Organic photovoltaics(OPVs) have low power conversion efficiency(PCE), but they have several advantages like low cost, light weight, large area, simple and flexibility.
In this study, we improved the stability of OPVs with solution-processed graphene oxide(GO) functioned as an anode buffer laye...
Organic photovoltaics(OPVs) have low power conversion efficiency(PCE), but they have several advantages like low cost, light weight, large area, simple and flexibility.
In this study, we improved the stability of OPVs with solution-processed graphene oxide(GO) functioned as an anode buffer layer. The OPVs using indium zinc oxide (IZO), IZO/GO, GO/IZO, and poly(3,4-thylenedioxythiophene) doped poly(styrene sulfonate) (PEDOT:PSS) as a control device, exhibited the conversion efficiency of 3.4%, 3.5%, 3.9% and 3.4%, respectively. No obvious degradation was discovered for the OPVs with incorporating GO as one of the anode buffer layers after 1 h continuous illumination under AM1.5. On the other hand, after only 1 h continuous illumination, a momentous degradation was observed for the OPVs without the presence of GO.
To make the semi-transparent inverted OPVs, we were using a transparent anode based on two different transparent materials PH1000 and PH1000/WOx. The performances of the semi-transparent inverted OPVs with and without WOx uisng P3HT and PCBM are about 2.45% with filling factor of ~55%, short circuit current density of ~6.72 mA/cm2 along with 0.65 V open-circuit voltage. And, the device employing PH1000/WOx has a better stability compared to the OPV with only PH1000.
We could get the high performance of conventional OPVs incorporating a solution-processed zinc oxide (ZnO) spin coated on the photoactive layer P3HT:ICBA. We show a significant improvement in short-circuit current density (Jsc) upon an introduction of ZnO, and this is further evidenced by the reduction of Jsc leading to a lower PCE in the device without the presence of ZnO. Furthermore, we also examined the “photomask” on the performance of ZnO-based device yielding a decrease in both Jsc and open-circuit voltage Voc(of about 13.42% and 0.73%, respectively) but an increase in filling factor. Results demonstrate that ZnO plays an important role in the improvement of OSCs’ performance.
For flexible OPVs, we were using the flexible substrate as clean polyimide(CPI) on top of Si wafer and we could detach the flexible substrate with OPVs after device fabrication.
To make the ITO anodes, we need the sputtering process and cost is very high and substrate could be damaged by high temperature. But organic electrode with solution process could be used instead of ITO electrode. Thus ITO free devices could be achieved.
We also checked the characteristics with different light intensity and temperature. With different light intensity, the Jsc is changed but PCE is similar. And the mobility of carrier is decreased at low temperature.
By using results of this study, We expect that OPV can be used in PC, mobile phone, and in military soon by improving efficiency and lifetime.
Organic photovoltaics(OPVs) have low power conversion efficiency(PCE), but they have several advantages like low cost, light weight, large area, simple and flexibility.
In this study, we improved the stability of OPVs with solution-processed graphene oxide(GO) functioned as an anode buffer layer. The OPVs using indium zinc oxide (IZO), IZO/GO, GO/IZO, and poly(3,4-thylenedioxythiophene) doped poly(styrene sulfonate) (PEDOT:PSS) as a control device, exhibited the conversion efficiency of 3.4%, 3.5%, 3.9% and 3.4%, respectively. No obvious degradation was discovered for the OPVs with incorporating GO as one of the anode buffer layers after 1 h continuous illumination under AM1.5. On the other hand, after only 1 h continuous illumination, a momentous degradation was observed for the OPVs without the presence of GO.
To make the semi-transparent inverted OPVs, we were using a transparent anode based on two different transparent materials PH1000 and PH1000/WOx. The performances of the semi-transparent inverted OPVs with and without WOx uisng P3HT and PCBM are about 2.45% with filling factor of ~55%, short circuit current density of ~6.72 mA/cm2 along with 0.65 V open-circuit voltage. And, the device employing PH1000/WOx has a better stability compared to the OPV with only PH1000.
We could get the high performance of conventional OPVs incorporating a solution-processed zinc oxide (ZnO) spin coated on the photoactive layer P3HT:ICBA. We show a significant improvement in short-circuit current density (Jsc) upon an introduction of ZnO, and this is further evidenced by the reduction of Jsc leading to a lower PCE in the device without the presence of ZnO. Furthermore, we also examined the “photomask” on the performance of ZnO-based device yielding a decrease in both Jsc and open-circuit voltage Voc(of about 13.42% and 0.73%, respectively) but an increase in filling factor. Results demonstrate that ZnO plays an important role in the improvement of OSCs’ performance.
For flexible OPVs, we were using the flexible substrate as clean polyimide(CPI) on top of Si wafer and we could detach the flexible substrate with OPVs after device fabrication.
To make the ITO anodes, we need the sputtering process and cost is very high and substrate could be damaged by high temperature. But organic electrode with solution process could be used instead of ITO electrode. Thus ITO free devices could be achieved.
We also checked the characteristics with different light intensity and temperature. With different light intensity, the Jsc is changed but PCE is similar. And the mobility of carrier is decreased at low temperature.
By using results of this study, We expect that OPV can be used in PC, mobile phone, and in military soon by improving efficiency and lifetime.
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