초록 ▼

${\bigcirc}$ RF MEMS 스위치 개발: 1. 용량형 shunt RF MEMS 스위치 개발(insertion loss ＜ 0.1dB, isolation ＞ 40 dBon/off ratio ＞500, 구동전압 : $3 {\sim} 8$ V. 1 million cycle test를 성공). 2. mm-wave 응용을 위한 용량형 shunt RF MEMS 스위치 제작: insertion loss ＜ 0.25 dB, isolation ＞ 30 dB at 35 GHz, 구동전압 :

${\bigcirc}$ RF MEMS 스위치 개발: 1. 용량형 shunt RF MEMS 스위치 개발(insertion loss ＜ 0.1dB, isolation ＞ 40 dBon/off ratio ＞500, 구동전압 : $3 {\sim} 8$ V. 1 million cycle test를 성공). 2. mm-wave 응용을 위한 용량형 shunt RF MEMS 스위치 제작: insertion loss ＜ 0.25 dB, isolation ＞ 30 dB at 35 GHz, 구동전압 : $10 {\sim}15$ V. 2 million cycle test를 성공리에 수행
${\bigcirc}$ 무선 LAN용 Planar antenna 개발: 1. 5.15-5.35 GHz, Gain＞0.5 dBi, Omni directional 2. Cellular/PCS, 무선랜 IEEE 802.11a/b 이중대역 설계 및 제작, 무지향성, gain＞ 0dBi, VSWR ＜2
${\bigcirc}$ PZT actuator를 이용한 tunable capacitor: 200％의 tuning ration at 6V, Q값 : 210 at 1 GHz
${\bigcirc}$ 이동차량에서 위성방송수신용 위상천이기 : 1(22.5, 45, 90, 180도), 3, 5-bit 위상 천이기 설계 및 제작: 3-bit 천이기(삽입손실＜-2dB, 반사손실＞10dB, phase error＜2도), 5-bit 천이기 (삽입손실＜5.25dB, 반사손실＞10dB, phase error＜3.5도)
${\bigcirc}$ Quartz 기판위에 띄운 spiral type의 MEMS 인덕터 개발: 인덕턴스 ＜ 50 nH, Q값 ＜ 55 at 3 GHz, 1 mil Au wire와 semi-auto wire bonding 기술을 이용하여 기판으로 띄운 high Q 인덕터: 인덕턴스 ＜ 40 nH, Q값 ＜ 120 at 4GHz${\bigcirc}$ 1.LIGA like Balun, multi-layer stacked Balun: 5 - 20 GHz, split magnitude＜ ${\pm} 1$ dB, split phase < $180 {\pm} 10^{{\Omega}}$, 2. PBG CPW을 이용한 power divider: Insertion loss< -0.7 dB, Return loss>-15 dB, Isolation>-20dB
${\bigcirc}$ 1. IMT 2000용 Tx BPF 개발: 세계 최초, I1.<-2.8 dB, BW>60 MHz, Fre. 1.92 GHz - 1.98 GHz, Atten.>-45 dB, 2. USPCS용 Tx BPF 개발: 국내 최초, 시계 두 번째 Il.<-2.8 dB, BW>60 MHz, Fre. 1.85 GHz- 1.91 GHz, Atten.>-42 dB
${\bigcirc}$ Two chip FBAR DPX ES 개발: 1. Tx to Antenna: IL.< -3.5 dB, BW> 60 MHz, Isolation>43 dB(at 1.93 - 1.99 GHz) 2. Antenna to Rx: IL<-4.8 dB, BW>60 MHz, Isolation >52 dB(at 1.85 - 1.91 GHz) 3. 크기: 11.8 mm ${\time}$ 5.8 mm ${\time}$ 1.6 ㎜ (유전체 듀플렉서의 체적의 18％)

Abstract ▼

In wireless telecommunication, the need for compact, higher performance, lower cost, and lower power mobile handsets with multi-band, multi-mode functionality is creating an opportunity for the use of RF MEMS technology. MEMS technology enables mass production of RF devices or systems through their

In wireless telecommunication, the need for compact, higher performance, lower cost, and lower power mobile handsets with multi-band, multi-mode functionality is creating an opportunity for the use of RF MEMS technology. MEMS technology enables mass production of RF devices or systems through their batch fabrication. A single chip RF transceiver, one of the key elements in the wireless communication system, can be realized by fabricating micro-scale RF passive components and integrating them with CMOS, MMIC′s, or RFIC′s.
For the RF MEMS technology being successful and commercialized, the RF MEMS technologies and components will be well developed and their commercialization will be promoted in the first phase. In the second phase, partially integrated modules and systems comprised of the fabricated RF MEMS components and RFICs will be developed and their commercialization will be promoted. In the third phase, the fully integrated modules and systems like a single chip transceiver will be developed and their commercialization will be promoted.

목차 Contents

• 제 1 장 연구개발과제의 개요...13
• 제 2 장 국내외 기술개발 현황...17
• 제 3 장 연구 개발 수행 내용 및 결과...20
• 3-1. 연구범위 및 수행방법...20
• 3-2. RF MEMS 스위치의 개발...26
• 3-3. RF MEMS tunable capacitor의 개발...34
• 3-4. Integrated inductor와 transformer의 개발...41
• 3-5. Integrated FBAR filter 와 duplexer의 개발...56
• 3-6. Integrated phase shifter 개발...70
• 3-7. Integrated EBG power divider 개발...78
• 3-8. Integrated Balun 개발...88
• 제 4 장 목표달성도 및 관련분야에의 기여도...100
• 4-1. 연구목표 및 평가의 착안점...100
• 4-2. 연구개발 결과...111
• 제 5 장 연구개발결과의 활용계획...116