동일한 결정구조를 갖는 금속의 경우, homologeous temperature(T/Tm)가 동일하면, 박막의 미세구조는 증착 입자의 에너지에 따라 유사한 미세구조의 변화를 보여준다. 증착 입자의 에너지는 제조 공정 변수인 공정압력, 공정전압, 타겟과 스퍼터링 가스의 ...
동일한 결정구조를 갖는 금속의 경우, homologeous temperature(T/Tm)가 동일하면, 박막의 미세구조는 증착 입자의 에너지에 따라 유사한 미세구조의 변화를 보여준다. 증착 입자의 에너지는 제조 공정 변수인 공정압력, 공정전압, 타겟과 스퍼터링 가스의 질량비, 음극의 모양, 기판의 결정방향 등에 의해 결정된다. 본 실험에서는 면심입방 결정구조를 갖는 Al, Cu, Pt박막을 제조하는 동안 공정압력과 공정전압을 변화시켜, 그에 따른 각 재료 박막의 미세구조 변화를 관찰하였다. 또한, Laser scanning device를 사용하여 각 박막들의 미세구조의 변화에 따른 응력의 변화를 고찰하였다.
동일한 결정구조를 갖는 금속의 경우, homologeous temperature(T/Tm)가 동일하면, 박막의 미세구조는 증착 입자의 에너지에 따라 유사한 미세구조의 변화를 보여준다. 증착 입자의 에너지는 제조 공정 변수인 공정압력, 공정전압, 타겟과 스퍼터링 가스의 질량비, 음극의 모양, 기판의 결정방향 등에 의해 결정된다. 본 실험에서는 면심입방 결정구조를 갖는 Al, Cu, Pt박막을 제조하는 동안 공정압력과 공정전압을 변화시켜, 그에 따른 각 재료 박막의 미세구조 변화를 관찰하였다. 또한, Laser scanning device를 사용하여 각 박막들의 미세구조의 변화에 따른 응력의 변화를 고찰하였다.
Thin films are used for various engineering applications such as integrated circuits, information storage devices, and the coatings for wear protection and corrosion resistance. Although these materials are chosen primarily due to their functional electronic, magnetic, optical properties, they shoul...
Thin films are used for various engineering applications such as integrated circuits, information storage devices, and the coatings for wear protection and corrosion resistance. Although these materials are chosen primarily due to their functional electronic, magnetic, optical properties, they should survive under harsh mechanical and thermal environments for reasonably long period of time. A multi-layer structure results in stress from the difference in thermal expansion coefficient and elastic modulus between layers due to the artificial bonding of dissimilar materials, but there are factors causing mechanical stresses, leading to a wide variety of deformation and fracture phenomena. Residual stress that develop in such films and coatings may lead to film creaking, peeling delamination and blistering depending on the nature of stresses. Also these stresses are known to affect electronic, magnetic, optical properties. It is imperative to understand residual stress origins in terms of the microstructure changes according to processing variables for the reliability of thin film devices. The intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. The fundamental factors affecting on the nature of stress and resulting microstructure are the particle flux and energy striking the condensing film, which are a function of many processing parameters such as working pressure, target/sputtering gas mass ratio, bias voltage, cathode shape, substrate orientation. In this study, Al, Cu, Pt films have been prepared by RF magnetron sputtering at different working pressure and RF power. The influence of processing variables on the microstructures and residual stress states in the films has been studied. The relationship between microstructures and residual stress changes in the films was also investigated for as-coated specimens as well as heat-treated specimens.
Thin films are used for various engineering applications such as integrated circuits, information storage devices, and the coatings for wear protection and corrosion resistance. Although these materials are chosen primarily due to their functional electronic, magnetic, optical properties, they should survive under harsh mechanical and thermal environments for reasonably long period of time. A multi-layer structure results in stress from the difference in thermal expansion coefficient and elastic modulus between layers due to the artificial bonding of dissimilar materials, but there are factors causing mechanical stresses, leading to a wide variety of deformation and fracture phenomena. Residual stress that develop in such films and coatings may lead to film creaking, peeling delamination and blistering depending on the nature of stresses. Also these stresses are known to affect electronic, magnetic, optical properties. It is imperative to understand residual stress origins in terms of the microstructure changes according to processing variables for the reliability of thin film devices. The intrinsic stress can be tensile or compressive depending on the energetics of the deposition process. The fundamental factors affecting on the nature of stress and resulting microstructure are the particle flux and energy striking the condensing film, which are a function of many processing parameters such as working pressure, target/sputtering gas mass ratio, bias voltage, cathode shape, substrate orientation. In this study, Al, Cu, Pt films have been prepared by RF magnetron sputtering at different working pressure and RF power. The influence of processing variables on the microstructures and residual stress states in the films has been studied. The relationship between microstructures and residual stress changes in the films was also investigated for as-coated specimens as well as heat-treated specimens.
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