In recent years, the miniaturization of electronic devices such as a cellular phone and a notebook computer is progressing rapidly. Therefore highdensity wiring, is required in printed wiring board(PWB) on which computer is mounted. Multilayer PWB has received considerable attention for its potentia...
In recent years, the miniaturization of electronic devices such as a cellular phone and a notebook computer is progressing rapidly. Therefore highdensity wiring, is required in printed wiring board(PWB) on which computer is mounted. Multilayer PWB has received considerable attention for its potential application to the PWB with highdensity wiring. As portable communication equipment and other electronic equipment become smaller and more functionally integrated, the density of packages and the printed wiring boards on which they are mounted have become higher. Electronic devices are evolving, becoming faster, smaller, more multifunctional and cheaper. As a result, many boards require to have highdensity construction. But keeping yields up is not easy, especially when making highdensity boards involving flip chip ball grid array (FCBGA). Subtractive Process and SemiAdditive Process (SAP / MSAP) improve high density. However, the subtractive process has some basic problems (like its chemical side etch), while SAP/MSAP has limitations due to its flash etching process. In the present study, the process of modify SemiAdditive Process was used to make fine pattern and found applicable parameters of each process (exposure, development, plating and flash etching). Exposure process requires a highresolution dry film photoresist, clean development (B.P 30%), low exposure energy, and clean stripping to avoid trace resist residues. Plating process needs to have low flow rate, low additive concentration, applicable temperature (approximately 30℃) to achieve the hole corner thickness, a flat pattern, and via fill(depth 30um, open size 80um). In flash etching process, heat treatment was done before flash etching (the base copper etching) because copper microstructure is different from the plated copper to the base copper. The optimum heat treatment temperature of Cu was about 130±20℃.
In recent years, the miniaturization of electronic devices such as a cellular phone and a notebook computer is progressing rapidly. Therefore highdensity wiring, is required in printed wiring board(PWB) on which computer is mounted. Multilayer PWB has received considerable attention for its potential application to the PWB with highdensity wiring. As portable communication equipment and other electronic equipment become smaller and more functionally integrated, the density of packages and the printed wiring boards on which they are mounted have become higher. Electronic devices are evolving, becoming faster, smaller, more multifunctional and cheaper. As a result, many boards require to have highdensity construction. But keeping yields up is not easy, especially when making highdensity boards involving flip chip ball grid array (FCBGA). Subtractive Process and SemiAdditive Process (SAP / MSAP) improve high density. However, the subtractive process has some basic problems (like its chemical side etch), while SAP/MSAP has limitations due to its flash etching process. In the present study, the process of modify SemiAdditive Process was used to make fine pattern and found applicable parameters of each process (exposure, development, plating and flash etching). Exposure process requires a highresolution dry film photoresist, clean development (B.P 30%), low exposure energy, and clean stripping to avoid trace resist residues. Plating process needs to have low flow rate, low additive concentration, applicable temperature (approximately 30℃) to achieve the hole corner thickness, a flat pattern, and via fill(depth 30um, open size 80um). In flash etching process, heat treatment was done before flash etching (the base copper etching) because copper microstructure is different from the plated copper to the base copper. The optimum heat treatment temperature of Cu was about 130±20℃.
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