Metal oxide thin film is today one of the most advanced fields for a wide range of semiconductor device applications. Amorphous metal oxide semiconductors have been widely studied as the active layers in display backplanes of thin-film transistors (TFTs) because of their attractive advantages, inclu...
Metal oxide thin film is today one of the most advanced fields for a wide range of semiconductor device applications. Amorphous metal oxide semiconductors have been widely studied as the active layers in display backplanes of thin-film transistors (TFTs) because of their attractive advantages, including reasonable electrical mobility in comparison to the silicon-based TFTs, decent optical transparency in the visible light region, excellent uniformity for large-area electronics, and compatibility conductor with low fabrication costs under low-temperature processes. The development of next-generation techniques is inseparable from the solution-process, which is completely meet to the requirement of low-cost fabrication of large-areas by low-temperature processes.
However, still exists a great many challenging issues, such as an unavoidability of high-temperature annealing step for oxidation in the solution process, an instability issue regarding the voltage-bias stress, an optimization problem of stability, and an urgent question of porosity problem of films using solution process, which impact on electrical performance. All of these preparation techniques of oxide thin films will need to restore the crystal structure, eliminate the defects, and ensure satisfactory TFTs electrical characteristics at a high-temperature (above 300 °C) whether solution process or vacuum deposition, which can become a hindrance to hinder the development of flexible thin films and next-generation display devices.
Meanwhile, memristor is defined to be the two-terminal resistive switching non-volatile memories (NVM), and a memristor model was successfully developed by Hewlett-Packard scientists in 2008 upon the original theoretical framework of the memristor, which was published by Leon Chua in 1970. The memristor has been selected as promising candidates to fulfill the high standards required for the next-generation NVM owing to its simple structure, low fabrication cost, low power consumption, fast operation, and high integration. Among the numerous contenders in next-generation NVM, resistive random-access memories (ReRAMs) have been drawn more attention for application in memory, logic and neuromorphic, moreover, it has played a crucial part in recent data processing and storage technology. The ReRAM exhibits excellent fast read and write performance, non-volatility, and low power consumption as the next-generation NVM compared with traditional random-access memory. These benefit from its simple capacitor-like structure, high-density integration, long state-retention time, high switching speed, and low energy consumption.
A two-terminal memristor device using a crossbar array architecture is formed at every cross-point has exhibited a giant capacity for information storage for ReRAM because the structure provides a high storage density. But meanwhile, the sneak-out current, stray capacitances, and error currents that exist in interconnecting lines can cause read/write performance of crossbar memristor degradation. The state of the ReRAM device changed by applying a voltage in two electrodes to control oxygen ion drift in the electric field and diffuse by thermally driven. Therefore, the research on structured memristor has recently become more and more important.
In this thesis, the multi-stacked oxide thin film preparation technology for TFT and memristor devices are discussed. To maximize optimize the solution-process and enhance electrical performance, the indium zinc oxide (IZO) has been considered a promising candidate for oxide material that can be used for the multi-stacked oxide thin films of TFTs and memristor, exhibiting decent compatibility with low-temperature process. For the IZO TFTs, it is demonstrated that the oxygen plasma post-treatment technology is possible to improve stability and stability. And the multi-stacked structure raises the effect to optimize the oxygen vacancies the exist in multi-stacked IZO films. And for the memristor, it exhibits uniformity and reproducibility of resistance switching behavior with LRS and HRS voltage sweeps and shows excellent retention performance. The analysis of current-voltage characteristics and the impact of various IZO layers, we explained the resistive switching phenomenon for aluminum (Al)/multi-stacked IZO/ titanium oxide /Al memristor device. This research also suggested that some other appropriate metal oxide thin films with good resistive switching performance can be used for preparing the structurally enhanced memristor devices.
In conclusion, through the thesis, the multi-stacked IZO structure for semiconductor devices has been positively explored. The preparation technology of multi-stacked IZO based TFT and memristor devices introduced here may be a foundation for the exciting research and applications.
Metal oxide thin film is today one of the most advanced fields for a wide range of semiconductor device applications. Amorphous metal oxide semiconductors have been widely studied as the active layers in display backplanes of thin-film transistors (TFTs) because of their attractive advantages, including reasonable electrical mobility in comparison to the silicon-based TFTs, decent optical transparency in the visible light region, excellent uniformity for large-area electronics, and compatibility conductor with low fabrication costs under low-temperature processes. The development of next-generation techniques is inseparable from the solution-process, which is completely meet to the requirement of low-cost fabrication of large-areas by low-temperature processes.
However, still exists a great many challenging issues, such as an unavoidability of high-temperature annealing step for oxidation in the solution process, an instability issue regarding the voltage-bias stress, an optimization problem of stability, and an urgent question of porosity problem of films using solution process, which impact on electrical performance. All of these preparation techniques of oxide thin films will need to restore the crystal structure, eliminate the defects, and ensure satisfactory TFTs electrical characteristics at a high-temperature (above 300 °C) whether solution process or vacuum deposition, which can become a hindrance to hinder the development of flexible thin films and next-generation display devices.
Meanwhile, memristor is defined to be the two-terminal resistive switching non-volatile memories (NVM), and a memristor model was successfully developed by Hewlett-Packard scientists in 2008 upon the original theoretical framework of the memristor, which was published by Leon Chua in 1970. The memristor has been selected as promising candidates to fulfill the high standards required for the next-generation NVM owing to its simple structure, low fabrication cost, low power consumption, fast operation, and high integration. Among the numerous contenders in next-generation NVM, resistive random-access memories (ReRAMs) have been drawn more attention for application in memory, logic and neuromorphic, moreover, it has played a crucial part in recent data processing and storage technology. The ReRAM exhibits excellent fast read and write performance, non-volatility, and low power consumption as the next-generation NVM compared with traditional random-access memory. These benefit from its simple capacitor-like structure, high-density integration, long state-retention time, high switching speed, and low energy consumption.
A two-terminal memristor device using a crossbar array architecture is formed at every cross-point has exhibited a giant capacity for information storage for ReRAM because the structure provides a high storage density. But meanwhile, the sneak-out current, stray capacitances, and error currents that exist in interconnecting lines can cause read/write performance of crossbar memristor degradation. The state of the ReRAM device changed by applying a voltage in two electrodes to control oxygen ion drift in the electric field and diffuse by thermally driven. Therefore, the research on structured memristor has recently become more and more important.
In this thesis, the multi-stacked oxide thin film preparation technology for TFT and memristor devices are discussed. To maximize optimize the solution-process and enhance electrical performance, the indium zinc oxide (IZO) has been considered a promising candidate for oxide material that can be used for the multi-stacked oxide thin films of TFTs and memristor, exhibiting decent compatibility with low-temperature process. For the IZO TFTs, it is demonstrated that the oxygen plasma post-treatment technology is possible to improve stability and stability. And the multi-stacked structure raises the effect to optimize the oxygen vacancies the exist in multi-stacked IZO films. And for the memristor, it exhibits uniformity and reproducibility of resistance switching behavior with LRS and HRS voltage sweeps and shows excellent retention performance. The analysis of current-voltage characteristics and the impact of various IZO layers, we explained the resistive switching phenomenon for aluminum (Al)/multi-stacked IZO/ titanium oxide /Al memristor device. This research also suggested that some other appropriate metal oxide thin films with good resistive switching performance can be used for preparing the structurally enhanced memristor devices.
In conclusion, through the thesis, the multi-stacked IZO structure for semiconductor devices has been positively explored. The preparation technology of multi-stacked IZO based TFT and memristor devices introduced here may be a foundation for the exciting research and applications.
주제어
#indium zinc oxide thin film transistors memristor multi-stacked structure femtosecond laser UV laser atomic layer deposition pre/post annealing technologies
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