[보고서]나노기반 융합측정기술 개발

나노기반 융합측정기술 개발
Convergent Science and Technology for the Measurement in Nanoscale 원문보기

보고서 정보
주관연구기관	한국표준과학연구원 Korea Research Institute of Standards and Science
보고서유형	연차보고서
발행국가	대한민국
언어	한국어
발행년월	2011-10
과제시작연도	2011
주관부처	미래창조과학부 Ministry of Science, ICT and Future Planning
등록번호	TRKO201300015247
과제고유번호	1345165303
사업명	한국표준과학연구원연구운영비지원
DB 구축일자	2013-09-14
키워드	단전자 펌프.양자홀효과.저온검출기.미소열량계.큐비트.얽힘.양자기저상태.초전도 양자비트.single electron pump.QHE.low temperature detector.micro calorimeter.qubit.entanglement.quantum ground state.superconducting qubits.
DOI	https://doi.org/10.23000/TRKO201300015247

초록 ▼

Ⅲ. 연구개발의 내용 및 범위
- 양자전류 발생기 개발 과제; 2011년도는 총 3 년의 연구기간 중 2차 년도로서 세부 연구 목표로는 ‘병렬형 펌프 소자의 설계 및 연구’임.
- 그래핀 저항표준기 개발 과제; 2011년도는 과제수행 1차 년도로서 세부 연구 목표로는 ‘단일층 그래핀 분리, 선폭 5 ㎛ 이상의 Hall bar 소자 제작 및 특성 측정’ 임.
- 단일광자 기반 양자비트 얽힘 생성, 제어, 측정 기술을 개발하고 그 응용가능성을 개발하고 시험하는 것임.
- 고감도 온도센서 개발, 전방향 흡수체 안에서 알파붕괴에너지의 열 흡수 메커니즘 연구, 방사성 핵종 분석과 방사능 절대량을 측정하는 고 분해능 검출기 연구, 낮은 배경잡음 환경에서 희귀 핵반응 연구의 주요 검출수단 연구.
- 초 저잡음 측정 환경 및 설비 구축. 나노역학계를 제작 기술 및 역학계 운동 정밀 계측기술 개발. 나노역학계가 가질 수 있는 양자현상을 측정하는 기술을 개발.

Abstract ▼

Ⅲ. Contents and Scope
- The main contents of the research are to develop 10 pA-level current generators that can be alligned in parallel to increase the output current.
- The main contents of the research of this year are to fabricate monolayer graphene Hall bar with width ≥ 5 ㎛ and characterize its material and electrical properties.
- The generation, control, and detection of single-photon qubits; the development and testing of potential applications of quantum optical technology.
- Development of sensitive temperature sensors. Development of high resolution spectrometers to identify radionuclides and measure the absolute activity of each of radioactive isotopes. Study of heat transfer between detector components, a particle absorber and a temperature sensor. Provide detection mechanism for basic science research which needs high resolution detectors in low background measurements.
- Development of fabrication technique for the high quality mechanical structure. Development of precision measurement technique for the mechanical motion in the quantum regime. Establishment of the measurement facilities at ultra low noise environment.

목차 Contents

표지 ... 1
제출문 ... 3
보고서 요약서 ... 5
요약문 ... 7
SUMMARY ... 11
CONTENTS ... 15
목차 ... 17
제 1 장 서 론 ... 19
제 2 장 양자전기표준 소자 및 측정기술 개발 ... 20
제 1 절 개 요 ... 20
제 2 절 국내외 기술개발 현황 ... 25
제 3 절 연구개발 수행내용 및 결과 ... 30
제 4 절 연구개발 목표달성도 및 대외기여도 ... 53
제 5 절 연구개발 결과의 활용계획 ... 54
제 6 절 연구개발 과정에서 수집한 해외 과학기술 정보 ... 55
제 7 절 참고문헌 ... 55
제 3 장 단일광자 기반 양자광 기술 개발 ... 57
제 1 절 연구개발 과제의 개요 ... 57
제 2 절 국내외 기술 개발 현황 ... 60
제 3 절 단일광자 기반 양자광 ... 65
제 4 절 목표달성도 및 관련분야에의 기여도 ... 94
제 5 절 연구개발 결과의 활용계획 ... 95
제 6 절 참고문헌 ... 95
제 4 장 고 분해능 저온검출기 기술 개발 ... 102
제 1 절 개 요 ... 102
제 2 절 국내외 기술개발 현황 ... 107
제 3 절 연구개발수행 내용 및 결과 ... 111
제 4 절 연구개발 목표달성도 및 대외기여도 ... 139
제 5 절 연구개발 결과의 활용계획 ... 142
제 6 절 참고문헌 ... 144
제 5 장 양자기저상태 측정 및 제어기술 개발 ... 146
제 1 절 개 요 ... 146
제 2 절 고주파 나노역학계 설계 ... 152
제 3 절 극저온 무진동 정밀측정 시스템 설계 ... 162
제 4 절 목표달성도 및 관련분야에의 기여도 ... 169
제 5 절 연구개발 성과의 활용 계획 ... 170
제 6 절 참고문헌 ... 171

표/그림 (104)

표 Quantum metrology triangle for consistency test of three standards such as Josephson voltage U=f/KJ =hf/2e, quantum hall resistance RK=h/e2, and sinlge electron current I=ef.
표 The Hall resistance of a two-dimensional electron gas in an applied magnetic field . Rk = h/e2 = 25812.807 Ω within one part in 107. (Right) A simplified schematic resistance tracability chain: a multimeter calibrated at 12906.4035 Ω by the quantum Hall effect on the Rk/2 plateau is then used to know the resistance value of a component.
표 Quantum Hall Resistance (QHR) devices based on (a) semiconductor layer structure of GaAS and AlGaAs and (b) graphene.
표 (Left) Figures of precision and output current of single electron pump developed in world-wide. (Right) .Historical perspective in development of qunatum current source.
표 Projects world wide on quantum current standard.
표 Papers reported recently on single electron pump since 2007.
표 Domestic projects on single electron devices.
표 Papers reported recently on the graphene quantum Hall effect.
표 Schematic diagram showing the pumping process of electron capture and release. The potential profile is controlled by entrance and exit gate voltage Vg1 and Vg2. Both dc and rf signal is applied to gate 1 while only dc voltage is applied to gate 2.
표 (Left) SEM picture of sample. (Right) Schematic diagram showing measurement configuration.
표 Conductance vs. split gate voltages as a function of voltages applied to the middle gate. The voltage applied to the middle gate is increased from 0.2 V to 0.8 V from the right to the left.
표 The measurement parameters are following. Rf frequency f=50 MHz, rf power P=3.5 dBm, the dc voltage applied to gate 2 is Vg2=-1.5 V and middle gate voltage VM=0.3. (Left) Current plateau satisfies the relation I=nef where n=1,2,3...5. ef=8pA. (.Right) Trans-conductance dI/dVg2 density plot as a function of Vg1 and Vg2. Blue color represent high conductance while white color plateau of current. The numbers written on each plateau represents the number of electrons transferred per cycle.
표 Trans-conductance dI/dVg2 density plot for two different rf powers,3.5 dBm (left) and 5 dBm (right) at f=50 MHz. As rf power is increased the width of every current plateau is increased.
표 Current plateau for two different frequencies of 50 MHz and 90 MHz with power 3.5 dBm.
표 Trans-conductance dI/dVg2 density for two different rf frequency of 50 MHz (left) and 90 MHz (right) with rf power of 3.5 dBm.
표 (Left) Schematic structure diagram of SINIS hybrid turnstile pump device. (Right) Schematic energy stability diagram of SINIS hybrid turnstile pump. The red line is the pumping path in stability diagram.
표 Schematic diagram of our hybrid turnstile pump device.
표 Differential conductance dI/dVsd density plot as a function of bias voltage Vsd and gate voltage Vg either when device is in noram state (left) or in superconducting state (right). Brightness represents conductance. (Left) The red dotted lines are eye guide lines for Coulomb diamonds. The letter
표 Schematic diagram showing how multiple Andreev reflections happens via a Kondo resonance state between superconducting electrodes.
표 Blue and red lines represent conductance curve at zero bias limit and critical currents respectively as a function of gate voltages.
표 Typical Raman spectra of monolayer, bilayer, three layers, and four layers graphene on SiO2(300 nm)/Si substrate. Incident wavelength = 532 nm.
표 (a) Optical microscope image of graphene grown on Cu layer by CVD method. (b) Raman spectrum of graphene shown in (a). A circle in (a) denotes the position incident laser light irradiated on.
표 (a) A graphene Hall bar patterned by shadow mask method. The graphene was grown on Ni layer by the CVD method. (b) Raman spectrum of the Hall bar shown in (a). A circle in (a) denotes the position incident laser light irradiated on.
표 (a) I-V characteristics between source and drain of the Hall bar shown above. (b) ISD as a function of gate voltage at VSD = 0.5 mV.
표 A schematic diagram of the mechanical exfoliation process.
표 (a) Graphene flakes on a SiO2 (300 nm)/Si substrate. (b) A drawing of coordinated substrate.
표 Optical microscope images of graphenes. (a) Positioning of graphene flakes on a SiO2(300 nm)/Si substrate. (b) Deposition of Au/Cr electrodes on a graphene. (c) Etching of unnecessary parts of a graphene. A circles in (c) denote the position incident laser light irradiated on.
표 Raman spectrum of the graphene shown in Fig 2-3-19 (c).
표 (a) Gate voltage effect and (b) Raman spectrum of a graphene. Inset in (b) is an optical microscope image of the sample. A circle on graphene denotes the position incident laser light irradiated on.
표 A schematic diagram of micro-positioning of graphene flakes on a substrate.
표 (Left) Optical microscope images of graphene flakes on pre-marked SiO2(300 nm)/Si substrates. (Right) Raman spectra of the graphene flakes shown in the left images. Circles in the optical microscope images denote the positions incident laser light irradiated on.
표 Optical microscope images of graphene Hall bars. Circles denote the positions incident laser light irradiated on. An inset in the left image is the overall image of a device.
표 Optical microscope images of graphene Hall bars. Circles denote the positions incident laser light irradiated on. An inset in H1 image is a photograph of a graphene Hall bar device mounted on a puck for the measurement of quantum Hall effect.
표 Previous generation scheme for 4-photon 7-qubit cluster state using Mach-Zehnder-type interferometer.
표 Sagnac-type interferometer setup for path-qubit generation and measurement.
표 Tilted PFQ preserves optic axis in Sagnac interferometer.
표 Measurement results of OSA after birefringence compensation by BCQ.
표 Two-colorable 4-photon 7-qubit cluster state.
표 (a) X-measurement for path qubits and Z-measurement for polarization qubits; coincidence counts in 500 s. (b) Z-measurement for path qubits and X-measurement for polarization qubits; coincidence counts in 2000 s.
표 Expectation values of stabilizing operators and entanglement witness.
표 (a, a') Constant functions and (b～d') balanced functions of 2-bit input.
표 Measurement bases and measured coincidence counts in 1000 s for DJA execution of functions (a)-(d).
표 Success probabilities of DJA for function (a), (b), (c) and (d).
표 Success probabilities of DJA for previous works.
표 Generalized interferometer and visibility of control-qubit.
표 Schematic diagram C-SWAP operation for 3 photons via post-selection.
표 Experimental setup for C-SWAP operation and 4-photon generator.
표 Phase offset of interference fringes from fused path qubit shown with concurrent ambient temperature.
표 (a) before (b) after beam stabilizer installation.
표 Schematic of mode converter.
표 Field profile for (a) LP01 mode, (b) LP11 mode.
표 Transmission spectrum of mode converter.
표 Conversion efficiency of mode converter as electric signal amplitude is varied.
표 Actual mode converter.
표 Schematic for measurement of spatial mode entanglement in optical fibers.
표 Experimental setup.
표 Coincidence counts with varying phase of electric signal applied to (a) mode converter 1, (b) mode converter 2.
표 Detected values for quantum state tomography.
표 Density matrix for entangled photon pair in optical fiber.
표 Generation of 2002 state using Hong-Ou-Mandel effect.
표 Fidelity of output state after photon subtraction operation using on-off photodetector with efficiency η on ideal N00N state.
표 Youngs two-beam interferometer experiments with detector coupled through single-mode fiber: (a) setup, (b) fringe spacing l> SMF mode field diameter σ, (c) fringe spacing l

표 (A) Schematic diagram of low temperature detectors. (B) Heat transfer diagram. (C) Temperature response after energy absorption.

표 (A) R-T characteristics of TES. (B) Voltage-biased measuring circuit using a SQUID. (C) Cross-sectional view of TES. (D) Real image of TES (KRISS).

표 (A) M-T curve of MMC under a constant magnetic field. (B) Schematics of MMC. (C) Cross-sectional view of Au:Er with Au absorber. (D) Real image of a MMC setup with 50 μm ID SQUID loop (KRISS). SQUID junctions are not shown.

표 Detector setup of a low temperature alpha spectrometer using a meander MMC.

표 M vs. T of Au:Er meander sensor.

표 A schematic diagram of the alpha spectrometer using a meander MMC as separated-absorber geometry.

표 The alpha spectrum of a 238Pu source.

표 Thermal model between the temperature sensor and absorber.

표 (A) The initial rise of the normalized signals at 40 and 50 mK in the two experiments with either direct thermal contact or five gold wires to establish the thermal connection between the absorber and sensor. The field current was set at 140 mA for the two sets of measurements. (B) The rise time of the pulses in the two experiments. The solid line is the expected rise time for the electronic thermal conductance calculated from Wiedemann-Franz law with 408 μΩ as the measured resistivity at 4.2 K. The dashed line is a fit to the eye with a 1.6 mΩ contact between the absorber and the sensor.

표 Microscope image of the experimental setup.

표 Decay energy (Q) spectrum of a plutonium sample.

표 Typical signal of the experiment.

표 A schematic diagram of the meander-type MMC used in the 4π decay energy spectrometer.

표 Full spectrum of decay energy measurement with the 4π absorber.

표 226Ra spectrum using a Tailed Gaussian function.

표 A schematic diagram of the detector setup (not to scale).

표 The distribution of the signal size relative to the most frequent alpha signals on a logarithmic scale.

표 The 241Am alpha spectrum.

표 TES setup for photon detection.

표 Experimental setup for 4 cm diameter and 4 cm hight CaMoO4 crystal with a separate meander sensor.

표 Energy spectrum near 5 MeV using a 210Po source.

표 Energy spectrum near 5 MeV using a 241Am source.

표 User interface of the online DAQ program with optimal filtering algorithm.

표 Conceptual drawing of simple harmonic oscillator with mass and spring and quantum mechanical energy levels of harmonic oscillator.

표 Cantilever and doubly clamped beam structures

표 Coefficients with different boundary conditions.

표 Estimated fundamental frequency for various materials with the dimensions of 1 ㎛ in length, 100 ㎚ width, 100 ㎚ thickness.

표 Fabrication process of SiNx mechanical oscillator.

표 (a) Microscope image of SiNx oscillator. (b) Scanning electron micrography of SiNx oscillator.

표 Schematic diagram for the dielectric gradient force driving technique.

표 Actuate the oscillator with dielectric gradient force and detect the motion with laser reflection measurement technique.

표 Resonant behavior of 40 ㎛ SiNx nanomechanical resonator with high Q-factor(23,000).

표 Resonant frequency shift with DC bias.

표 Parametric gain of SiNx nanomechanical resonator.

표 Parametric gain with different phase between f0 and 2f0.

표 The effect of vibration isolation post.

표 Specification of RF shielding room.

표 Specification for vibration isolation post.

표 Floor plan of RF shield room.

표 Design for concrete block for 1st stage vibration isolation.

표 Schematics for vibration isolation table on the concrete block.

표 The aerial view of RF shielding room with 1st stage vibration isolation block.

표/그림 (104)

표 Quantum metrology triangle for consistency test of three standards such as Josephson voltage U=f/KJ =hf/2e, quantum hall resistance RK=h/e2, and sinlge electron current I=ef.

표 The Hall resistance of a two-dimensional electron gas in an applied magnetic field . Rk = h/e2 = 25812.807 Ω within one part in 107. (Right) A simplified schematic resistance tracability chain: a multimeter calibrated at 12906.4035 Ω by the quantum Hall effect on the Rk/2 plateau is then used to know the resistance value of a component.

표 Quantum Hall Resistance (QHR) devices based on (a) semiconductor layer structure of GaAS and AlGaAs and (b) graphene.

표 (Left) Figures of precision and output current of single electron pump developed in world-wide. (Right) .Historical perspective in development of qunatum current source.

표 Projects world wide on quantum current standard.

표 Papers reported recently on single electron pump since 2007.

표 Domestic projects on single electron devices.

표 Papers reported recently on the graphene quantum Hall effect.

표 Schematic diagram showing the pumping process of electron capture and release. The potential profile is controlled by entrance and exit gate voltage Vg1 and Vg2. Both dc and rf signal is applied to gate 1 while only dc voltage is applied to gate 2.

표 (Left) SEM picture of sample. (Right) Schematic diagram showing measurement configuration.

표 Conductance vs. split gate voltages as a function of voltages applied to the middle gate. The voltage applied to the middle gate is increased from 0.2 V to 0.8 V from the right to the left.

표 The measurement parameters are following. Rf frequency f=50 MHz, rf power P=3.5 dBm, the dc voltage applied to gate 2 is Vg2=-1.5 V and middle gate voltage VM=0.3. (Left) Current plateau satisfies the relation I=nef where n=1,2,3...5. ef=8pA. (.Right) Trans-conductance dI/dVg2 density plot as a function of Vg1 and Vg2. Blue color represent high conductance while white color plateau of current. The numbers written on each plateau represents the number of electrons transferred per cycle.

표 Trans-conductance dI/dVg2 density plot for two different rf powers,3.5 dBm (left) and 5 dBm (right) at f=50 MHz. As rf power is increased the width of every current plateau is increased.

표 Current plateau for two different frequencies of 50 MHz and 90 MHz with power 3.5 dBm.

표 Trans-conductance dI/dVg2 density for two different rf frequency of 50 MHz (left) and 90 MHz (right) with rf power of 3.5 dBm.

표 (Left) Schematic structure diagram of SINIS hybrid turnstile pump device. (Right) Schematic energy stability diagram of SINIS hybrid turnstile pump. The red line is the pumping path in stability diagram.

표 Schematic diagram of our hybrid turnstile pump device.

표 Differential conductance dI/dVsd density plot as a function of bias voltage Vsd and gate voltage Vg either when device is in noram state (left) or in superconducting state (right). Brightness represents conductance. (Left) The red dotted lines are eye guide lines for Coulomb diamonds. The letter

표 Schematic diagram showing how multiple Andreev reflections happens via a Kondo resonance state between superconducting electrodes.

표 Blue and red lines represent conductance curve at zero bias limit and critical currents respectively as a function of gate voltages.

표 Typical Raman spectra of monolayer, bilayer, three layers, and four layers graphene on SiO2(300 nm)/Si substrate. Incident wavelength = 532 nm.

표 (a) Optical microscope image of graphene grown on Cu layer by CVD method. (b) Raman spectrum of graphene shown in (a). A circle in (a) denotes the position incident laser light irradiated on.

표 (a) A graphene Hall bar patterned by shadow mask method. The graphene was grown on Ni layer by the CVD method. (b) Raman spectrum of the Hall bar shown in (a). A circle in (a) denotes the position incident laser light irradiated on.

표 (a) I-V characteristics between source and drain of the Hall bar shown above. (b) ISD as a function of gate voltage at VSD = 0.5 mV.

표 A schematic diagram of the mechanical exfoliation process.

표 (a) Graphene flakes on a SiO2 (300 nm)/Si substrate. (b) A drawing of coordinated substrate.

표 Optical microscope images of graphenes. (a) Positioning of graphene flakes on a SiO2(300 nm)/Si substrate. (b) Deposition of Au/Cr electrodes on a graphene. (c) Etching of unnecessary parts of a graphene. A circles in (c) denote the position incident laser light irradiated on.

표 Raman spectrum of the graphene shown in Fig 2-3-19 (c).

표 (a) Gate voltage effect and (b) Raman spectrum of a graphene. Inset in (b) is an optical microscope image of the sample. A circle on graphene denotes the position incident laser light irradiated on.

표 A schematic diagram of micro-positioning of graphene flakes on a substrate.

표 (Left) Optical microscope images of graphene flakes on pre-marked SiO2(300 nm)/Si substrates. (Right) Raman spectra of the graphene flakes shown in the left images. Circles in the optical microscope images denote the positions incident laser light irradiated on.

표 Optical microscope images of graphene Hall bars. Circles denote the positions incident laser light irradiated on. An inset in the left image is the overall image of a device.

표 Optical microscope images of graphene Hall bars. Circles denote the positions incident laser light irradiated on. An inset in H1 image is a photograph of a graphene Hall bar device mounted on a puck for the measurement of quantum Hall effect.

표 Previous generation scheme for 4-photon 7-qubit cluster state using Mach-Zehnder-type interferometer.

표 Sagnac-type interferometer setup for path-qubit generation and measurement.

표 Tilted PFQ preserves optic axis in Sagnac interferometer.

표 Measurement results of OSA after birefringence compensation by BCQ.

표 Two-colorable 4-photon 7-qubit cluster state.

표 (a) X-measurement for path qubits and Z-measurement for polarization qubits; coincidence counts in 500 s. (b) Z-measurement for path qubits and X-measurement for polarization qubits; coincidence counts in 2000 s.

표 Expectation values of stabilizing operators and entanglement witness.

표 (a, a') Constant functions and (b～d') balanced functions of 2-bit input.

표 Measurement bases and measured coincidence counts in 1000 s for DJA execution of functions (a)-(d).

표 Success probabilities of DJA for function (a), (b), (c) and (d).

표 Success probabilities of DJA for previous works.

표 Generalized interferometer and visibility of control-qubit.

표 Schematic diagram C-SWAP operation for 3 photons via post-selection.

표 Experimental setup for C-SWAP operation and 4-photon generator.

표 Phase offset of interference fringes from fused path qubit shown with concurrent ambient temperature.

표 (a) before (b) after beam stabilizer installation.

표 Schematic of mode converter.

표 Field profile for (a) LP01 mode, (b) LP11 mode.

표 Transmission spectrum of mode converter.

표 Conversion efficiency of mode converter as electric signal amplitude is varied.

표 Actual mode converter.

표 Schematic for measurement of spatial mode entanglement in optical fibers.

표 Experimental setup.

표 Coincidence counts with varying phase of electric signal applied to (a) mode converter 1, (b) mode converter 2.

표 Detected values for quantum state tomography.

표 Density matrix for entangled photon pair in optical fiber.

표 Generation of 2002 state using Hong-Ou-Mandel effect.

표 Fidelity of output state after photon subtraction operation using on-off photodetector with efficiency η on ideal N00N state.

표 Youngs two-beam interferometer experiments with detector coupled through single-mode fiber: (a) setup, (b) fringe spacing l> SMF mode field diameter σ, (c) fringe spacing l

표 (A) Schematic diagram of low temperature detectors. (B) Heat transfer diagram. (C) Temperature response after energy absorption.

표 (A) R-T characteristics of TES. (B) Voltage-biased measuring circuit using a SQUID. (C) Cross-sectional view of TES. (D) Real image of TES (KRISS).

표 (A) M-T curve of MMC under a constant magnetic field. (B) Schematics of MMC. (C) Cross-sectional view of Au:Er with Au absorber. (D) Real image of a MMC setup with 50 μm ID SQUID loop (KRISS). SQUID junctions are not shown.

표 Detector setup of a low temperature alpha spectrometer using a meander MMC.

표 M vs. T of Au:Er meander sensor.

표 A schematic diagram of the alpha spectrometer using a meander MMC as separated-absorber geometry.

표 The alpha spectrum of a 238Pu source.

표 Thermal model between the temperature sensor and absorber.

표 (A) The initial rise of the normalized signals at 40 and 50 mK in the two experiments with either direct thermal contact or five gold wires to establish the thermal connection between the absorber and sensor. The field current was set at 140 mA for the two sets of measurements. (B) The rise time of the pulses in the two experiments. The solid line is the expected rise time for the electronic thermal conductance calculated from Wiedemann-Franz law with 408 μΩ as the measured resistivity at 4.2 K. The dashed line is a fit to the eye with a 1.6 mΩ contact between the absorber and the sensor.

표 Microscope image of the experimental setup.

표 Decay energy (Q) spectrum of a plutonium sample.

표 Typical signal of the experiment.

표 A schematic diagram of the meander-type MMC used in the 4π decay energy spectrometer.

표 Full spectrum of decay energy measurement with the 4π absorber.

표 226Ra spectrum using a Tailed Gaussian function.

표 A schematic diagram of the detector setup (not to scale).

표 The distribution of the signal size relative to the most frequent alpha signals on a logarithmic scale.

표 The 241Am alpha spectrum.

표 TES setup for photon detection.

표 Experimental setup for 4 cm diameter and 4 cm hight CaMoO4 crystal with a separate meander sensor.

표 Energy spectrum near 5 MeV using a 210Po source.

표 Energy spectrum near 5 MeV using a 241Am source.

표 User interface of the online DAQ program with optimal filtering algorithm.

표 Conceptual drawing of simple harmonic oscillator with mass and spring and quantum mechanical energy levels of harmonic oscillator.

표 Cantilever and doubly clamped beam structures

표 Coefficients with different boundary conditions.

표 Estimated fundamental frequency for various materials with the dimensions of 1 ㎛ in length, 100 ㎚ width, 100 ㎚ thickness.

표 Fabrication process of SiNx mechanical oscillator.

표 (a) Microscope image of SiNx oscillator. (b) Scanning electron micrography of SiNx oscillator.

표 Schematic diagram for the dielectric gradient force driving technique.

표 Actuate the oscillator with dielectric gradient force and detect the motion with laser reflection measurement technique.

표 Resonant behavior of 40 ㎛ SiNx nanomechanical resonator with high Q-factor(23,000).

표 Resonant frequency shift with DC bias.

표 Parametric gain of SiNx nanomechanical resonator.

표 Parametric gain with different phase between f0 and 2f0.

표 The effect of vibration isolation post.

표 Specification of RF shielding room.

표 Specification for vibration isolation post.

표 Floor plan of RF shield room.

표 Design for concrete block for 1st stage vibration isolation.

표 Schematics for vibration isolation table on the concrete block.

표 The aerial view of RF shielding room with 1st stage vibration isolation block.

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