Photoresist(PR) ashing was process using atmospheric pressure plasma. The factors that affect PR ashing include pressure from the surroundings, the distance between the plasma generating electrode and the substrate, the type and intermixture of the gas, the magnitude of the applied power, the temper...
Photoresist(PR) ashing was process using atmospheric pressure plasma. The factors that affect PR ashing include pressure from the surroundings, the distance between the plasma generating electrode and the substrate, the type and intermixture of the gas, the magnitude of the applied power, the temperature on the surface of the substrate, the velocity at which the substrate is transported, etc. The distance between the plasma generator and the substrate was fixed at 3mm, the plasma processing time given an enough time of 30 seconds, and the type and mixture of the gas, the magnitude of the power applied, and the velocity at which the substrate was transported were set as the variables. The gas mixture used was a mixture of He/O_(2) and He/O_(2)/CF_(4), the power applied was varied from 700W to 1400W using radios frequency(RF, 13.56MHz), and the transporting speed of the substrate was varied from 0mm/sec(rest position) to 300mm/sec. The thickness of the PR before and after ashing was obtained using a mechanical profilometer and the ashing rate was derived. The surface of the substrate after PR ashing was observed with filed emission scanning electron microscopy(FESEM). Also, the internal radical of the plasma was analyzed using optical emission spectroscopy (OES). The change in the surface temperature of the substrate depending on the plasma process time was measured using thermal couple. The PR ashing rate increased as the power applied increased and when the oxygen content was raised. Although the PR ashing rate increased by 30% when CF_(4) gas was added, solidified residue formed after ashing could not be removed using water rinsing. As the velocity at which the substrate was transported increased, the ashing rate diminished, and an increase in surface temperature was harder to achieve during transportation than at rest position. This was concluded to be due to a decrease in rate at which the internal radical in plasma reaches PR film surface. Therefore, the following conditions were applied at rest position to achieve a maximum PR ashing rate of 26000A/min; He:O_(2)=10slm:500sccm, 1400W, and He:O_(2)=10slm:600sccm, 1200W. However, SEM images after PR ashing showed remains of residue. Further research will be necessary to remove these residues. Atmospheric pressure glow plasma was used to process PR ashing, and the possibility of PR ashing was visible at atmospheric pressure and not low pressure. The equipment used for PR ashing using atmospheric glow plasma was relatively affordable compared to wet method or vacuum equipment, and the simplicity of maximizing area that allows the maximization of substrate size is expected to be an appropriate alternate solution.
Photoresist(PR) ashing was process using atmospheric pressure plasma. The factors that affect PR ashing include pressure from the surroundings, the distance between the plasma generating electrode and the substrate, the type and intermixture of the gas, the magnitude of the applied power, the temperature on the surface of the substrate, the velocity at which the substrate is transported, etc. The distance between the plasma generator and the substrate was fixed at 3mm, the plasma processing time given an enough time of 30 seconds, and the type and mixture of the gas, the magnitude of the power applied, and the velocity at which the substrate was transported were set as the variables. The gas mixture used was a mixture of He/O_(2) and He/O_(2)/CF_(4), the power applied was varied from 700W to 1400W using radios frequency(RF, 13.56MHz), and the transporting speed of the substrate was varied from 0mm/sec(rest position) to 300mm/sec. The thickness of the PR before and after ashing was obtained using a mechanical profilometer and the ashing rate was derived. The surface of the substrate after PR ashing was observed with filed emission scanning electron microscopy(FESEM). Also, the internal radical of the plasma was analyzed using optical emission spectroscopy (OES). The change in the surface temperature of the substrate depending on the plasma process time was measured using thermal couple. The PR ashing rate increased as the power applied increased and when the oxygen content was raised. Although the PR ashing rate increased by 30% when CF_(4) gas was added, solidified residue formed after ashing could not be removed using water rinsing. As the velocity at which the substrate was transported increased, the ashing rate diminished, and an increase in surface temperature was harder to achieve during transportation than at rest position. This was concluded to be due to a decrease in rate at which the internal radical in plasma reaches PR film surface. Therefore, the following conditions were applied at rest position to achieve a maximum PR ashing rate of 26000A/min; He:O_(2)=10slm:500sccm, 1400W, and He:O_(2)=10slm:600sccm, 1200W. However, SEM images after PR ashing showed remains of residue. Further research will be necessary to remove these residues. Atmospheric pressure glow plasma was used to process PR ashing, and the possibility of PR ashing was visible at atmospheric pressure and not low pressure. The equipment used for PR ashing using atmospheric glow plasma was relatively affordable compared to wet method or vacuum equipment, and the simplicity of maximizing area that allows the maximization of substrate size is expected to be an appropriate alternate solution.
주제어
#대기압 플라즈마 Photoresist ashing
※ AI-Helper는 부적절한 답변을 할 수 있습니다.