Abstract ▼ AI-Helper

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and Al-SAMs layers were fabricated and the electrical characteristics were evaluated. The Al2O3 and Al-SAMs layers were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer, floa...

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and Al-SAMs layers were fabricated and the electrical characteristics were evaluated. The Al2O3 and Al-SAMs layers were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer, floating gate and control layer were sequentially deposited at 200℃. The thickness of ZnO:Cu film was about 4nm by Transmission Electron Microscopy. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was larger than 13V. The feasibility of ZnO:Cu fims dispersed in Al2O3 and Al-SAMs layers for NFGM device application was also showed.

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