초록 ▼

• 기술적 성과:
(1) 비아접촉 기술을 통한 접촉저항 저감 및 고성능소자 구현
(2) 1D 접촉을 통한 높은 이동도 및 on/off 비를 보이는 소자 구현
(3) 금속과 2D 소재 계면 삽입층을 접촉특성 향상된 소자 구현
(4) 2D 소재 치환형 도핑기술 개발
(5) 흑린내 이온충격을 통해 고밀도 전자도핑 유도

• 1단계 논문성과: (1) 1단계에서 평균 임팩지수 14.02의 논문 14편 사사 (2) 사사된 논문 중 7편은 국제공동연구 결과
• 1단계 인력교류: (1) 박사후연구

• 기술적 성과:
(1) 비아접촉 기술을 통한 접촉저항 저감 및 고성능소자 구현
(2) 1D 접촉을 통한 높은 이동도 및 on/off 비를 보이는 소자 구현
(3) 금속과 2D 소재 계면 삽입층을 접촉특성 향상된 소자 구현
(4) 2D 소재 치환형 도핑기술 개발
(5) 흑린내 이온충격을 통해 고밀도 전자도핑 유도

• 1단계 논문성과: (1) 1단계에서 평균 임팩지수 14.02의 논문 14편 사사 (2) 사사된 논문 중 7편은 국제공동연구 결과
• 1단계 인력교류: (1) 박사후연구원 및 학생 장기파견(4회) (2) 공동워크숍 3회 개최

(출처 : 보고서 요약서 3p)

Abstract ▼

□ Purpose
• During Stage 1 of GRL project, we performed collaboration research mainly on carrier doping of 2D materials and reduction of contact resistance of 2D devices.
• We developed foundational technology to realize novel electronic devices based on 2D nano-materials. Such devices require

□ Purpose
• During Stage 1 of GRL project, we performed collaboration research mainly on carrier doping of 2D materials and reduction of contact resistance of 2D devices.
• We developed foundational technology to realize novel electronic devices based on 2D nano-materials. Such devices require new processing technologies for doping, reduction of contact resistance, and formation of high performance heterogeneous junctions. This collaborative and systematic research was conducted in the areas of computation, analysis, synthesis, and device integration.
• We demonstrated high performance 2D crystal dedicated interfaces by forming multi-dimensional atomic scale controlled metallic contact, by introducing doping control methods to the interfaces.

□ contents
• Study of correlation between contact resistance and electron transport at the van der Waals interface by analyzing Schottky barrier
• Investigation of mechanisms responsible for Fermi level pinning at the van der Waals interface to metal
• Develpment of Fermi level depinning technique via surface charge transfer doping
• Formation of 1D electrical contact to 2D materials via plasma etching to give rise to high electrical performance and Fermi level depinning
• Investigation of via-contact and hBN encapsulation techniques to reduce low contact resistance
• Development of large scale and uniform films by employing CVD with H2S presursors to TMD
• Demonstration of low contact resistance devices by inserting interlayer such as monolayer hBN and BV polymer at the interface between 2D materials and metals
• Analysis of charge transport mechanism in black phosphorus under high field via dielectric engineering and heterostructure engineering, and realization of impact ionization in 2D black phosphorus

□ Developement results
• Technical achievements: (1) Reduction of contact resistance and demonstration of high performance devices from via-contact (2) Demonstration of high mobility and high on/off ratio from 1D contact (3) Demonstration of improved contact properties by introducing insertion layer at the 2D interface (4) Development of substitutional doping technology into 2D materials (5) Demonstration of high density doping via impact ionization in 2D black phosphorus
• Publication: (1) 14 acknowledged papers with an average impact factor of 14.02 (2) 7 acknowledged papers as outcomes of international collaboration
• Manpower exchange: (1) Long term dispatches to FRL (4 times for post-doc and students) (2) Joint workshops (held at New York and Gyeonggi-do in 2018, and at New York in Feb 2019)

□ Expected Contribution
• Suggestion of new paradigm to meet requirements of low power consumption for mobile and IoT environment from 2D materials and design
• Realization of new devices, high performance, and multi-functionality which are not possible from 3D materials
• Identification of new functionalities from high performance electronic, photonic, energy devices through the integration of 2D materials

(출처 : SUMMARY 5p)

목차 Contents

• 표지 ... 1
• 제 출 문 ... 2
• 보고서 요약서 ... 3
• 요 약 문 ... 4
• SUMMARY ... 5
• 목차 ... 6
• 1. 연구개발 목표 및 내용 ... 7
• 가. 최종 목표 ... 7
• 나. 단계목표 ... 7
• 다. 당초 목표의 수정·보완(중요 연구변경) 사유 ... 7
• 라. 1단계 연차별 연구목표 및 내용 ... 8
• 2. 연구 추진전략 및 방법 ... 8
• 3. 주요 연구개발 결과 ... 9
• 가. 목표달성도 ... 9
• 나. 대표적 연구업적 ... 17
• 4. 연구결과의 활용계획 ... 22
• 5. 연구개발성과 현황 ... 22
• 6. 국가과학기술종합정보시스템에 등록한 연구시설․장비 현황 ... 22
• 7. Final report for 1st Phase of GRL ... 23
• 끝페이지 ... 34