초록

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Abstract ▼ AI-Helper

We designed the optimal device parameters of the retrograde well and the gettering layer(buried layer) using the high energy ion implantation for the next generation of CMOS struoture and proposed two models and simulated these models with Athena and Atlas, Silvaco Co. We obtained trigger currents ...

We designed the optimal device parameters of the retrograde well and the gettering layer(buried layer) using the high energy ion implantation for the next generation of CMOS struoture and proposed two models and simulated these models with Athena and Atlas, Silvaco Co. We obtained trigger currents which is more than 600 ${\mu}A/{\mu}m$ when the structure has been combined the gettering layer and the retrograde well. And the second model(twin retrograde well) was obtained that holdingcurrents were over 2500${\mu}A/{\mu}m$. As results, the more heavier dose, the more improved the latch-up immunity. The n'-p' spacing was fixed a 2${\mu}m$ in both models.