Abstract ▼

Research on the optical characteristics and crystal growth mechanism of selectively grown thick-GaN crystals on Si-substrates using HVPE system
The experimental sequences for the selective growth of GaN on Si(111) substrates are as follows.
- GaN growth with GaN buffer grown by HVPE at low tem

Research on the optical characteristics and crystal growth mechanism of selectively grown thick-GaN crystals on Si-substrates using HVPE system
The experimental sequences for the selective growth of GaN on Si(111) substrates are as follows.
- GaN growth with GaN buffer grown by HVPE at low temperature (LT-GaN buffer) :
To confirm the optimum conditions for the growth of GaN, high temperature GaN were grown on sapphire substrates with LT-GaN buffer layers
- GaN growth with ZnO/LT-GaN combined buffer layer :
ZnO layers combined with LT-GaN were used to protect melt-back etching of Si substrate.
- Selective GaN growth with AlN buffer layer :
We modified HVPE growth system to be able to use TMGa and TMAl. AlN layers were grown on Si substrates by the MOCVD growth mechanism and followed by the selective growth of GaN with SiO2 mask pattern
- GaN layers were successfully grown on sapphire substrates with LT-GaN buffer layers grown by HVPE method. The LT-GaN, however, could not be able to protect melt-back etching of Si substrates.
- ZnO layers combined with LT-GaN could protect the melt-back etching of Si substrates and we could obtained GaN layers which have mirror like surface even there were some grain boundaries.
- With the use of stripe mask pattern of SiO2 , GaN crystals were selectively grown on AlN buffer layers which were grown on Si(111) substrates by MOCVD method in modified MO-HVPE growth system.

목차 Contents

• Ⅰ. 연구계획 요약문...3
• 1. 국문요약문...3
• Ⅱ. 연구결과 요약문...4
• 1. 국문요약문...4
• 2. 영문요약문...5
• Ⅲ. 연구내용...6
• 1. 서론...6
• 2. 연구방법 및 이론...7
• 3. 결과 및 고찰...10
• 4. 결론...19
• 5. 인용문헌...20