3, wherein the plurality of non-stoichiometric defect sites within the non-stoichiometric switching material are selected from the group consisting of: dangling bonds, atomic dislocations, crystal plane dislocation, molecular dislocation, and grain boundaries. 5. The device of claim 1, wherein the second metal material is selected from the group consisting of: silver, aluminum, a metal alloy, platinum, palladium, and nickel. 6. The device of claim 1, wherein the metal particles from the plurality of metal particles are selected from the group consisting of: aluminum, platinum, palladium and nickel. 7. The device of claim 1, wherein the second portion of the second wiring structure comprises tungsten. 8. The device of claim 1, wherein the buffer material comprises a conductive material; andwherein the buffer material remains substantially free from metal particles from the plurality of metal particles. 9. A method for forming a semiconductor device comprising: receiving a semiconductor substrate having at least one CMOS device formed thereon and having an insulating layer disposed upon the at least one CMOS device;forming a first electrode upon the insulating layer and coupled to the at least one CMOS device, wherein the first wiring structure comprising a first metal material;forming a buffer material coupled to the first electrode;forming a non-stoichiometric switching material adjacent to and touching the buffer material, wherein the non-stoichiometric switching material comprises a material having a plurality of non-stoichiometric defect sites;forming a second electrode coupled to the non-stoichiometric switching material, wherein the second electrode comprises a first portion and a second portion, wherein the first portion is disposed above and touching the non-stoichiometric switching material, wherein the first portion comprises a second metal material characterized by a high diffusivity in the non-stoichiometric switching material, wherein the second portion is coupled to the first portion and comprises a conductive material;wherein the plurality of non-stoichiometric defect sites is configured to releasably trap metal particles derived from the second metal material from the first portion of the second wiring structure; andwherein the buffer material separates the first wiring structure and the non-stoichiometric switching material. 10. The method of claim 9, wherein the buffer material, the non-stoichiometric switching material and the second electrode form a resistive switching device; andwherein the at least one CMOS device comprises a control circuit for the resistive switching device. 11. The method of claim 9, wherein a defect density of the plurality of non-stoichiometric defect sites of the non-stoichiometric switching material exceeds a defect density of buffer defect sites of the buffer material. 12. The method of claim 9, wherein the metal particles derived from the second metal material are selected from the group consisting of: silver, aluminum, platinum, palladium and nickel. 13. The method of claim 9, wherein the second metal material is selected from the group consisting of: aluminum, a metal alloy, platinum, palladium and nickel. 14. The method of claim 9, wherein the conductive material of the second portion of the second electrode comprises tungsten. 15. The method of claim 9, wherein the buffer material has a thickness of less than 5 nm or greater than 20 nm. 16. The method of claim 9, wherein forming the non-stoichiometric switching material comprises performing a deposition process. 17. A method for a semiconductor device having a resistive switching device comprising a first electrode adjacent to and touching a resistive switching material that is adjacent to and touching a buffer material, which comprises: applying a first voltage to the first electrode comprising a first metal material to allow a plurality of metal particles from the first metal material to diffuse into the resistive switching material and to form a conductive region therein;removing the first voltage from the first electrode wherein the plurality of metal particles become trapped within defect sites of the resistive switching material; andapplying a second voltage to the first electrode to form a metal filament structure from the plurality of metal particles extending from the first electrode towards the second electrode, wherein the buffer material inhibits the metal filament from contacting a second electrode of the resistive switching device;wherein the resistive switching material comprises a non-stoichiometric switching material; andwherein metal particles from the plurality of metal particles are selected from the group consisting of: aluminum, platinum, palladium and nickel. 18. The method of claim 17, wherein the second voltage is selected from the second group consisting of: a write voltage and a read voltage. 19. The method of claim 17, wherein the second voltage is a read voltage; andwherein the method comprises determining a current flow through the resistive switching device in response to the read voltage. 20. The method of claim 17, further comprising performing an erase cycle to thereby retract the metal filament structure away from the second electrode and towards the first electrode.
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