투명일렉트로닉스는 차세대 디스플레이와 전자소자구현을 위한 첨단기술이다. 특히 투명 박막 형 트랜지스터는 투명전자기술 구현의 핵심이 되는 소자로서 세계적으로 활발한 연구가 진행되고 있다. 본 논문은 투명전자소재의 물성 및 이를 통해 구현된 투명전자소자의 동작특성 분석에 초점을 두었다. 산화아연, 산화하프늄, 인듐주석 산화물 (ITO), 갈륨도핑 된 산화아연 (GZO)등의 물질이 체계적인 실험과 분석을 통해 투명전자소자 구현에 유리한 투명 반도체, 투명유전체, 투명전도체로서 최적화되었다. 본 연구의 목적은 최적화된 각각의 물질을 이용하여 고투명도의 투명전자소자를 구현하는 것이다. 산화하프늄, 갈륨도핑 된 산화아연 (GZO)을 사용하여 투명 금속-유전체-금속 ...
투명일렉트로닉스는 차세대 디스플레이와 전자소자구현을 위한 첨단기술이다. 특히 투명 박막 형 트랜지스터는 투명전자기술 구현의 핵심이 되는 소자로서 세계적으로 활발한 연구가 진행되고 있다. 본 논문은 투명전자소재의 물성 및 이를 통해 구현된 투명전자소자의 동작특성 분석에 초점을 두었다. 산화아연, 산화하프늄, 인듐주석 산화물 (ITO), 갈륨도핑 된 산화아연 (GZO)등의 물질이 체계적인 실험과 분석을 통해 투명전자소자 구현에 유리한 투명 반도체, 투명유전체, 투명전도체로서 최적화되었다. 본 연구의 목적은 최적화된 각각의 물질을 이용하여 고투명도의 투명전자소자를 구현하는 것이다. 산화하프늄, 갈륨도핑 된 산화아연 (GZO)을 사용하여 투명 금속-유전체-금속 캐패시터가 구현하였다. 완성된 소자의 가시광선 영역의 평균 투명도는 80 % 이상이었고, 유전상수는 24, 5 V 전압인가시의 누설전류는 1.73ⅹ10-4 A/cm2 이었다. 투명 박막형 트랜지스터는 산화아연, 산화하프늄, 갈륨도핑 된 산화아연 (GZO)을 사용하여 구현되었다. 제작된 투명 트랜지스터는 n-채널, 증가형모드로 동작하며 가시광선영역에서 평균 투과율 85 % 이상을 나타내었다. 전계효과 이동도와 게이트전압 인가/비인가 시의 전류 비는 11.7 cm2/Vs, 105으로 각각 측정되었다. 이러한 산화아연계 투명 전자소자의 전기, 광학적 특성 분석은 평판 디스플레이의 효율향상은 물론 전체적인 투명일렉트로닉스 시대를 앞당기는 초석이 될 것이다.
투명일렉트로닉스는 차세대 디스플레이와 전자소자구현을 위한 첨단기술이다. 특히 투명 박막 형 트랜지스터는 투명전자기술 구현의 핵심이 되는 소자로서 세계적으로 활발한 연구가 진행되고 있다. 본 논문은 투명전자소재의 물성 및 이를 통해 구현된 투명전자소자의 동작특성 분석에 초점을 두었다. 산화아연, 산화하프늄, 인듐주석 산화물 (ITO), 갈륨도핑 된 산화아연 (GZO)등의 물질이 체계적인 실험과 분석을 통해 투명전자소자 구현에 유리한 투명 반도체, 투명유전체, 투명전도체로서 최적화되었다. 본 연구의 목적은 최적화된 각각의 물질을 이용하여 고투명도의 투명전자소자를 구현하는 것이다. 산화하프늄, 갈륨도핑 된 산화아연 (GZO)을 사용하여 투명 금속-유전체-금속 캐패시터가 구현하였다. 완성된 소자의 가시광선 영역의 평균 투명도는 80 % 이상이었고, 유전상수는 24, 5 V 전압인가시의 누설전류는 1.73ⅹ10-4 A/cm2 이었다. 투명 박막형 트랜지스터는 산화아연, 산화하프늄, 갈륨도핑 된 산화아연 (GZO)을 사용하여 구현되었다. 제작된 투명 트랜지스터는 n-채널, 증가형모드로 동작하며 가시광선영역에서 평균 투과율 85 % 이상을 나타내었다. 전계효과 이동도와 게이트전압 인가/비인가 시의 전류 비는 11.7 cm2/Vs, 105으로 각각 측정되었다. 이러한 산화아연계 투명 전자소자의 전기, 광학적 특성 분석은 평판 디스플레이의 효율향상은 물론 전체적인 투명일렉트로닉스 시대를 앞당기는 초석이 될 것이다.
Transparent electronics are quickly becoming an attractive technology for next generation displays and electronic devices. Especially, transparent thin film transistors based on wide band-gap semiconductors are currently one of the most intensive research subjects. This thesis has focused on analysi...
Transparent electronics are quickly becoming an attractive technology for next generation displays and electronic devices. Especially, transparent thin film transistors based on wide band-gap semiconductors are currently one of the most intensive research subjects. This thesis has focused on analysis of electrical and optical characterizations of transparent electronic materials and devices. Well optimized ZnO, HfO2, indium tin oxide, and Ga doped ZnO films for realizing transparent electronic devices were fabricated and analyzed. ZnO thin film exhibits electrical resistivity of 104 Ωcm, carrier concentration of 1012 cm-3, highly c-axis orientation and smooth surface morphology. The influence of the film thickness and rapid thermal annealing temperature on the structural, electrical, and optical properties of the HfO2 films was investigated and analyzed. The result shows that the optical transmittance of HfO2 thin films have a strong dependence on both the film thickness and rapid thermal annealing temperature. We have suggested a new 2 step process to enhance the properties of indium tin oxide thin films. High quality indium tin oxide films with a resistivity of 3.02×10-4 Ωcm, a carrier mobility of 32.07 cm2/Vs, and a transparency above 90 % in visible region was able to be obtained by low temperature process. These results indicate the promise of the present approach for making good quality indium tin oxide films at low temperature with a potential application in transparent electrode. For Ga doped ZnO films, the samples showed the better crystallinity with the increase of rapid thermal annealing temperature. After rapid thermal annealing, low resistivity of 2.92×10-4 Ω㎝ was obtained from the film annealed at 400℃. It was due to the higher product of carrier concentration and mobility. The optical transmission in visible region of Ga doped ZnO films increased with the increase of rapid thermal annealing temperature. High transmittance (above 90 %) in the visible region was exhibited by the films annealed at 300℃ and above. The minimum resistivity of 1.30×10-4 Ωcm was obtained from the sample grown by sputtering at the substrate temperature of 500oC and the rf power of 150 W. High transmittance (above 90 %) in the visible region was exhibited. These results indicate the promise of the present approach for making high quality Ga doped ZnO films with potential applications in transparent electrodes. Another objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. It was found that the transparent metal-insulator-metal capacitor annealed at 300 °C has an overall high performance such as the high dielectric constant of 24, the low leakage current of 1.73×10-4 A/cm2 at 5 V, and the high transmittance above 80 % in the visible region. These results indicate that the transparent HfO2 metal-insulator-metal capacitors are suitable for use in transparent electronics. This goal has been achieved in the fabrication of ZnO-based thin film transistors with an average transparency above 85 % in visible region. The field effect mobility and on-to-off current ratio were 11.7 cm2/Vs and 105, respectively. These transistors exhibit a prototypical n-channel, enhancement mode thin film transistor operation, confirming that conventional electronic device behavior can, indeed, be realized using transparent material systems. Optical, structural, and electrical characterization studies of these ZnO-based transparent thin film transistors serve to elucidate the mechanisms responsible for the behavior of these devices in particular, and of transparent electronic devices in general.
Transparent electronics are quickly becoming an attractive technology for next generation displays and electronic devices. Especially, transparent thin film transistors based on wide band-gap semiconductors are currently one of the most intensive research subjects. This thesis has focused on analysis of electrical and optical characterizations of transparent electronic materials and devices. Well optimized ZnO, HfO2, indium tin oxide, and Ga doped ZnO films for realizing transparent electronic devices were fabricated and analyzed. ZnO thin film exhibits electrical resistivity of 104 Ωcm, carrier concentration of 1012 cm-3, highly c-axis orientation and smooth surface morphology. The influence of the film thickness and rapid thermal annealing temperature on the structural, electrical, and optical properties of the HfO2 films was investigated and analyzed. The result shows that the optical transmittance of HfO2 thin films have a strong dependence on both the film thickness and rapid thermal annealing temperature. We have suggested a new 2 step process to enhance the properties of indium tin oxide thin films. High quality indium tin oxide films with a resistivity of 3.02×10-4 Ωcm, a carrier mobility of 32.07 cm2/Vs, and a transparency above 90 % in visible region was able to be obtained by low temperature process. These results indicate the promise of the present approach for making good quality indium tin oxide films at low temperature with a potential application in transparent electrode. For Ga doped ZnO films, the samples showed the better crystallinity with the increase of rapid thermal annealing temperature. After rapid thermal annealing, low resistivity of 2.92×10-4 Ω㎝ was obtained from the film annealed at 400℃. It was due to the higher product of carrier concentration and mobility. The optical transmission in visible region of Ga doped ZnO films increased with the increase of rapid thermal annealing temperature. High transmittance (above 90 %) in the visible region was exhibited by the films annealed at 300℃ and above. The minimum resistivity of 1.30×10-4 Ωcm was obtained from the sample grown by sputtering at the substrate temperature of 500oC and the rf power of 150 W. High transmittance (above 90 %) in the visible region was exhibited. These results indicate the promise of the present approach for making high quality Ga doped ZnO films with potential applications in transparent electrodes. Another objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. It was found that the transparent metal-insulator-metal capacitor annealed at 300 °C has an overall high performance such as the high dielectric constant of 24, the low leakage current of 1.73×10-4 A/cm2 at 5 V, and the high transmittance above 80 % in the visible region. These results indicate that the transparent HfO2 metal-insulator-metal capacitors are suitable for use in transparent electronics. This goal has been achieved in the fabrication of ZnO-based thin film transistors with an average transparency above 85 % in visible region. The field effect mobility and on-to-off current ratio were 11.7 cm2/Vs and 105, respectively. These transistors exhibit a prototypical n-channel, enhancement mode thin film transistor operation, confirming that conventional electronic device behavior can, indeed, be realized using transparent material systems. Optical, structural, and electrical characterization studies of these ZnO-based transparent thin film transistors serve to elucidate the mechanisms responsible for the behavior of these devices in particular, and of transparent electronic devices in general.
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