Abstract ▼ AI-Helper

Silicon carbide(SiC) is a suitable material for high power, high temperature and high frequency application, due to its high critical electric field, wide bandgap, high thermal conductivity, and etc. Nevertheless, it still has several kind of structural defects, such as micropipes, basal plane dislo...

Silicon carbide(SiC) is a suitable material for high power, high temperature and high frequency application, due to its high critical electric field, wide bandgap, high thermal conductivity, and etc. Nevertheless, it still has several kind of structural defects, such as micropipes, basal plane dislocations, stacking faults(SFs), triangular defects(TDs), threading dislocations etc. Especially SFs and TDs are generated during epitaxy and its area become larger along with the epilayer thickness. Recently, the requirement of power devices with more higher voltage and higher power is increasing so that the more thicker epilayer is needed. As a result, the analysis of SFs and TDs is more important. In this paper, the effects of SFs and TDs on 4H-SiC Schottky barrier diode(SBD) were investigated. SF and TD are distinguished by optical microscope and room-temperature photoluminescence. The Ni-SBDs are fabricated on N- type 4H-SiC epitaxial layer. The electrical characteristics of fabricated SiC SBDs which influenced by each SFs and TDs were also investigated.