초록 ▼

본 연구는 이종접합에피층의 하나인 GaAs/Si을 주 대상으로 하여 다음과 같은 내용의 연구를 수행하였다. 1. MOCVD법으로 SI기판위에 GaAs 에피층을 성장하고 이에 대한 결정구조적 특성을 TEM(transmission electron microscope)과 DCX(double crystal X-ray diffraction)법으로 조사하였다. 2. 성장된 GaAs/Si의 RTA(rapid thermal annealing)와 수소화(hydrogen plasma exposure)함에 따른 에피층의 전기광학적 특성을 조사하고

본 연구는 이종접합에피층의 하나인 GaAs/Si을 주 대상으로 하여 다음과 같은 내용의 연구를 수행하였다. 1. MOCVD법으로 SI기판위에 GaAs 에피층을 성장하고 이에 대한 결정구조적 특성을 TEM(transmission electron microscope)과 DCX(double crystal X-ray diffraction)법으로 조사하였다. 2. 성장된 GaAs/Si의 RTA(rapid thermal annealing)와 수소화(hydrogen plasma exposure)함에 따른 에피층의 전기광학적 특성을 조사하고 깊은 준위들과의 관련성을 연구하였다. 3. GaAs 에피층내에 존재하는 깊은준위들의 거동과 물리적 근원에 접근하였다.

Abstract ▼

The objectives of this research project are the basic studies on the properties of GaAs epliayers grown on Si substrates by metal organic chemical vapor deposition(MOCVD) and the studies the origins of deep levels in GaAs/Si heterojunction. The utilization of more and more semiconducting materials

The objectives of this research project are the basic studies on the properties of GaAs epliayers grown on Si substrates by metal organic chemical vapor deposition(MOCVD) and the studies the origins of deep levels in GaAs/Si heterojunction. The utilization of more and more semiconducting materials for the fabrication of heterojunction devices during the past decade has led to numerous basic and applied investigations and their interpretation in this field. The heterojunction epitaxial film/substrate combinations consisit of a film materials that is chemically (Ge/Si, GaAs/Si, ZnS/BeO) and often crystallographically (Si/sapphire, GaN/sapphire) very different than the substrate materials. so, these structures are usually more difficult to grow than homoepitaxy. The interest in GaAs/Si, one of the heterojunction structures, has been increased rapidly because of two potential applications of general importance of the solid-state device community. The first is the use of Si as a substrate for GaAs epitaxial deposition, with advantages over GaAs substrates in the availability of large-diameter wafers, greater mechanical strength, higher thermal conductivity, and lower cost. The second, and by for the more significant application, is the monolitic integration of GaAs and Si devices, with the goal of combining the sophistication of Si VLSI technology with the superior speed and optoelectronic capabilities of GaAs-based micro-electronics. In this study, the crystallinity and structural property of GaAs/Si grown by MOCVD were measured by TEM and DCX methods. And the electro-optical properties of GaAs epilayers were also measured by I-V, C-V, deep level transient spectroscopy(DLTS), and photoluminescence(PL) measurements. During rapid thermal annealing(RTA) and hydrogen plasma exposure(hydrogenation) on GaAs/Si, the electrical properties and deep levels in epilayer were studied and then the relation between them were discussed.

목차 Contents

• 제1장 서 론...23
• 제2장 MOCVD법에 의한 이종접합에피층의 성장...27
• 제1절 GaAs/Si 에피층의 성장...27
• 제2절 GaAs/Si의 구조적 성질...36
• 제3장 MOCVD법으로 성장된 GaAs/Si의 전기광학적특성과 깊은준위연구...44
• 제1절 시료준비 및 실험...44
• 제2절 GaAs/Si의 열처리에 따른 깊은준위연구...46
• 제3절 Photoluminescence특성 및 논의...63
• 제4절 GaAs/Si에 대한 수소화 효과...71
• 제4장 결론 및 건의사항...85
• 제1절 결 론...85
• 제2절 건의사항...86
• 참고문헌...88