초록 ▼

b0c5b4ebc0dab1e2c0fac7d7c0bb c0ccbfebc7d1 bdbac7c9 b9ebbaeabcd2c0dab4c2 b1e2c1b8c0c7 MR c7ecb5e5bab8b4d9 b3f4c0ba b1e2b7cfb9d0b5b5b8a6b0aeb4c2 c0e7bbfd c0fcbfeb c0dab1e2 c7ecb5e5c0c7 c1a6c1b6b8a6 b0a1b4c9c4c9c7d4c0b8b7cebde1 c0dab1e2b1e2b7cf bdc3bdbac5dbc0c7 b1e2b7cf

b0c5b4ebc0dab1e2c0fac7d7c0bb c0ccbfebc7d1 bdbac7c9 b9ebbaeabcd2c0dab4c2 b1e2c1b8c0c7 MR c7ecb5e5bab8b4d9 b3f4c0ba b1e2b7cfb9d0b5b5b8a6b0aeb4c2 c0e7bbfd c0fcbfeb c0dab1e2 c7ecb5e5c0c7 c1a6c1b6b8a6 b0a1b4c9c4c9c7d4c0b8b7cebde1 c0dab1e2b1e2b7cf bdc3bdbac5dbc0c7 b1e2b7cfb9d0b5b5b8a6c8b9b1e2c0fbc0b8b7ce c1f5b0a1 bdc3c5b3 bcf6 c0d6b0d4 c7cfb8aeb6f3 b1e2b4ebb5c7b0edc0d6b4d9. b1e2c1b8c0c7 c0dab1e2c0fac7d7 c7ecb5e5b8a6 bbe7bfebc7d1 b0e6bfecbab8b4d93-5 b9e8 c0ccbbf3c0c7 b1e2b7cf b9d0b5b5b0a1 bfb9bbf3b5c8b4d9.babb bfacb1b8bfa1bcadb4c2 bdbac7c9 b9ebbaeac7fc b0c5b4eb c0dab1e2c0fac7d7c7ecb5e5bfeb c0dab1e2b1b3c8af b0e1c7d5 b9dab8b7c0bb bdbac6dbc5cdb8b5b9e6b9fdc0b8b7ce c1a6c1b6c7cfb0ed, b1d7 c6afbcbac0bb c3f8c1a4c7d4c0b8b7cebde1c0dab1e2c7ecb5e5b7ce c0fbc7d5c7d1 b9dab8b7c0bb c1a6c1b6c7cfbfb4b4d9. b6c7c7d1c1a6c1b6b5c8 b9dab8b7c0bb bbe7bfebc7cfbfa9 bdbac7c9b9ebbaea bcd2c0dab8a6c1a6c1b6c7cfbfb4b4d9.RF diode sputtering b9e6b9fdc0b8b7ce Permalloy bfcd c0dab1e2b1b3c8af b0e1c7d5c0bbc7cfb4c2 TbCo bfcd FeMn c0bb bbe7bfebc7cfbfa9 bdbac7c9b9ebbaea b1b8c1b6c0c7b9dab8b7c0bb c1a6c1b6c7cfbfb4b4d9. Glass/NiFe/Cu/NiFe/TbCo(FeMn) bcf8c0b8b7cec1f5c2f8c7cfbfb4b4d9. c1f5c2f8bdc3 b1e2c6c7bfa1 45 Oe c1a4b5b5c0c7 c0dac0e5c0bbc0ceb0a1c7cfbfa9 b0adc0dabcbac3fe c0cc c0ccb9e6bcbac0bb b0aeb5b5b7cf c7cfbfb4b4d9.b9dab8b7c0c7 c0dab1e2c0fb c6afbcbac0ba c1f8b5bfbdc3c6edc0dab7c2b0e8b8a6bbe7bfebc7cfbfa9 c3f8c1a4 c7cfbfb4b0ed, c0dac3bc c1a6c0dbb5c8 c0dab1e2c0fac7d7c3f8c1a4c0e5c4a1b8a6 bbe7bfebc7cfbfa9 c0dab1e2c0fac7d7c0bb c3f8c1a4c7cfbfb4b4d9.bcd2c0dab4c2 E-beam b8c5bdbac5a9 bcbcc6aeb8a6 bcb3b0e8, c1a6c1b6c7cfbfa9b1a4bdc4b0a2 b0f8c1a4(potolithographic process)c0bb bbe7bfebc7cfbfa9c1a6c1b6c7cfbfb4b4d9. bcd2c0da c6d0c5cf c1a6c1b6b8a6 c0a7c7d8 bdbac6dbc5cdbfa1c4aab0fa lift-0ffb0f8c1a4c0cc bbe7bfebb5c7befab4d9. c0ccbfcdb0b0c0cc c1a6c1b6b5c8b9dab8b7bfa1bcad bee0 2.3 a1ad 2.9% c1a4b5b5c0c7 c0dab1e2c0fac7d7baafc8adc0b2c0bbbef2befac0b8b8e7 10 - 50 Oe c0c7 c0dbc0ba c0dac0e5 c7cfbfa1bcadc0dab1e2c0fac7d7baafc8adc0b2c0bb bef2c0bb bcf6 c0d6befab4d9.

Abstract ▼

Spin valve elements which utilize giantmagnetoresistive effect,make it possibleto fabricate reproduce heads having much higher recording density thanexisting MR(magnetoresistive) heads. Therefore, it is expected to increase therecording density of the magnetic recording system drastica

Spin valve elements which utilize giantmagnetoresistive effect,make it possibleto fabricate reproduce heads having much higher recording density thanexisting MR(magnetoresistive) heads. Therefore, it is expected to increase therecording density of the magnetic recording system drastically, up to 3a1ad5 times ofthepresent recording density.In this research, exchange coupled thin films for spin valve typegiantmagnetoresistive heads were deposited by sputtering method, and theirmagneticchracteristics were measured. Also, spin valve elements were fabricatedusing the films.TbCo or FeMn films were RF diode sputter deposited to exchange couple with NiFelayers to form spin valve structure. Glass/NiFe/Cu/NiFe/TbCo orglass/FeMn(bufferlayer)/NiFe/Cu/NiFe/FeMn layers were deposited, while applying 45 Oe of DC magneticfield to induce anisotropy. Magnetic properties ofthe films were measured by avibrating sample magnetometer and the magnetoresistance change was measured by amagnetoresistance measurementsystem.Spin valve elements were made using an e-beam mask set and photlithographicprocesses. Sputter etching and lift-off techique were used to delineate device pattens.Magnetoresistance change obtained were 2.3 a1ad 2.9 % and the applied fieldsnecessary were 10 a1ad 50 Oe.

목차 Contents

• 목차...6
• 1. 서 론...9
• 2. 연구 이론...11
• 2-1. 자기저항효과...11
• 2-2. 거대자기저항효과...11
• 2-3. 자기저항 효과와 거대자기저항 효과의 비교...14
• 2-4. 다충박막에서의 거대자기저항...15
• 2-4-1 스핀밸브구조의 다충 박막...15
• 2-5. 자기교환결합...17
• 2-5-1. 강자성-반강자성 자기교환결합...17
• 2-5-2. 강자성체와 준강자성체의 자기 교환 결합...18
• 3. 연구 방법...19
• 3-1. 박막제조...19
• 3-2. 마스크 세트 제작...20
• 3-3. 소자 제조...25
• 3-4. 특성측정...25
• 4. 결과 및 고찰...26
• 4-1. 박막 제조...26
• 4-1-1. 박막 두께측정...26
• 4-1-2. NiFe/Cu/NiFe/TbCo 박막...26
• 4-1-3. FeMn/NiFa/Cu/NiFe/FeMn 박막...28
• 4-2. 소자 제조...34
• 5. 결론...35
• 6. 인용문헌...36
• 연구 수행 관련 논문 발표 목록서...38
• 자체 평가서...39