초록 ▼

• 본 과제는 “초박형 System-On-Skin 소자용 저차원 무기물 전자소재 및 공정 연구‘를 연구 목표로 함.
• 무기물 기반 저차원 active 소재 및 소자 개발
▪ layer-by-layer 구조(ZnO/Al₂0₃)의 박막 성장 기술 확보 및 고이동도/고신뢰성 TFT 소자 제작
▪ Zno/CdS 기반의 다층 광학샌서용 박막 기술 확보 및 광센서 제작
• Self-sustain을 위한 저차원 무기물 기반 passive 소재 및 에너지 소자 개발
▪

• 본 과제는 “초박형 System-On-Skin 소자용 저차원 무기물 전자소재 및 공정 연구‘를 연구 목표로 함.
• 무기물 기반 저차원 active 소재 및 소자 개발
▪ layer-by-layer 구조(ZnO/Al₂0₃)의 박막 성장 기술 확보 및 고이동도/고신뢰성 TFT 소자 제작
▪ Zno/CdS 기반의 다층 광학샌서용 박막 기술 확보 및 광센서 제작
• Self-sustain을 위한 저차원 무기물 기반 passive 소재 및 에너지 소자 개발
▪ 플라즈마 기반 ALD를 이용한 TiO_X passive 소재 합성 기술 개발
▪ 저온 공정 기반 복합 passive소재를 적용한 고효율 유연 페로브스카이트 태양전지 소자 개발
• 초경량/초박형 소자 용 기판 공정 및 미세구조 분석기술 개발
▪ ITO 전극 비정질화:UV/Ozon 처리된 parylene 기판 적용시 열화 억제 기술 개발
▪ 압전체 물질에서 strain에 따른 나노크기의 flexoelectricity의 압정성 크기 제어 및 상관관계 분석 기술 확보

(출처 : 보고서 요약서 3p)

Abstract ▼

Purpose
In this research, we are developing "Low dimensional inorganic electronic materials and fabrication process for ultrathin System-On-Skin devices". In details, low-dimension inorganic active materials (superlattice/2D-layered/oxide nano-films) and devices, low-dimension inorganic passive m

Purpose
In this research, we are developing "Low dimensional inorganic electronic materials and fabrication process for ultrathin System-On-Skin devices". In details, low-dimension inorganic active materials (superlattice/2D-layered/oxide nano-films) and devices, low-dimension inorganic passive materials and energy devices for self-sustain, ultrathin-substrate process technology, and AFM-based analysis methods will be studied.

contents
1. Development of a low dimension active material and device on inorganic substance
A. low dimension inorganic layered material and oxide thinfilm material technique
- High reliability/high mobility oxide TFT device with a superlattice structure based on layer-by-layer membrane technique
- Ultra thin top-gated chalcogenide device using high-k gate dielectric engineering
- Oxide nano-film TFT device through solution process based on UV photoactive
B. Piezoelectric, Flexoelectric type pressure sensor with superlattice and hetero structure
- Piezoelectric material and pressure sensor with advanced concept SO/IO structure
- Piezoelectric film on UV photoactive & integration of pressure sensor
2. Passive material and device on low dimension inorganic substance for self-sustain
A. Development of perovskite type energy material with ultra thin structure
- High efficient perovskite energy device using novel composite perovskite material and low dimension passive material
- Fexible solar cells production for realization of energy device with ultra thin structure
B. Ultra thin high-k gate insulator film material for low power drive
- Formation technique of metal oxide gate insulator film based on solution process
- Development of evaluation technique of ultra thin gate insulator film and environmental factor identified reliability of flexible/bending test
C. Transparent flexible electrode material on low dimension inorganic substance
- Ultra thin expansion type transparent electrode material based on inorganic substance
3. Analysis technique of substrate process & microstructure for ultra light/ultra thin device
A. Ultra light/ultra thin substrate process technique using orthogonal polymer material
- Design & formation technique of orthogonal polymer layer for ultra light substrate
- Imperceptible device process technique based on low dimension inorganic substance for 1μm class ultra thin substrate
B. Analysis of multi-dimension electric property by multi-dimension AFM technique
- Analysis technique of electron distribution on surface/interface and flexoelectricity/piezoelectricity
- Multi dimension electric analysis method through combination of various AFM mode

Developement results
Studied on the ultra thin electrical materials and the process are receiving attention as next generation electronic device technologies. In this laboratory, we would like to develop oxide/layered semiconductor, which has originality, by appling a feasible new concept. Quantum confined effect & 2DEG channel by low-dimensional structure have not yet been tried and it shows highly feasible through basic experiments. also, low-dimensional inorganic semiconductor has high portention as high-sensitivity sensor. therefore, this study can be obtained results of world-class research and original patent

Expected Contribution
As a concept of electric device has changed from rigid substrate to transparent/flexible and implantable/imperceptible. So, secure of origin source and process technique about the technology is expected to supply high quality human resources at this field and obtain national competitiveness of electric device using established technology superiority. This research facilitate high level research achievement and securement of intellectual property rights as well as this research can create a new market of convergence field.

(출처 : SUMMARY 5p)

목차 Contents

• 표지 ... 1
• 제 출 문 ... 2
• 보고서 요약서 ... 3
• 요 약 문 ... 4
• SUMMARY ... 5
• 목차 ... 6
• 1. 연구개발 목표 및 내용 ... 7
• 가. 최종 목표 ... 7
• 나. 단계목표 ... 8
• 다. 당초 목표의 수정․보완(중요 연구변경) 사유 ... 9
• 라. 1단계 연차별 연구목표 및 내용 ... 10
• 2. 연구 추진전략 및 방법 ... 11
• 3. 주요 연구개발 결과 ... 16
• 가. 목표달성도 ... 16
• 나. 대표적 연구업적 ... 78
• 다. 기타 연구성과 ... 79
• 4. 연구수행에 따른 문제점 및 개선방향 ... 79
• 5. 연구개발성과 현황 ... 79
• 6. 국가과학기술종합정보시스템에 등록한 연구시설․장비 현황 ... 92
• 7. 기타사항 ... 92
• 끝페이지 ... 94