초록

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Abstract ▼ AI-Helper

Design principles for high-brightness ligh-temitting diodes have been derived by using escape cone concepts. Based on the design principles, some important high-brightness LED structures developed thus far have been reviewed and, in addition, their external coupling efficiencies have also been estim...

Design principles for high-brightness ligh-temitting diodes have been derived by using escape cone concepts. Based on the design principles, some important high-brightness LED structures developed thus far have been reviewed and, in addition, their external coupling efficiencies have also been estimated. In AlGaAs or InGaAIP LEDs, in which photon absorption in the ohmic electrodes is known to be serious, photon shielding by the electrodes is minimized by using window layer (WL) as well as transparent substrate (TS) leading to significantly improved light-emitting efficiency. However, in InGaN LEDs emitting blue to green lights, the photon absorption in ohmic contact to wide bandgap GaN may be negligible and therefore, photon shielding by the electrodes would not lead to as significant problems as in conventional In AIGaAs or InGaAIP LEDs.