![Summary of systematic studies of photoresponse VOx/doped Si samples using a combination of transport and nano-optical experiments. Panel 13a: 2-probe transport measurements of the resistance of films with various Si substrate doping levels in dark and light (5 mW, 633 nm red light) settings. Panel 13b: 2-probe transport measurements of the resistance of films with various Si substrate doping levels in dark and light (5 mW, 10 μm infrared light) settings. Panel 1c: Normalized near-field contrast for Si (n=1018 cm-3) sample in dark setting (top row), illuminated under 5 mW green light setting (middle row), and the contrast change [(NFlight-NFdark)/NFdark] between the dark and illuminated images (bottom row). Panel 1d: Normalized near-field contrast for Si (n=1017 cm-3) sample in dark setting (top row), illuminated under 10 mW green light setting (middle row), and the contrast change [(NFlight-NFdark)/NFdark] between the dark and illuminated images (bottom row)](https://nrms.kisti.re.kr/bitextimages/TRKO202000003404/TRKO202000003404_49_image_1.png "Summary of systematic studies of photoresponse VOx/doped Si samples using a combination of transport and nano-optical experiments. Panel 13a: 2-probe transport measurements of the resistance of films with various Si substrate doping levels in dark and light (5 mW, 633 nm red light) settings. Panel 13b: 2-probe transport measurements of the resistance of films with various Si substrate doping levels in dark and light (5 mW, 10 μm infrared light) settings. Panel 1c: Normalized near-field contrast for Si (n=1018 cm-3) sample in dark setting (top row), illuminated under 5 mW green light setting (middle row), and the contrast change [(NFlight-NFdark)/NFdark] between the dark and illuminated images (bottom row). Panel 1d: Normalized near-field contrast for Si (n=1017 cm-3) sample in dark setting (top row), illuminated under 10 mW green light setting (middle row), and the contrast change [(NFlight-NFdark)/NFdark] between the dark and illuminated images (bottom row)")
![(a) Modeling of the VO2/AlN cross section in [101] view direction for monoclinic VO2 and [100] view direction for AlN. (b) Modeling of the VO2/TiO2 cross section in [110] view directions for rutile VO2 and TiO2. Red rectangles mark film-substrate interface region with corresponding lattice parameters and, thus, define strain in the film](https://nrms.kisti.re.kr/bitextimages/TRKO202000003404/TRKO202000003404_53_image_1.png "(a) Modeling of the VO2/AlN cross section in [101] view direction for monoclinic VO2 and [100] view direction for AlN. (b) Modeling of the VO2/TiO2 cross section in [110] view directions for rutile VO2 and TiO2. Red rectangles mark film-substrate interface region with corresponding lattice parameters and, thus, define strain in the film")
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| 주관연구기관 | 한국전자통신연구원 Electronics and Telecommunications Research Institute |
|---|---|
| 연구책임자 | 송윤호 |
| 참여연구자 | 김현탁 , 구본태 , 이진호 , 김상훈 , 조성우 , 테티아나 , 정순규 , 최영규 , 김태은 , 최민근 , 조진철 , 손지민 , 고소영 , 김혜리 , 박문양 , 어익수 , 김성도 , 박민 , 백영석 , 김덕환 , 장준영 , 한선호 , 최장홍 , 이자열 , 김기수 , 고상춘 , 박종문 , 전치훈 , 유성욱 , 전승진 , 원종일 , 박병무 , 김규열 , 이효현 , 양용석 , 정우석 , 박정우 , 김귀동 , 고현성 , Dimitri Basov , Alex McLeod , Aron Sternbach , Mumtaz Qazilbash , Zhen Xing , David Lahneman |
| 보고서유형 | 연차보고서 |
| 발행국가 | 대한민국 |
| 언어 | 한국어 |
| 발행년월 | 2019-12 |
| 과제시작연도 | 2019 |
| 주관부처 | 과학기술정보통신부 Ministry of Science and ICT |
| 등록번호 | TRKO202000003404 |
| 과제고유번호 | 1711101882 |
| 사업명 | 한국전자통신연구원연구운영비지원(R&D)(주요사업비) |
| DB 구축일자 | 2020-05-16 |
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