Method of forming a self-aligned contact using selective SiO2 deposition
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/768
H01L-021/02
H01L-021/285
H01L-021/3105
H01L-023/522
H01L-023/532
출원번호
15895736
(2018-02-13)
등록번호
10453749
(2019-10-22)
발명자
/ 주소
Tapily, Kandabara N.
Han, Sangcheol
Chae, Soo Doo
출원인 / 주소
Tokyo Electron Limited
인용정보
피인용 횟수 :
0인용 특허 :
0
초록▼
A substrate processing method for forming a self-aligned contact using selective SiO2 deposition is described in various embodiments. The method includes providing a planarized substrate containing a dielectric layer surface and a metal-containing surface, coating the dielectric layer surface with a
A substrate processing method for forming a self-aligned contact using selective SiO2 deposition is described in various embodiments. The method includes providing a planarized substrate containing a dielectric layer surface and a metal-containing surface, coating the dielectric layer surface with a metal-containing catalyst layer, and exposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 layer on the metal-containing catalyst layer on the dielectric layer surface. According to one embodiment, the method further includes depositing an etch stop layer on the SiO2 layer and on the metal-containing surfaces, depositing an interlayer dielectric layer on the planarized substrate, etching a recessed feature in the interlayer dielectric layer and stopping on the etch stop layer above the metal-containing surface, and filling the recessed feature with a metal.
대표청구항▼
1. A substrate processing method, comprising: providing a planarized substrate containing a dielectric layer surface and a metal-containing surface;coating the dielectric layer surface with a metal-containing catalyst layer; andexposing the planarized substrate to a process gas containing a silanol
1. A substrate processing method, comprising: providing a planarized substrate containing a dielectric layer surface and a metal-containing surface;coating the dielectric layer surface with a metal-containing catalyst layer; andexposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 layer on the metal-containing catalyst layer on the dielectric layer surface, wherein the exposing the planarized substrate to the process gas containing the silanol gas is performed in the absence of any oxidizing and hydrolyzing agent at a substrate temperature of approximately 150° C., or less. 2. The method of claim 1, wherein the SiO2 layer forms a raised SiO2 feature adjacent to the metal-containing surface. 3. The method of claim 1, wherein the silanol gas is selected from the group consisting of tris(tert-pentoxy) silanol, tris(tert-butoxy) silanol, and bis(tert-butoxy)(isopropoxy) silanol. 4. The method of claim 1, wherein the substrate temperature is approximately 150° C., or less, during the exposing. 5. The method of claim 1, wherein the substrate temperature is approximately 100° C., or less, during the exposing. 6. The method of claim 1, wherein the process gas consists of a silanol gas and an inert gas. 7. The method of claim 1, wherein the SiO2 layer is deposited on the metal-containing catalyst layer in a self-limiting process. 8. The method of claim 7, wherein a thickness of the SiO2 layer is about 5 nm. 9. The method of claim 1, wherein the exposing further includes exposing the planarized substrate to the process gas containing the silanol gas for an additional time period that deposits a thinner additional SiO2 layer on the metal-containing surface; andremoving the additional SiO2 layer from the metal-containing surface in an etching process. 10. The method of claim 9, further comprising, repeating the coating, exposing and removing steps at least once in order to increase a thickness of the SiO2 layer on the dielectric layer surface. 11. The method of claim 1, further comprising: depositing an etch stop layer on the SiO2 layer and on the metal-containing surface. 12. The method of claim 11, further comprising depositing an interlayer dielectric layer on the planarized substrate;etching a recessed feature in the interlayer dielectric layer and stopping on the etch stop layer above the metal-containing surface; andfilling the recessed feature with a metal. 13. The method of claim 11, wherein the etch stop layer includes Al2O3. 14. A substrate processing method, comprising: providing a planarized substrate containing a dielectric layer surface and a metal-containing surface;coating the dielectric layer surface with a metal-containing catalyst layer;exposing the planarized substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 layer on the dielectric layer surface relative to the metal-containing surface, wherein the exposing is performed in the absence of any oxidizing and hydrolyzing agent at a substrate temperature of approximately 150° C., or less;depositing an etch stop layer on the SiO2 layer and on the metal-containing surface;depositing an interlayer dielectric layer on the planarized substrate;etching a recessed feature in the interlayer dielectric layer and stopping on the etch stop layer above the metal-containing surface; andfilling the recessed feature with a metal. 15. The method of claim 14, wherein the etch stop layer includes Al2O3. 16. The method of claim 14, wherein the SiO2 layer forms a raised SiO2 feature adjacent to the metal-containing surface. 17. A substrate processing method, comprising: providing a planarized substrate containing a dielectric layer surface and a metal-containing surface;coating the dielectric layer surface with a first metal-containing catalyst layer;exposing the planarized substrate to a process gas containing a silanol gas for a time period that deposits a SiO2 layer on the dielectric layer surfaces and a thinner additional SiO2 layer on the metal-containing surface, wherein the exposing is performed in the absence of any oxidizing and hydrolyzing agent at a substrate temperature of approximately 150° C., or less;removing the additional SiO2 layer from the metal-containing surface in an etching process; andrepeating the coating, exposing and removing steps at least once in order to increase a thickness of the SiO2 layer on the dielectric layer surface. 18. The method of claim 17, wherein the etch stop layer includes Al2O3. 19. The method of claim 17, wherein the SiO2 layer forms a raised SiO2 feature adjacent the metal-containing surface.
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