초록

○ SiC 박막 표면에 그래핀 형성의 촉매인 Ni 박막을 증착한 후 저전압(10 kV 이하)의 전자빔을 조사하여 SiC 박막 표면에 그래핀 에피막을 유도하였음.
○ 고전압(1 MV)의 전자빔을 조사하여 SiC 단결정 내에 전자스핀 보유 결함을 생성하고 이를 Magnetization 및 Photoluminescence 측정을 통해 확인함.

(출처 : 보고서 요약서 3p)

Abstract ▼

We have developed a new process methodology to form a graphene epilayer on the surface of a single crystal substrate or a thin film of SiC at fairly low temperature, compared with the conventional thermal annealing method in ultra high vacuum, by irradiating electron beam (e-beam) directly on the su

We have developed a new process methodology to form a graphene epilayer on the surface of a single crystal substrate or a thin film of SiC at fairly low temperature, compared with the conventional thermal annealing method in ultra high vacuum, by irradiating electron beam (e-beam) directly on the surface.
We have also established a very simple and energy-efficient experimental method to grow high-quality graphene epilayers on single-crystal 4H- and 6H-SiC substrates just by capping the SiC surface with a Mo-Plate during vacuum annealing
We could identify the mechanism of graphene epilayer formation and its stacking structure by performing the structural and electrical characterization of the formed layer depending on the amount of e-beam irradiated.
We have observed the nano-welding phenomenon at cross junctions of Ag nanowires when UV light or e-beam was irradiated. With this nano-welding, the electrical and mechanical properties of Ag nanowire network were found to be improved quite noticeably.
Our observations and findings are believed to contribute greatly to develop the future novel electronic devices operating in hostile environments such as high-temperature, high-voltage, high-current, and heavy radiation. Especially, the method to grow a high-quality graphene epilayer on a sapphire substrate will make it possible to fabricate a graphene substrate at low costs, which is essential for the actual commercialization of graphene-based electronic and optoelectronic devices. Also, the nano-welded Ag nanowire network electrode with high optical transparency and low sheet resistance is expected to replace the current Indium Tin Oxide (ITO) transparent electrode.
Finally, we have established the experimental method for creating localized point defects with electron spin unfaired inside Hexagonal-SiC substrates by irradiating e-beam at high acceleration voltage. These point defects induced in Hexagonal-SiC substrate can be used as qubits for quantum information applications.

(출처 : SUMMARY 7p)

목차 Contents

• 표지 ... 1
• 제 출 문 ... 2
• 보고서 요약서 ... 3
• 요 약 문 ... 4
• SUMMARY ... 7
• CONTENTS ... 8
• 목차 ... 9
• 제1장 연구개발과제의 개요 ... 10
• 제1절 연구개발의 목적 및 필요성 ... 10
• 제2절 연구개발의 목표 및 내용 ... 15
• 제2장 국내외 기술개발 현황 ... 18
• 제1절 국내 연구개발 현황 ... 18
• 제2절 국외 연구개발 현황 ... 19
• 제3장 연구개발 수행 내용 및 결과 ... 21
• 제1절 연구개발 수행 내용 ... 21
• 제2절 연구개발 수행 결과 ... 41
• 제4장 목표 달성 및 관련 분야에의 기여도 ... 72
• 제1절 연구목표 달성 정도 ... 72
• 제2절 관련 분야에의 기여도 ... 75
• 제5장 연구개발결과의 활용계획 ... 77
• 제1절 연구개발결과의 활용도 ... 77
• 제2절 추가 연구개발의 필요성 ... 78
• 제6장 연구개발과정에서 수집한 해외과학기술정보 ... 80
• 제1절 관련분야 해외 과학기술 동향 ... 80
• 제7장 참고문헌 ... 86
• 연구성과(연구사업지원시스템 입력성과) ... 89
• 끝페이지 ... 98