In this thesis, the performance of ring oscillators composed of gate-all-around (GAA) field-effect transistors (FETs) with varying the number of nanowire (NW) channels (i.e. single, double, triple, and quadruple) and the shape of channels (i.e. wire, and sheet type), for sub-10-nm logic applications...
In this thesis, the performance of ring oscillators composed of gate-all-around (GAA) field-effect transistors (FETs) with varying the number of nanowire (NW) channels (i.e. single, double, triple, and quadruple) and the shape of channels (i.e. wire, and sheet type), for sub-10-nm logic applications is investigated. The simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (fosc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, this work shows that the fosc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). In addition, it is also demonstrated that the ring oscillators with 3 stacked nano-sheet type of channels with width three times wider than the state-of-the-art fin width exhibit improvements of up to 22% in the oscillation frequencies, compared to a ring oscillator with FinFETs which is industry’s the most advanced architecture in volume production. Thus, this study provides an insight for determining the optimal number of NW channels, capacitive load and the shape of channels for device development and circuit design of GAA FETs.
In this thesis, the performance of ring oscillators composed of gate-all-around (GAA) field-effect transistors (FETs) with varying the number of nanowire (NW) channels (i.e. single, double, triple, and quadruple) and the shape of channels (i.e. wire, and sheet type), for sub-10-nm logic applications is investigated. The simulations reveal that ring oscillators with double, triple, and quadruple NW channels exhibit improvements of up to 50%, 85%, and 97%, respectively, in the oscillation frequencies (fosc), compared to a ring oscillator with a single NW channel, due to the large drive current, in spite of the increased intrinsic capacitance of a given device. Moreover, this work shows that the fosc improvement ratio of the ring oscillators becomes saturated with triple NW channels with additional load capacitances of 0.1 fF and 0.01 fF, which are similar to, or less than the intrinsic device capacitance (~0.1 fF). In addition, it is also demonstrated that the ring oscillators with 3 stacked nano-sheet type of channels with width three times wider than the state-of-the-art fin width exhibit improvements of up to 22% in the oscillation frequencies, compared to a ring oscillator with FinFETs which is industry’s the most advanced architecture in volume production. Thus, this study provides an insight for determining the optimal number of NW channels, capacitive load and the shape of channels for device development and circuit design of GAA FETs.
Keyword
#Gate-all-around Field-effect-transistor Nanowire Nanosheet Ring oscillator Transient simulation
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