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Method for forming separation starting point and separation method 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • B32B-043/00
  • H01L-021/683
  • H01L-027/12
  • H01L-051/00
  • B32B-037/18
  • H01L-051/56
  • B32B-038/10
  • B32B-037/02
  • B32B-037/12
  • B32B-037/00
  • H01L-027/32
출원번호 US-0413696 (2017-01-24)
등록번호 US-10259207 (2019-04-16)
우선권정보 JP-2016-011991 (2016-01-26)
발명자 / 주소
  • Ohno, Masakatsu
  • Takeshima, Koichi
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson Intellectual Property Law Office
인용정보 피인용 횟수 : 0  인용 특허 : 74

초록

A starting point for separating a separation layer and a layer to be separated is formed in a process member. A first step of irradiating a first portion of the process member with first laser light in a frame-like shape and a second step of irradiating at least part of a region which is irradiated

대표청구항

1. A method for forming a separation starting point, comprising: a first step of irradiating a first portion of a process member with first laser light in a frame-like shape; anda second step of irradiating a second portion of the process member with second laser light,wherein the first portion and

이 특허에 인용된 특허 (74)

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