Abstract ▼

3. Research Results
- Passivation of bottom CZTS/Mo interface using a patterned dielectric (SiO2) layer
- Great enhancement of V_oc, FF and efficiency after passivation of bottom interface
- Optimization of the dimension of the bottom passivation layer (thickness, pitch size, and

3. Research Results
- Passivation of bottom CZTS/Mo interface using a patterned dielectric (SiO2) layer
- Great enhancement of V_oc, FF and efficiency after passivation of bottom interface
- Optimization of the dimension of the bottom passivation layer (thickness, pitch size, and diameter); further optimization in progress
- Enhancement in efficiency over 350% after passivation in some device batches.
- V_oc deficit of 0.616 V (comparable to that of the world-record CZTSSe which has a V_oc deficit of 0.617 V)
- Deposition of absorber layers and improvement of their physical properties
- Control of deposition conditions to produce Cu-poor, Zn-rich composition for high-efficiency solar cells
- Study of the effect of annealing on Sn loss and the thickness of MoSe₂ depending on the temperature and Se vapor
- Improved device performance with controlled thickness of CdS buffer
- Passivation of top interface of CZTS
- Application of a thin dielectric layer (Al₂O₃) on top of CZTS for passivation of the top interface of CZTS with a buffer
- An enhancement in V_oc as a result of passivation achieved
- Deposition of buffer layers and improvement of their physical properties
- ZnMgO buffer layer was deposited using atomic layer deposition
- Enhanced efficiencies of CIGS solar cells with Cd-free ZnMgO buffers
- Transparent conducting oxide
- Development of nanosphere lithography and dry-etching process to produce Al:ZnO with nano-wire structure