전자빔증착기를 이용하여 적외선영역에서 직접천이형 에너지갭을 갖는 Ⅲ-Ⅳ족 2원 화합물반도체인 InSb박막을 제작하여 전기-자기적 및 광학적 특성을 조사하였다. 증착된 박막을 X-선회절법으로 분석한 결과, 열처리 온도525℃, 열처리시간 30분 열처리한 박막에서 In2O3피크가 없어지고, InSb피크만 나타났으며, 이때의 격자상수 ao=6.49Å이었다. 기판온도가 증가할수록 InSb박막의 결정화가 일어나 ...
국문요약
전자빔증착기를 이용하여 적외선영역에서 직접천이형 에너지갭을 갖는 Ⅲ-Ⅳ족 2원 화합물반도체인 InSb박막을 제작하여 전기-자기적 및 광학적 특성을 조사하였다. 증착된 박막을 X-선회절법으로 분석한 결과, 열처리 온도525℃, 열처리시간 30분 열처리한 박막에서 In2O3피크가 없어지고, InSb피크만 나타났으며, 이때의 격자상수 ao=6.49Å이었다. 기판온도가 증가할수록 InSb박막의 결정화가 일어나 전자이동도는 증가하고 비저항은 감소하였다. 온도 100K-300K, 자계500-9000gauss범위에서 van der Pauw법에 의한 홀효과를 측정하여 전기-자기적 성질을 조사하였다. 증착된 박막의 전도형은 n형이었고, 300K에서 캐리어농도는 2.5×10-16cm-3이었으며 캐리어이동도는 2.83×104cm2/V·sec이었다. 한편 250K에서 측정한 캐리어이동도는 3.69×104cm2/V·sec였다. 자계를 인가하지 않았을 때에 비하여 9000gauss에서 자기저항은 약 180%증가하였고, 자계가 증가할수록 자기저항은 증가하였다. 홀전압은 두께가 얇을수록 증가하였으며, 9000gauss에서 19.8mV를 나타내었다. 적외선 분광기로 측정한 InSb박막의 광학적 에너지갭은 기판온도가 증가할수록 InSb의 에너지 갭에 해당하는 값으로 이동하였으며, 기판온도 350℃, 열처리온도 525℃일때 측정한 값은 0.173eV였다.
국문요약
전자빔증착기를 이용하여 적외선영역에서 직접천이형 에너지갭을 갖는 Ⅲ-Ⅳ족 2원 화합물반도체인 InSb박막을 제작하여 전기-자기적 및 광학적 특성을 조사하였다. 증착된 박막을 X-선회절법으로 분석한 결과, 열처리 온도525℃, 열처리시간 30분 열처리한 박막에서 In2O3피크가 없어지고, InSb피크만 나타났으며, 이때의 격자상수 ao=6.49Å이었다. 기판온도가 증가할수록 InSb박막의 결정화가 일어나 전자이동도는 증가하고 비저항은 감소하였다. 온도 100K-300K, 자계500-9000gauss범위에서 van der Pauw법에 의한 홀효과를 측정하여 전기-자기적 성질을 조사하였다. 증착된 박막의 전도형은 n형이었고, 300K에서 캐리어농도는 2.5×10-16cm-3이었으며 캐리어이동도는 2.83×104cm2/V·sec이었다. 한편 250K에서 측정한 캐리어이동도는 3.69×104cm2/V·sec였다. 자계를 인가하지 않았을 때에 비하여 9000gauss에서 자기저항은 약 180%증가하였고, 자계가 증가할수록 자기저항은 증가하였다. 홀전압은 두께가 얇을수록 증가하였으며, 9000gauss에서 19.8mV를 나타내었다. 적외선 분광기로 측정한 InSb박막의 광학적 에너지갭은 기판온도가 증가할수록 InSb의 에너지 갭에 해당하는 값으로 이동하였으며, 기판온도 350℃, 열처리온도 525℃일때 측정한 값은 0.173eV였다.
In infrared region a binary compound semiconductor InSb thin film with a direct-transition energy gap was fabricated by electron-beam evaporator. Then, the electric-magnetic and optical properties of InSb thin films were investigated.
The evaporated thin films were analyzed by X-ray diffrac...
In infrared region a binary compound semiconductor InSb thin film with a direct-transition energy gap was fabricated by electron-beam evaporator. Then, the electric-magnetic and optical properties of InSb thin films were investigated.
The evaporated thin films were analyzed by X-ray diffraction method. As a result, In2O3 peak was disappeared and only InSb peak was appeared at InSb thin film annealed 525℃ for 30min. The lattice constant was 6.49Å.
When the substrate temperature was increased, the electron mobility was increased and the resistivity was decreased due to the crystallization of the InSb thin film.
In the temperature range of 100-300K and the magnetic field of 500-9000gauss, Hall effect was measured by the van der Pauw method and then electric-magnetic properties were examined. The conduction type of the evaporated InSb thin film was n-type with the carrier concentration of 2.5×1016cm-3. The carrier mobility was 2.83×104cm2/V-sec, 3.69×104cm2/V-sec at 300K and 250K, respectively.
As compared with non-applied magnetic field, the magnetoresistance was increased with increasing the magnetic field. The magnetoresistance was increased 180% at 9000gauss.
The Hall voltage was increased with decreasing the film thickness. The Hall voltage was 19.8mv at 9000gauss.
The optical energy gap of InSb thin film which was measured by IR Spectrophotometer was moved to the energy gap of InSb as the substrate temperature was increased. At substrate temperature 350℃ and annealing temperature 525℃, the energy gap of InSb thin film was 0.173eV.
In infrared region a binary compound semiconductor InSb thin film with a direct-transition energy gap was fabricated by electron-beam evaporator. Then, the electric-magnetic and optical properties of InSb thin films were investigated.
The evaporated thin films were analyzed by X-ray diffraction method. As a result, In2O3 peak was disappeared and only InSb peak was appeared at InSb thin film annealed 525℃ for 30min. The lattice constant was 6.49Å.
When the substrate temperature was increased, the electron mobility was increased and the resistivity was decreased due to the crystallization of the InSb thin film.
In the temperature range of 100-300K and the magnetic field of 500-9000gauss, Hall effect was measured by the van der Pauw method and then electric-magnetic properties were examined. The conduction type of the evaporated InSb thin film was n-type with the carrier concentration of 2.5×1016cm-3. The carrier mobility was 2.83×104cm2/V-sec, 3.69×104cm2/V-sec at 300K and 250K, respectively.
As compared with non-applied magnetic field, the magnetoresistance was increased with increasing the magnetic field. The magnetoresistance was increased 180% at 9000gauss.
The Hall voltage was increased with decreasing the film thickness. The Hall voltage was 19.8mv at 9000gauss.
The optical energy gap of InSb thin film which was measured by IR Spectrophotometer was moved to the energy gap of InSb as the substrate temperature was increased. At substrate temperature 350℃ and annealing temperature 525℃, the energy gap of InSb thin film was 0.173eV.
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