초록

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Abstract ▼ AI-Helper

In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0...

In this paper, we have studies the transport mechanism and origin of SILC for the various thickness of wet oxide. Also, SILC characteristics of $N_2O$ annealed oxide was included in this study. We made the flash memory cell with $N_2O$ annealed oxide of 60Athick under $0.25{\mu}m$ design rule, and measured the characteristics of the cell. As a result, we have found that the origin of SILC is due to the trap formed inside of the oxide layer by electrical stress. And we reached the conclusion that the transport mechanism of SILC is ruled by the modified F-N tunneling if the electric field is lower than 8MV/cm or typical F-N tunneling if the electric field is higher than 8MV/cm. We could also confirm the fact that $N_2O$ annealed oxide of 60Athick have an improved resistance effect against SILC. In case that we apply $N_2O$ annealed oxide of 60Athick to the flash memory, we could confirm $10^6$ times endurance and more than 10 years drain disturb, and could get 8V programmable flash memory characteristics.