[보고서]KRISS Metrology 4 Green Energy

보고서 정보

주관연구기관

한국표준과학연구원
Korea Research Institute of Standards and Science

보고서유형

1단계보고서

발행국가

대한민국

언어

한국어

발행년월

2011-10

과제시작연도

2011

주관부처

미래창조과학부
Ministry of Science, ICT and Future Planning

등록번호

TRKO201300015253

과제고유번호

1345165309

사업명

한국표준과학연구원연구운영비지원

DB 구축일자

2014-01-13

키워드

녹색 에너지.열압전 변환.태양전지.효율평가.측정표준.green energy.thermo-piezo electric conversion.solar cell.efficiency evaluation.measurement standard.

DOI

https://doi.org/10.23000/TRKO201300015253

표 Technologies and scope of researches
표 Temperature stability of four plates in the system. CP: cold plate; GR: guarded ring; HP: hot plate; GP: guarded plate.
표 Schemaitc diagram of main measuring unit(a) and electrical conductivity measurement signal (b)
표 Enhanced evaluation system using DC power supply modules and relay circuit
표 Thermal conductivity measurements for CRM
표 Resistance(a) and voltage drop(b) of thermoelectric device at 40 ℃. An arrow in the left figure indicates the chosen applied input current (0.03 A).
표 Seebeck coefficient measurement of thermoelectric device at 40 ℃(a) and repeatability test based on 5-repeated measurements.
표 Uncertainty budgets for thermoelectric figure-of-merit evaluation
표 Schematic diagram of fabricating thermoelectric MEMS chip
표 Photographs of fabricating MEMS chip. (a) Au micropatterns formed via UV lithography (b) Pt-nanopattern formed via e-bema lithography (c) optic photograph after Si wet etching process (Si nitride membrane is left) ((c) top-view, (d) bottom-view). (e) SEM image of free-standing MEMS structure after etching the Si nitride membrane
표 Enlarged SEM image of nanopattern of MEMS structure. Pt nanoheaters are located above and below the Pt electrodes which are used as thermometer and Seebekc voltage electrodes. (scale bar: 10 μm)
표 Schematic diagram of the whole measurement system.
표 Photograph of MEMS chip mounted on PCB substrate. MEMS chip is wire-connected to the PCB substrate which is located on the cooling system.
표 I-V behavior of Bi2Te3 nanowire. (2-electrode measurement)
표 Results of resistance of each Pt thermometer with the current of the nanoheater. ΔT is generated with the application of current to nanoheater. The Joule heat is proportional to the square of current and the ΔT increases parabolically with the current increasing.
표 Variations of Pt resistance with the substrate temperature. The resistance of Pt line linearly increases with temperature.
표 Variation of Seebeck voltage for the two nanoheaters. The sign of Seebeck voltage depends upon the nanoheater being used.
표 Software for the thermoelectric measurement based on MEMS chip. Seebeck coefficient, electrical conductivity, and thermal conductivity can be measured.
표 Results of Seebeck coefficient of Bi2Te3 nanowire with temperature in the range of 4 K to 400 K. The measurements were carried out for the nanowire in the as-prepared state and after heatreatment at 200 ℃and 400 ℃.
표 Results of electrical conductivity of Bi2Te3 nanowire with temperature in the range of 4 K to 400 K. The measurements were carried out for the nanowire in the as-prepared state and after heatreatment at 200 ℃and 400 ℃.
표 Variation of thermopower factor of Bi2Te3 nanowire with the temperature in the range of 4 K to 400 K.
표 Vapor pressure measurement system
표 Schematic of MOCVD system
표 MOCVD system
표 Process variables for Bi2Te3 deposition
표 Process variables for Sb2Te3 deposition
표 SEM image of Bi2Te3 thin films on SiO2 substrate.
표 XRD patterns of Bi2Te3 films
표 HRTEM image and SAED pattern of Bi2Te3 films.
표 Vapor pressure of Sb(Et)3 precursor
표 Vapor pressure of Sb(i-Pr)3 precursor
표 Summation of measured vapor pressure of Antimony precursors
표 SEM image of Sb2Te3 thin films on SiO2 substrate.
표 SEM image of Sb2Te3 thin films on Si-wafer.
표 EDAX spectrum of Sb2Te3 thin films on SiO2 substrate.
표 EDAX spectrum of Sb2Te3 thin films on Si substrate.
표 XRD patterns of Sb2Te3 films
표 Before renovation
표 After renovation of vacuum line
표 K-20 temperature monitoring (270 → 80 K)
표 Schematic of Seebeck chamber
표 Schematic and specifications of SThM
표 SThM system
표 The unit cell atomic structure for calculation of lattice thermal conductivity of graphene.
표 Temperature of the (left) hot, (center) center, and (right) cold regions during the molecular dynamics simulations.
표 Temperature profile along the x axis where the temperature gradient is applied.
표 Heat fulx (top) fluctuation and (bottom) in statistical average along the x and y axis.
표 A snapshot in atomic motion of (top) graphene and (bottom) graphene nanoribbon in the thermal steady state.
표 Various unit cell structures of the graphene and graphene nanoribbons.
표 Calculated lattice thermal conductivity of graphene for various unit cell sizes.
표 Calculated lattice thermal conductivity of graphene nanoribbons for various wide sizes.
표 Calculated lattice thermal conductivity with respect to the graphene nanoribbon widths at room temperature.
표 Atomic structure of Bi2Te3.
표 (left) Electronic density of states of Bi2Te3. (right) The valence states of Bi and Te atoms.
표 Electronic density of states of Bi2Te3 near the band gap.
표 Band structures of Bi2Te3 without spin-orbit coupling (left) in full energy scale and (right) near the band gap.
표 Band structures of Bi2Te3 (left) without spin-orbit coupling and (right) with spin-orbit coupling near the band gap.
표 Calculated density-of-states, electrical conductivity, electronic thermal conductivity, and Seebeck coefficient as functions of the Fermi energy (left) without spin-orbit coupling and (right) with spin-orbit coupling.
표 Atomic structures of (a) Bi2Te3, (b) inversion domain boundary (IDB), and (c) Te interlayer (IL).
표 Calculated density-of-states, electrical conductivity, electronic thermal conductivity, and Seebeck coefficient as functions of the Fermi energy for (left) Bi2Te3 IDB and (right) Bi2Te3 IL structures with spin-orbit coupling.
표 Pre-tests for calculating the deflection, induced by AFM probe, during the bending of nanowire.
표 Fabrication processes for cantilever type and bridge type specimens.
표 SEM micrographs of cantilever type and bridge type specimens.
표 AFM images of cantilever type and bridge type specimens.
표 Schematic illustrations showing (a) test specimen, (b) current measurement using conductive AFM technique, and (c) current measurement using externally connected amperemeter or voltmeter.
표 (a) AFM image of bridge type specimen and (b) photo of bridge type specimen, designed for external current/voltage measurement.
표 SEM micrographs showing the cantilever type specimens, designed for embodying Ohmic contact.
$AFM images of the ZnO test specimen: (a) before fracture and (b) after fracture; (c) force-displacement curve measured.$ 표 AFM images of the ZnO test specimen: (a) before fracture and (b) after fracture; (c) force-displacement curve measured.
표 Force-deflection curve of ZnO nanowire.
표 The variation in the I-V characteristic of ZnO nanowire with contact force (i.e., strain).
표 Current generation during the bending of (a) GaN and (b) ZnO nanowires.
표 (a) SEM micrographs of ZnO nanowire array sample and (b) measured current map (set point=400 nN, scanning speed=30 μm/s).
표 Effect of scanning speed on the current generation: (a) mean current and (b) maximum current (set point=500 nN).
표 Effect of set point on the current generation: (a) mean current and (b) maximum current (scanning speed=30 μm/s).
표 Finite element analysis results on the bending of cantilever type ZnO nanowire specimen: (a) boundary condition, (b) Von Mises stress distribution, and (c) strain distribution.
표 Finite element analysis results on the bending of cantilever type ZnO nanowire specimen: (a) voltage potential distribution, (b) voltage potential at z=700 nm, and (c) max. and min. voltage potentials at z=700 nm.
표 Finite element analysis results on the bending of bridge type ZnO nanowire specimen: (a) boundary condition, (b) voltage potential distribution, and (c) max. and min. voltage potentials.
표 Generation and development of solar cell industry
표 Outline of the fabrication process of CIGS thin film solar cell
표 Outline of CIGS solar cell metrology
표 Experimental scheme of the 1st year for the quantification of CIGS films
표 Experimental scheme of the 2nd year
표 Cutting of the wafer and the positions of the specimens used for certification of CIGS CRMs.
표 The general description of samples for certification of CIGS CRMs.
표 Enriched isotopic standards used for double spike IDMS.
표 Validation of IDMS method for analysis of copper, indium, gallium and selenium in aqua solution.
표 Determined value for Copper in CIGS-1 by ID-ICP/MS
표 Certification results of the thin film CRMs.
표 Analytical results of the thin film samples for pilot study.
$Mole fraction of the thin film samples.$ 표 Mole fraction of the thin film samples.
표 Determination of secondary ion intensity(Ii) by total number counting method
표 sensitivity factors of the constituent elements of in SIMS dpeth profiling of a standard CIGS film.
표 the relative ratio of the RSFs described in Table 3-3-1
표 Quantification results of the test CIGS specimen.
표 Quantification results of the test CIGS specimens by ICP-MS
표 SIMS depth profile of a standard CIGS thin film by 2 keV O +2 ion beam for the determination of the relative sensitivity factors.
표 AR-RSFs of Cu, In, Ga and Se in a SIMS depth profile of a CIGS standard film by 2 keV O +2 ion beam.
표 Relative ratio (Rj) of AR-RSFs of Cu, In, Ga and Se in a SIMS depth profile of a CIGS standard film by 2 keV O +2 ion beam.
표 linear fitting result between the compositions measured by ICP-MS and those by SIMS using 2 keV oxygen ions
표 The compositions of the four CIGS films measured by SIMS depth profiling using 2 keV O +2 ion beam (at. %)
표 linear fitting result between the compositions measured by ICP-MS and those by SIMS using 2 keV oxygen ions
표 Quantification results by 5 keV Cs+ ion beam (at. %)
표 linear fitting result between the compositions measured by ICP-MS and those by SIMS using 5 keV Cs ions
표 linear fitting result between the compositions measured by ICP-MS and those by SIMS using 5 keV Cs ions
표 conversion of an original SIMS depth profile of a CIGS thin film to a compositional depth profile
표 SIMS compositional depth profiles of various CIGS films with different compositions of Ga and In.
표 Typical I-V characteristics of a photovoltaic device.
표 Solar simulator-based solar cell calibration setup in KRISS.
표 Spatial irradiance distribution of solar simulator in the KRISS solar cell calibration setup.
표 Uncertainty budget of short-circuit current measurement for a CIGS solar cell sample (estimation).
표 (a) Band diagram of CIGS solar cell, sparce charge region (SCR), quasi-netrual region (QNR) (b) Cross section of CIGS device2)
표 Setup of IPES, XPS, UPS in a vacuum chamber
표 detection of impurities, such as, C, O and Na on CdS film grown on CIGS film as a function of growth time
표 UPS spectra of CdS film on CIGS (left) and IPES spectra after background subtraction (right). valence band and conduction band offset were described
표 UPS spectra after etching of CIGS/CdS UPS (left) and IPES spectra after background subtraction (right). valence band and conduction band offset were described
표 band alignment diagram obtained by the two conditions. the grayed regions are the transition layer.
표 increase of bandgap energy by formation of silicon quantum dots
표 formation of silicon quantum dots by various methods
표 example of bandgap engineering by silicon quantum dots
표 Outline of the Si quantum dot solar cell and the important experimental parameters for the optimization of solar effiency
표 The effect of B concentration for the improvement of conversion efficiency
표 The effect of chemical stoichiometry of SiOx layer for the improvement of conversion efficiency
표 The effect of thickness of quantum dot layer on the conversion efficiency
표 Method to increase the electron conductivity by introduction of interface poly silicon layers of about 10 nm.
표 Structure and the best I-V characteristics of the Si quantum dot solar cell
표 change of conversion efficiency of Si quantum dot solar cells developed by KRISS from the beginning of the research.

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