초록 ▼

○ AlN-rod 및 SiOx 투명전극을 적용한 고효율 마이크로 LED 기술 개발
○ 오믹접촉이 가능한 UV-C transparent 전극 개발 및 UV-C LED 기술 확보
○ 전도성 채널을 갖는 광대역 OMO 투명전극 개발 (유연소자로의 확장성 확보)
○ ZnO/Ag/ZnO 기반 유연 투명전극을 갖는 고효율 실내 유기태양전지 개발
○ 전도성 채널을 이용한 전도성 DBR 전극 개발
○ 또한, 위상절연체 (topological insulator) 제작, 암세포 검출을 위한 미세 유체 3D 쿼츠-나노홀 어레

○ AlN-rod 및 SiOx 투명전극을 적용한 고효율 마이크로 LED 기술 개발
○ 오믹접촉이 가능한 UV-C transparent 전극 개발 및 UV-C LED 기술 확보
○ 전도성 채널을 갖는 광대역 OMO 투명전극 개발 (유연소자로의 확장성 확보)
○ ZnO/Ag/ZnO 기반 유연 투명전극을 갖는 고효율 실내 유기태양전지 개발
○ 전도성 채널을 이용한 전도성 DBR 전극 개발
○ 또한, 위상절연체 (topological insulator) 제작, 암세포 검출을 위한 미세 유체 3D 쿼츠-나노홀 어레이 제작, UV-doped ZnO 기반의 TFT 연구, IGZO 및 그래핀 TFT 기반의 바이오센서 제작, Al 나노링 기반의 플라즈모닉스 연구 등의 부가적인 연구성과 도출

(출처 : 보고서 요약서 3p)

Abstract ▼

□ Purpose
In this project, we propose to gain the in-depth understanding and full utilization of the so-called glass-based transparent conductive electrode (G-TCE). By using an electrical field to control defects in wide-bandgap (WB) materials, such as SiO₂, we can create a current pat

□ Purpose
In this project, we propose to gain the in-depth understanding and full utilization of the so-called glass-based transparent conductive electrode (G-TCE). By using an electrical field to control defects in wide-bandgap (WB) materials, such as SiO₂, we can create a current path in TCE films and finally make a direct ohmic contact to various semiconductors while maintaining high transmittance. We will fully identify the conduction (or ohmic) mechanisms in the G-TCEs on semiconductors and verify their feasibility and usefulness through a wide range of device applications. In the long term, we will create new areas of technology that can break the boundary between conductors and insulators by expanding the G-TCE concept.

□ contents
TCEs with good electrical conductivity and high optical transmittance are key components in advanced, high-performance opto-electronic devices, including light-emitting diodes (LEDs).
However, conventional indium tin oxide (ITO) and its alternatives have always necessitated a trade-off between conductivity and transmittance, thus limiting their practical applications. In this project, we propose indium-free, G-TCEs using WB materials, such as SiO₂ (E_g = 8.9 eV), and we investigate the conduction mechanisms between the metal and the semiconductor via the G-TCE. We also apply these G-TCEs to various optoelectronic devices (e.g., nitride-LEDs, micro-LEDs, OLEDs, oxide-TFTs, and transparent RRAMs) to improve their performance, following an in-depth study of the physics of the G-TCE. Some main tasks are as follows:
1. Optimize G-TCE films with top electrodes that have different work functions and fully understand the conduction mechanisms of these materials. We will investigate the electrodynamics at the interface between the metal and the semiconductor via the G-TCE to identify the ohmic mechanism.
2. Realize highly efficient UV LEDs using G-TCEs. We will produce a quantum leap in the external quantum efficiency of UV-C LED (up to 30% @ 280 nm; currently ~15%), through direct ohmic contacts to p-Al_xGa_1-xN (x > 0.5) using the G-TCE, in consideration of the current injection and spreading effects.
3. Realize highly dense micro-LEDs using G-TCEs. We will fabricate high-performance micro-LEDs (e.g., pixel size < 10 μm, fill factor ~100%, injection current <30 A/cm², no heat loss) using local injections of currents via the G-TCE.
4. Realize highly transparent OLED/oxide-TFT display modules using G-TCEs. We will also improve the current injection in conventional OLEDs and oxide TFTs by engineering the energy levels of defects in the G-TCE films, which will eventually lead to all transparent OLED/oxide-TFT display systems.

□ Developement results
∎ Phase I : more than 7 papers in the top 10% of JCR journals, 6 patents
∎ Phase II : more than 8 papers in the top 10% of JCR journals, 7 patents
∎ Phase III : more than 9 papers in the top 10% of JCR journals, 8 patents, 2 technology transfer
※ The number of global professional workers with knowledge and capability that will be trained through this project : 12 PhD students and 16 M.Sc. students.

□ Expected Contribution
Complete understanding of the conduction mechanisms of various G-TCE films and their successful applications at the device level will lead to a technical breakthrough in various opto-electronic areas, including solid-state lighting and display. Our indium-free G-TCEs will also offer a cost-effective, ultimate solution to trade-offs between electrical conductivity and optical transmittance, such as ITO replacements and UV-C transparent electrodes, which are technically unavailable at the present stage.

(출처 : SUMMARY 5p)

목차 Contents

• 표지 ... 1
• 제출문 ... 2
• 보고서 요약서 ... 3
• 국문 요약문 ... 4
• SUMMARY ... 5
• 목차 ... 6
• 1. 연구개발 목표 및 내용 ... 7
• 가. 최종목표 ... 7
• 나. 단계목표 ... 7
• 다. 당초 목표의 수정·보완(중요 연구변경) 사유 ... 8
• 라. 2단계 연차별 연구목표 및 내용 ... 9
• 2. 연구 추진전략 및 방법 ... 10
• 3. 주요 연구개발결과 ... 20
• 가. 계획대비 달성도 ... 20
• 나. 대표적 연구업적 ... 26
• 다. 현 단계 달성된 연구결과의 세계적 연구 위상 ... 26
• 라. 기타 계획하지 않은 연구성과 ... 29
• 마. 연구역량 향상 정도 ... 32
• 바. 세계적 연구리더로서 연구책임자의 성장 정도 ... 33
• 4. 연구수행에 따른 문제점 및 개선방향 ... 33
• 5. 연구개발성과 현황 ... 33
• 6. 국가과학기술종합정보시스템에 등록한 연구시설·장비 현황 ... 48
• 7. 기타사항 ... 48
• 끝페이지 ... 49